ON NRVBS3200T3G Surface mount schottky power rectifier Datasheet

MBRS3200T3G,
NRVBS3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very High Blocking Voltage − 200 V
175°C Operating Junction Temperature
Guard−Ring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements: AEC−Q101
Qualified and PPAP Capable
All Packages are Pb−Free*
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B320G
G
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings:
♦ Machine Model = A
♦ Human Body Model = 1C
B320
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBRS3200T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS3200T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 6
1
Publication Order Number:
MBRS3200T3/D
MBRS3200T3G, NRVBS3200T3G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
200
V
Average Rectified Forward Current (TL = 150 °C)
IF(AV)
3.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Operating Junction Temperature
TJ
A
100
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RqJL
RqJA
13
62
°C/W
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 3.0 A, TJ = 25°C)
(IF = 4.0 A, TJ = 25°C)
(IF = 3.0 A, TJ = 150°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
IR
V
0.84
0.86
0.59
1.0
5.0
mA
mA
1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TA = 150°C
10
TA = 175°C
TA = 25°C
1
0.1
100
TA = 100°C
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
TA = 100°C
TA = 175°C
10
TA = 25°C
1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
TA = 150°C
0.2 0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VF, FORWARD VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRS3200T3G, NRVBS3200T3G
1.0E−02
1.0E−02
TA = 175°C
TA = 150°C
TA = 100°C
1.0E−06
1.0E−07
1.0E−09
0
TA = 100°C
1.0E−05
1.0E−06
1.0E−08
TA = 150°C
1.0E−04
1.0E−04
1.0E−05
TA = 175°C
1.0E−03
IR, REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
1.0E−03
TA = 25°C
1.0E−07
TA = 25°C
20
40
1.0E−08
60
80
100
120 140 160 180 200
1.0E−09
0
20
40
60
Figure 3. Typical Reverse Current
120 140 160 180 200
IF, AVERAGE FORWARD CURRENT (A)
7
TC = 25°C
f = 1 MHz
Typical Capacitance
at 0 V = 209 V
100
0
20
40
60
80
120 140 160 180 200
100
RqJL = 13°C/W
6
dc
5
SQUARE WAVE
4
3
2
1
0
80
90
100 110 120 130 140 150 160 170 180
VR, REVERSE VOLTAGE (V)
TL, LEAD TEMPERATURE (°C)
Figure 5. Typical Capacitance
Figure 6. Current Derating − Lead
Pfo, AVERAGE POWER DISSIPATION (W)
C, CAPACITANCE (pF)
100
Figure 4. Maximum Reverse Current
1000
10
80
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
5
4.5
4
SQUARE WAVE
3.5
dc
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
IO, AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
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3
6
MBRS3200T3G, NRVBS3200T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS3200T3/D
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