Isahaya INC2001AC1 Silicon npn epitaxial type Datasheet

INC2001AX SERIES
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
OUTLINE DRAWING
INC2001AT2 (PRELIMINARY)
0.3
0.425
③
0.15
0.65
②
1.25
0~0.1
0.7
0.9
③
①
0.65
1.2
0.8
2.0
1.3
②
0.2
0.25
0.4
①
0.425
0.5
MARKING
0.8
0.2
APPLICATION
muting circuit , switching circuit
INC2001AM1
2.1
0.4
・Small package for easy mounting.
・High reverse hFE
・Small collector to emitter saturation voltage.
VCE(sat)=40mV(TYP.)(@IC=50mA/IB=2.5mA)
・Low on Resistance
Ron=0.65Ω(TYP.)(@IB=5mA)
Unit:mm
R W・
JEITA, JEDEC:-
ISAHAYA:T-USM
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
INC2001AU1
INC2001AC1
1.6
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
0.4
0.95
③
0.16
1.1
②
0.5
0~0.1
0~0.1
0.55
0.15
③
①
1.5
0.8
1.6
1.0
0.7
0.5
0.95
0.4
2.9
1.90
②
0.8
0.3
0.5
①
0.5
0.4
2.5
JEITA:SC-59
JEDEC:Similar to TO-236
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
INC2001AX SERIES
.
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
I C
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
PC
Tj
Tstg
RATING
INC2001AU1
INC2001AM1
40
40
20
600
INC2001AT2
125(※)
150
PARAMETER
V(BR)CBO
V(BR)EBO
V(BR)CEO
I CBO
I EBO
hFE
VCE(sat)
fT
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
Output “ON” resistance
Cob
RON
V
V
V
mA
200
+125
-55~+125
mW
+150
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
UNIT
INC2001AC1
℃
℃
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
MIN
40
40
20
I C=50μA,IE=0mA
I E=50μA,IC=0mA
I C=1mA,RBE=∞
VCB=40V,I E =0mA
VEB=40V,I C =0mA
VCE=5V,I C =10mA
I C =50mA,I B =2.5mA
VCE=10V,I E =-10mA,f=100MHz
VCB=10V,I E =0A,f=1MHz
IB=5mA,RL=1kΩ
LIMIT
TYP
820
40
50
5.0
0.65
MAX
0.5
0.5
2500
150
UNIT
V
V
V
μA
μA
-
mV
MHz
pF
Ω
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
COMMON EMITTER TRANSFER
50
100
Ta=25℃
Ta=25℃
VCE=5V
90uA
80
40
80uA
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
100uA
70uA
60uA
60
50uA
40uA
30uA
40
20uA
10uA
20
30
20
10
0
0
1
2
3
4
COLLECTOR TO EMITTER VOLTAGE VCE (V)
5
0
0
0.2
0.4
0.6
BASE TO EMITTER VOLTAGE VBE (V)
ISAHAYA ELECTRONICS CORPORATION
0.8
1
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
DC REVERSE CURRENT GAIN VS. COLLERCTOR CURRENT
10000
DC REVERSE CURRENT GAIN hFER
DC FORWARD CURRENT GAIN hFE
10000
1000
100
Ta=25℃
VCE=5V
10
1000
100
Ta=25℃
VEC=5V
10
1
0.1
1
10
100
1
1000
0.1
1
COLLECTOR CURRENT IC (mA)
100
1000
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
100
GAIN BAND WIDTH PRODUCT fT(MHz)
10
COLLECTOR IC (mA)
80
60
40
Ta=25℃
VCE=10V
20
10
1
Ta=25℃
0
-1
-10
EMITTER CURRENT
0.1
-100
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE VCB(V)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
ON RESISTANCE VS. BASE CURRENT
100
Ta=25℃
IC/IB=20
100
ON RESISTANCERon (Ω)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VCE(sat) (mV)
1000
10
10
1
1
Ta=25℃
0.1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1000
0.1
0.01
0.1
1
BASE CURRENT IB (mA)
ISAHAYA ELECTRONICS CORPORATION
10
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2008
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