Order this document by MJL21193/D SEMICONDUCTOR TECHNICAL DATA The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • • • *Motorola Preferred Device 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS Total Harmonic Distortion Characterized High DC Current Gain – hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second CASE 340G–02 TO–3PBL MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc Collector Current — Continuous Collector Current — Peak (1) IC 16 30 Adc Base Current – Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.7 °C/W Operating and Storage Junction Temperature Range āā THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 — — Vdc ICEO — — 100 µAdc OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5.0 µs, Duty Cycle ≤ 10%. (continued) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO — — 100 µAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX — — 100 µAdc 4.0 2.25 — — — — 25 8 — — 75 — — — 2.2 — — — — 1.4 4 OFF CHARACTERISTICS SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 80 Vdc, t = 1 s (non–repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2% % — 0.8 — — 0.08 — fT 4 — — MHz Cob — — 500 pF 2 NPN MJL21194 6.5 6.0 VCE = 10 V 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJL21193 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product Motorola Bipolar Power Transistor Device Data 10 TYPICAL CHARACTERISTICS PNP MJL21193 NPN MJL21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 – 25°C TJ = 100°C 25°C 100 – 25°C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJL21193 NPN MJL21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 Figure 3. DC Current Gain, VCE = 20 V 1000 TJ = 100°C 25°C 100 – 25°C TJ = 100°C 25°C 100 – 25°C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJL21193 NPN MJL21194 30 35 25 20 IB = 2 A I C, COLLECTOR CURRENT (A) 1.5 A I C, COLLECTOR CURRENT (A) 1.0 10 IC COLLECTOR CURRENT (AMPS) 1A 15 0.5 A 10 5.0 IB = 2 A 30 1.5 A 25 1A 20 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 25 0 5.0 10 15 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 25 Figure 8. Typical Output Characteristics 3 TYPICAL CHARACTERISTICS PNP MJL21193 NPN MJL21194 2.5 1.4 TJ = 25°C IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 2.0 1.5 1.0 VBE(sat) 0.5 1.2 TJ = 25°C IC/IB = 10 1.0 VBE(sat) 0.8 0.6 0.4 0.2 VCE(sat) VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJL21193 NPN MJL21194 10 TJ = 25°C 1.0 0 0.1 VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) VBE(on) , BASE–EMITTER VOLTAGE (VOLTS) 0 0.1 VCE = 20 V (SOLID) 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 100 100 10 TJ = 25°C VCE = 20 V (SOLID) 1.0 0.1 0.1 VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base–Emitter Voltage Figure 12. Typical Base–Emitter Voltage 100 IC, COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1 SEC 10 1.0 0.1 1.0 TC = 25°C 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data 10000 10000 TC = 25°C Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) TC = 25°C 1000 Cob 1000 Cob f(test) = 1 MHz) 100 0.1 Cib f(test) = 1 MHz) 1.0 10 100 0.1 100 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL21193 Typical Capacitance Figure 15. MJL21194 Typical Capacitance 1.2 T , TOTAL HARMONIC HD DISTORTION (%) 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 Ω DUT 0.5 Ω 0.5 Ω 8.0 Ω DUT –50 V Figure 17. Total Harmonic Distortion Test Circuit Motorola Bipolar Power Transistor Device Data 5 PACKAGE DIMENSIONS 0.25 (0.010) M T B M –Q– –B– –T– C E U N A 1 R 2 L 3 –Y– P K W F 2 PL G J H D 3 PL 0.25 (0.010) M Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER S CASE 340G–02 TO–3PBL ISSUE E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *MJL21193/D* MJL21193/D