® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Revised Package Outline Dimension(TSOP-II) Revised VTERM to VT1 and VT2 Revised Test Condition of ICC/ISB1/IDR Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Revised ORDERING INFORMATION in page 9 Added E/I grade Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Apr.28.2006 Apr.12.2007 Apr.17.2009 Aug.25.2010 ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 FEATURES GENERAL DESCRIPTION Fast access time : 10/12/15ns Low power consumption: Operating current: 200/180/150mA (TYP.) Standby current: 1mA (TYP.) Single 5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II The LY615128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY615128 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY615128 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY615128 LY615128(E) LY615128(I) Operating Temperature 0 ~ 70℃ -20 ~ 80℃ -45 ~ 85℃ Vcc Range Speed 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 10/12/15 ns 10/12/15 ns 10/12/15 ns FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A18 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# WE# OE# CONTROL CIRCUIT Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 1mA 200/180/150mA 1mA 200/180/150mA 1mA 200/180/150mA 512Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 PIN CONFIGURATION 1 44 NC NC 2 43 NC A4 3 42 NC A3 4 41 A5 A2 5 40 A6 A1 6 39 A7 A0 7 38 A8 37 OE# 36 DQ7 35 DQ6 34 Vss 33 Vcc 32 DQ5 31 DQ4 CE# 8 DQ0 9 DQ1 10 Vcc 11 Vss 12 DQ2 13 LY615128 NC DQ3 14 WE# 15 30 A9 A18 16 29 A10 A17 17 28 A11 A16 18 27 A12 A15 19 26 A13 A14 20 25 NC NC 21 24 NC NC 22 23 NC TSOP-II ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS Operating Temperature Storage Temperature Power Dissipation DC Output Current SYMBOL VT1 VT2 TA TSTG PD IOUT RATING -0.5 to 4.6 -0.5 to VCC+0.5 0 to 70(C grade) -20 tp 80(E grade) -45 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# H L L L OE# X H L X WE# X H H L SUPPLY CURRENT ISB,ISB1 ICC ICC ICC I/O OPERATION High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -4mA Output Low Voltage VOL IOL = 8mA -10 Cycle time = Min. Average Operating ICC CE# = VIL , II/O = 0mA -12 Power supply Current Others at VIL or VIH -15 CE# = VIH, others at VIL or VIH ISB Standby Power CE# ≧VCC - 0.2V Supply Current ISB1 Others at 0.2V or VCC - 0.2V MIN. 4.5 2.2 - 0.3 -1 TYP. 5.0 - *4 MAX. 5.5 VCC+0.3 0.6 1 UNIT V V V µA -1 - 1 µA 2.4 - 220 200 180 5 0.4 280 250 220 50 V V mA mA mA mA - 1 10* 5 mA Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ 5. 1mA for special request CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - Note : These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 MAX 8 10 UNIT pF pF ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* LY615128-10 MIN. MAX. 10 10 10 5 2 0 5 5 3 - LY615128-12 MIN. MAX. 12 12 12 6 3 0 6 6 3 - LY615128-15 MIN. MAX. 15 15 15 7 4 0 7 7 3 - UNIT LY615128-10 MIN. MAX. 10 8 8 0 8 0 6 0 2 6 LY615128-12 MIN. MAX. 12 10 10 0 9 0 7 0 3 7 LY615128-15 MIN. MAX. 15 12 12 0 10 0 8 0 4 8 UNIT *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z Data Valid Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low. 3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 High-Z ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW (4) tDH Data Valid Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tWP WE# tWHZ Dout High-Z (4) tDW tDH Data Valid Din Notes : 1.WE#, CE# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time SYMBOL TEST CONDITION VDR CE# ≧ VCC - 0.2V VCC = 2.0V CE# ≧ VCC - 0.2V IDR Others at 0.2V or VCC - 0.2V See Data Retention tCDR Waveforms (below) tR MIN. 2.0 TYP. - MAX. 5.5 UNIT V - 0.5 1 mA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM VDR ≧ 2.0V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY615128 5V 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 PACKAGE OUTLINE DIMENSION θ 44-pin 400mil TSOP-Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 3 6 0 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® LY615128 Rev. 1.3 5V 512K X 8 BIT HIGH SPEED CMOS SRAM ORDERING INFORMATION LY615128 U V - WW Y Z Z : Packing Type Blank : Tube or Tray Tray : 44-pin 400 mil TSOP-II T : Tape Reel Y : Temperature Range Blank : (Commercial) 0°C ~ 70°C E : (Extended) -20°C ~ +80°C I : (Industrial) -40°C ~ +85°C WW : Access Time(Speed) V : Lead Information U : Package Type L : Green Package M : 44-pin 400 mil TSOP-II Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY615128 Rev. 1.3 5V 512K X 8 BIT HIGH SPEED CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10