BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com HIGH VOLTAGE SWITCHING DIODE Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 • S and NSV Prefixes for Automotive and Other Applications 3 CATHODE Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable SC−88A 5 1 CATHODE ANODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19, NSVBAS19 BAS20, SBAS20 BAS21, SBAS21 VR Repetitive Peak Reverse Voltage BAS19, NSVBAS19 BAS20, SBAS20 BAS21, SBAS21 VRRM Value Unit 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc TJ, Tstg −55 to +150 °C PD 385 mW ESD HM < 500 V MM < 400 V Electrostatic Discharge 3 3 Jx M G G 1 IF Power Dissipation (Note 1) 3 ANODE MARKING DIAGRAMS Vdc 120 200 250 Continuous Forward Current Junction and Storage Temperature Range 4 CATHODE Vdc 120 200 250 1 ANODE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. 2 SOT−23 (TO−236) CASE 318 STYLE 8 2 1 5 Jx M G G 3 1 SC−88A (SOT−353) CASE 419A x P R S M G 4 1 2 3 = P, R, or S = BAS19L, NSVBAS19L = BAS20L, SBAS20L = BAS21L, SBAS21L or BAS21DW5, SBAS21DW5 = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 15 1 Publication Order Number: BAS19LT1/D BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 THERMAL CHARACTERISTICS (SOT−23) Characteristic Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient (SOT−23) Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 °C/W −55 to +150 °C Symbol Max Unit PD 385 mW 328 3.0 °C/W mW/°C TJmax 150 °C TJ, Tstg −55 to +150 °C RJA Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C PD Thermal Resistance Junction−to−Ambient RJA Junction and Storage Temperature Range TJ, Tstg THERMAL CHARACTERISTICS (SC−88A) Characteristic Power Dissipation (Note 4) Thermal Resistance − Junction−to−Ambient Derate Above 25°C RJA Maximum Junction Temperature Operating Junction and Storage Temperature Range 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 150 Vdc) (VR = 200 Vdc) (VR = 100 Vdc, TJ = 150°C) (VR = 150 Vdc, TJ = 150°C) (VR = 200 Vdc, TJ = 150°C) BAS19, NSVBAS19 BAS20, SBAS20 BAS21, SBAS21 BAS19 BAS20, SBAS20 BAS21, SBAS21 Reverse Breakdown Voltage (IBR = 100 Adc) (IBR = 100 Adc) (IBR = 100 Adc) BAS19, NSVBAS19 BAS20, SBAS20 BAS21, SBAS21 IR V(BR) Min Max − − − − − − 0.1 0.1 0.1 100 100 100 120 200 250 − − − − − 1.0 1.25 Unit Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns http://onsemi.com 2 Vdc BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR IR(REC) = 3.0 mA IR VR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 150°C 100 IR , REVERSE CURRENT (μA) 125°C 85°C 10 55°C 25°C 1.0 -55°C 125°C 1.0 85°C 0.1 55°C 0.01 25°C -40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.9 0.001 20 1.0 50 80 200 170 110 140 VR, REVERSE VOLTAGE (V) Figure 2. VF vs. IF Figure 3. IR vs. VR 1.6 Cap CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 150°C 1.4 1.2 1.0 0.8 0.6 0.4 0 1 2 3 4 5 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance http://onsemi.com 3 6 7 8 230 260 BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 ORDERING INFORMATION Package Shipping† BAS19LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAS19LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel NSVBAS19LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BAS20LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAS20LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel SBAS20LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BAS21LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SBAS21LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BAS21LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel SBAS21LT3G* SOT−23 (Pb−Free) 10000 / Tape & Reel BAS21DW5T1G SC−88A (Pb−Free) 3000 / Tape & Reel SBAS21DW5T1G* SC−88A (Pb−Free) 3000 / Tape & Reel SBAS21DW5T3G* SC−88A (Pb−Free) 10000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 4 BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE K A G 5 4 −B− S 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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