Diodes GBJ808 8.0a glass passivated bridge rectifier Datasheet

GBJ8005 - GBJ810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 170A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ
A
K
_
Mechanical Data
·
·
·
·
·
·
·
J
30.30
B
19.70
20.30
L
C
17.00
18.00
M
D
3.80
4.20
P
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
3.0 X 45°
K
R
I
E
Max
29.70
N
C
G
Min
A
S
D
H
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx.)
Marking: Type Number
B
Dim
E
L
4.40
M
3.40
4.80
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
@ TC = 110°C
Non-Repetitive Peak Forward Surge Current, 8.3ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
Peak Reverse Current
at Rated DC Blocking Voltage
@ IF = 4.0A
@ TC = 25°C
@ TC = 125°C
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
GBJ
8005
GBJ
801
GBJ
802
GBJ
804
GBJ
806
GBJ
808
GBJ
810
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
8.0
A
IFSM
170
A
VFM
1.0
V
IR
5.0
500
mA
I 2t
120
A 2s
Cj
55
pF
RqJC
1.6
°C/W
Tj, TSTG
-65 to +150
°C
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
DS21217 Rev. D-2
1 of 2
GBJ8005-GBJ810
8
With heatsink
6
4
Without heatsink
2
Resistive or
Inductive load
0
25
50
10
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
10
75
100
125
1.0
0.1
Tj = 25°C
Pulse width = 300µs
0.01
150
0
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FWD SURGE CURRENT (A)
100
Single half-sine-wave
(JEDEC method)
160
Tj = 150°C
120
80
40
0
0.8
1.2
1.6
1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
0.4
Tj = 25°C
f = 1MHz
10
1
1
1
100
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
1000
100
Tj = 125°C
Tj = 100°C
10
Tj = 50°C
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21217 Rev. D-2
2 of 2
GBJ8005-GBJ810
Similar pages