Vishay BYV26A Ultra-fast avalanche sinterglass diode Datasheet

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
MECHANICAL DATA
APPLICATIONS
Case: SOD-57
• Switched mode power supplies
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
• High-frequency inverter circuits

Polarity: color band denotes cathode end


Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYV26E
BYV26E-TR
5000 per 10" tape and reel
25 000
BYV26E
BYV26E-TAP
5000 per ammopack
25 000
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYV26A
VR = 200 V; IF(AV) = 1 A
SOD-57
BYV26B
VR = 400 V; IF(AV) = 1 A
SOD-57
BYV26C
VR = 600 V; IF(AV) = 1 A
SOD-57
BYV26D
VR = 800 V; IF(AV) = 1 A
SOD-57
BYV26E
VR = 1000 V; IF(AV) = 1 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
TEST CONDITION
See electrical characteristics
PART
SYMBOL
VALUE
UNIT
BYV26A
VR = VRRM
200
V
BYV26B
VR = VRRM
400
V
BYV26C
VR = VRRM
600
V
BYV26D
VR = VRRM
800
V
BYV26E
VR = VRRM
1000
V
IFSM
30
A
tp = 10 ms, half sine wave
Average forward current
Non repetitive reverse avalanche energy
I(BR)R = 1 A, inductive load
Junction and storage temperature range
IF(AV)
1
A
ER
10
mJ
Tj = Tstg
- 55 to + 175
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Rev. 1.8, 04-Sep-12
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 10 mm, TL = constant
RthJA
45
K/W
Document Number: 86040
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
Reverse current
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 1 A
PART
VF
-
-
2.5
V
IF = 1 A, Tj = 175 °C
VF
-
-
1.3
V
VR = VRRM
IR
-
-
5
μA
VR = VRRM, Tj = 150 °C
IR = 100 μA
Reverse breakdown voltage
IF = 0.5 A, IR = 1 A, iR = 0.25 A
Reverse recovery time
IR
-
-
100
μA
BYV26A
V(BR)R
300
-
-
V
BYV26B
V(BR)R
500
-
-
V
BYV26C
V(BR)R
700
-
-
V
BYV26D
V(BR)R
900
-
-
V
BYV26E
V(BR)R
1100
-
-
V
BYV26A
trr
-
-
30
ns
BYV26B
trr
-
-
30
ns
BYV26C
trr
-
-
30
ns
BYV26D
trr
-
-
75
ns
BYV26E
trr
-
-
75
ns
600
1.2
VR = VRRM
RthJA = 45 K/W
500
RthJA = 100 K/W
200 V
400
400 V
300
600 V
200
800 V
100
1000 V
IFAV - Average Forward Current (A)
PR - Max. Reverse Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
0
1.0
RthJA = 45 K/W
0.8
0.6
0.4
RthJA = 100 K/W
0.2
0
0
40
80
120
160
200
0
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
80
120
160
200
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
10
VR = VRRM
Tj = 175 °C
IF - Forward Current (A)
IR - Reverse Current (μA)
40
Tamb - Ambient Temperature (°C)
959730
Tj - Junction Temperature (°C)
959728
100
10
1
0.1
1
Tj = 25 °C
0.1
0.01
0.001
0
959729
40
80
120
160
200
Tj - Junction Temperature (°C)
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 04-Sep-12
0
959731
1
2
3
4
5
6
7
VF - Forward Voltage (V)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Document Number: 86040
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
40
40
f = 1 MHz
CD - Diode Capacitance (pF)
CD - DiodeCapacitance (pF)
f = 1 MHz
35
30
BYV26C
25
20
15
10
5
35
30
BYV26E
25
20
15
10
0
5
0
0.1
1
16380
10
100
0.1
VR - Reverse Voltage (V)
16381
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 04-Sep-12
Document Number: 86040
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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