AP10TN008CMT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
D
▼ Ultra Low On-resistance
100V
7.9mΩ
75A
G
▼ RoHS Compliant & Halogen-Free
D
S
Description
D
D
D
AP10TN008C series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
S
S
S
G
®
PMPAK 5x6
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
.
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current (Chip), VGS @ 10V
75
A
18.4
A
14.7
A
200
A
83.3
W
5
W
216
mJ
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
1.5
℃/W
25
℃/W
1
201603281
AP10TN008CMT
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=13A
-
-
7.9
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=13A
-
30
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=13A
-
72
115
nC
Qgs
Gate-Source Charge
VDS=50V
-
16
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
23
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
18
-
ns
tr
Rise Time
ID=13A
-
42
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
57
-
ns
tf
Fall Time
VGS=10V
-
57
-
ns
Ciss
Input Capacitance
VGS=0V
-
3600 5760
pF
Coss
Output Capacitance
VDS=50V
-
590
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Rg
Gate Resistance
-
1.1
2.2
Ω
Min.
Typ.
IS=13A, VGS=0V
-
-
1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=13A, VGS=0V,
-
65
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
125
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec; 60 C/W at steady state.
4.Starting Tj=25oC , VDD=50V , L=3mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10TN008CMT
200
300
o
10V
T C =25 C
8.0V
10V
8.0V
160
ID , Drain Current (A)
ID , Drain Current (A)
250
T C = 150 o C
200
7.0V
150
6.0V
100
7.0V
120
6.0V
80
V G = 5.0V
V G = 5.0V
40
50
0
0
0
4
8
12
16
0
4
V DS , Drain-to-Source Voltage (V)
8
12
16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
12
I D =13A
V G =10V
I D = 13 A
o
T C =25 C
2.0
8
.
Normalized RDS(ON)
RDS(ON) (mΩ)
10
1.6
1.2
6
0.8
4
0.4
4
5
6
7
8
9
10
-100
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2.0
I D =250uA
1.6
Normalized VGS(th)
IS(A)
16
12
T j =150 o C
T j =25 o C
8
1.2
0.8
0.4
4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10TN008CMT
12
I D = 20 A
V DS =50V
10
4000
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
5000
6
3000
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
100
1
21
41
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
81
101
121
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100
10us
.
10
100us
1
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
0.1
0.1
1
10
100
Normalized Thermal Response (Rthjc)
1000
ID (A)
61
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
100
V DS =5V
T j =25 o C
ID , Drain Current (A)
ID , Drain Current (A)
80
60
40
120
T j =150 o C
80
40
20
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP10TN008CMT
2
100
I D =1mA
80
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
60
40
20
0.4
0
0
-100
-50
T
0
j
50
100
0
150
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
18
T j =25 o C
RDS(ON) (mΩ)
14
10
.
V GS =10V
6
2
0
10
20
30
40
50
60
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP10TN008CMT
MARKING INFORMATION
Part Number
10TN008C
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6