INC2001AX SERIES FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE FEATURE OUTLINE DRAWING INC2001AT2 (PRELIMINARY) 0.3 0.425 ③ 0.15 0.65 ② 1.25 0～0.1 0.7 0.9 ③ ① 0.65 1.2 0.8 2.0 1.3 ② 0.2 0.25 0.4 ① 0.425 0.5 MARKING 0.8 0.2 APPLICATION muting circuit , switching circuit INC2001AM1 2.1 0.4 ・Small package for easy mounting. ・High reverse hFE ・Small collector to emitter saturation voltage. VCE(sat)=40mV(TYP.)（@IC=50mA/IB=2.5mA） ・Low on Resistance Ron=0.65Ω(TYP.)（@IB=5mA） Unit：mm R W・ JEITA, JEDEC：－ ISAHAYA：T-USM JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR INC2001AU1 INC2001AC1 1.6 JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR ISAHAYA ELECTRONICS CORPORATION 0.4 0.95 ③ 0.16 1.1 ② 0.5 0～0.1 0～0.1 0.55 0.15 ③ ① 1.5 0.8 1.6 1.0 0.7 0.5 0.95 0.4 2.9 1.90 ② 0.8 0.3 0.5 ① 0.5 0.4 2.5 JEITA：SC-59 JEDEC：Similar to TO-236 TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR INC2001AX SERIES . FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL PARAMETER ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature ＰＣ Ｔｊ Ｔｓｔｇ RATING INC2001AU1 INC2001AM1 40 40 20 600 INC2001AT2 125（※） 150 PARAMETER Ｖ（ＢＲ）ＣBＯ Ｖ（ＢＲ）EBＯ Ｖ（ＢＲ）CEＯ Ｉ ＣＢＯ Ｉ EＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） ｆＴ C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product Collector output capacitance Output “ON” resistance Cob RON V V V mA 200 +125 -55～+125 mW +150 -55～+150 ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） SYMBOL UNIT INC2001AC1 ℃ ℃ ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. TEST CONDITION MIN 40 40 20 I C=50μA，IE=0mA I E=50μA，IC=0mA I C=1mA，RBE=∞ VCB=40V，I E =0mA VEB=40V，I C =0mA VCE=5V，I C =10mA I C =50mA，I B =2.5mA VCE=10V，I E =-10mA，f=100MHz VCB=10V，I E =0A，f=1MHz IB=5mA，RL=1kΩ LIMIT TYP 820 40 50 5.0 0.65 MAX 0.5 0.5 2500 150 UNIT V V V μA μA － mV MHz pF Ω TYPICAL CHARACTERISTICS COMMON EMITTER OUTPUT COMMON EMITTER TRANSFER 50 100 Ta=25℃ Ta=25℃ VCE=5V 90uA 80 40 80uA COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 100uA 70uA 60uA 60 50uA 40uA 30uA 40 20uA 10uA 20 30 20 10 0 0 1 2 3 4 COLLECTOR TO EMITTER VOLTAGE VCE (V) 5 0 0 0.2 0.4 0.6 BASE TO EMITTER VOLTAGE VBE (V) ISAHAYA ELECTRONICS CORPORATION 0.8 1 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT DC REVERSE CURRENT GAIN VS. COLLERCTOR CURRENT 10000 DC REVERSE CURRENT GAIN hFER DC FORWARD CURRENT GAIN hFE 10000 1000 100 Ta=25℃ VCE=5V 10 1000 100 Ta=25℃ VEC=5V 10 1 0.1 1 10 100 1 1000 0.1 1 COLLECTOR CURRENT IC (mA) 100 1000 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) 100 GAIN BAND WIDTH PRODUCT fT(MHz) 10 COLLECTOR IC (mA) 80 60 40 Ta=25℃ VCE=10V 20 10 1 Ta=25℃ 0 -1 -10 EMITTER CURRENT 0.1 -100 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT ON RESISTANCE VS. BASE CURRENT 100 Ta=25℃ IC/IB=20 100 ON RESISTANCERon (Ω) COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1000 10 10 1 1 Ta=25℃ 0.1 0.1 1 10 100 COLLECTOR CURRENT IC (mA) 1000 0.1 0.01 0.1 1 BASE CURRENT IB (mA) ISAHAYA ELECTRONICS CORPORATION 10 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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