MOTOROLA MJL21193 16 ampere complementary silicon power transistors 250 volts 200 watt Datasheet

 Order this document
by MJL21193/D
SEMICONDUCTOR TECHNICAL DATA
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
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•
•
•
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS
Total Harmonic Distortion Characterized
High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
CASE 340G–02
TO–3PBL
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
250
Vdc
Collector–Base Voltage
VCBO
400
Vdc
Emitter–Base Voltage
VEBO
5
Vdc
Collector–Emitter Voltage – 1.5 V
VCEX
400
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
16
30
Adc
Base Current – Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
Watts
W/°C
TJ, Tstg
– 65 to +150
°C
Symbol
Max
Unit
RθJC
0.7
°C/W
Operating and Storage Junction Temperature Range
āā
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
VCEO(sus)
250
—
—
Vdc
ICEO
—
—
100
µAdc
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5.0 µs, Duty Cycle ≤ 10%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
—
—
100
µAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
—
—
100
µAdc
4.0
2.25
—
—
—
—
25
8
—
—
75
—
—
—
2.2
—
—
—
—
1.4
4
OFF CHARACTERISTICS
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2%
%
—
0.8
—
—
0.08
—
fT
4
—
—
MHz
Cob
—
—
500
pF
2
NPN MJL21194
6.5
6.0
VCE = 10 V
5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
10
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
PNP MJL21193
8.0
7.0
10 V
6.0
5.0
VCE = 5 V
4.0
3.0
2.0
1.0
0
0.1
TJ = 25°C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
Motorola Bipolar Power Transistor Device Data
10
TYPICAL CHARACTERISTICS
PNP MJL21193
NPN MJL21194
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
TJ = 100°C
25°C
100
– 25°C
TJ = 100°C
25°C
100
– 25°C
VCE = 20 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
Figure 4. DC Current Gain, VCE = 20 V
PNP MJL21193
NPN MJL21194
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
100
Figure 3. DC Current Gain, VCE = 20 V
1000
TJ = 100°C
25°C
100
– 25°C
TJ = 100°C
25°C
100
– 25°C
VCE = 5 V
10
0.1
VCE = 20 V
1.0
10
IC COLLECTOR CURRENT (AMPS)
10
0.1
100
1.0
10
IC COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJL21193
NPN MJL21194
30
35
25
20
IB = 2 A
I C, COLLECTOR CURRENT (A)
1.5 A
I C, COLLECTOR CURRENT (A)
1.0
10
IC COLLECTOR CURRENT (AMPS)
1A
15
0.5 A
10
5.0
IB = 2 A
30
1.5 A
25
1A
20
0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
Motorola Bipolar Power Transistor Device Data
25
0
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
25
Figure 8. Typical Output Characteristics
3
TYPICAL CHARACTERISTICS
PNP MJL21193
NPN MJL21194
2.5
1.4
TJ = 25°C
IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
2.0
1.5
1.0
VBE(sat)
0.5
1.2
TJ = 25°C
IC/IB = 10
1.0
VBE(sat)
0.8
0.6
0.4
0.2
VCE(sat)
VCE(sat)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21193
NPN MJL21194
10
TJ = 25°C
1.0
0
0.1
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
0
0.1
VCE = 20 V (SOLID)
0.1
0.1
VCE = 5 V (DASHED)
1.0
10
100
100
10
TJ = 25°C
VCE = 20 V (SOLID)
1.0
0.1
0.1
VCE = 5 V (DASHED)
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base–Emitter Voltage
Figure 12. Typical Base–Emitter Voltage
100
IC, COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
1 SEC
10
1.0
0.1
1.0
TC = 25°C
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
10000
10000
TC = 25°C
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
TC = 25°C
1000
Cob
1000
Cob
f(test) = 1 MHz)
100
0.1
Cib
f(test) = 1 MHz)
1.0
10
100
0.1
100
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJL21193 Typical Capacitance
Figure 15. MJL21194 Typical Capacitance
1.2
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 Ω
DUT
0.5 Ω
0.5 Ω
8.0 Ω
DUT
–50 V
Figure 17. Total Harmonic Distortion Test Circuit
Motorola Bipolar Power Transistor Device Data
5
PACKAGE DIMENSIONS
0.25 (0.010)
M
T B
M
–Q–
–B–
–T–
C
E
U
N
A
1
R
2
L
3
–Y–
P
K
W
F 2 PL
G
J
H
D 3 PL
0.25 (0.010)
M
Y Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MILLIMETERS
MIN
MAX
2.8
2.9
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.0
11.4
3.95
4.75
2.2
2.6
3.1
3.5
2.15
2.35
6.1
6.5
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.433
0.449
0.156
0.187
0.087
0.102
0.122
0.137
0.085
0.093
0.240
0.256
0.110
0.125
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
S
CASE 340G–02
TO–3PBL
ISSUE E
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJL21193/D*
MJL21193/D
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