APTGT100A170TG Phase leg Trench + Field Stop IGBT® Power Module VCES = 1700V IC = 100A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control NTC2 Q1 G1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring E1 OUT Q2 G2 E2 G2 E2 VBUS 0/VBUS NTC1 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant OUT OUT E1 E2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 150 100 200 ±20 560 Tj = 125°C 200A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT100A170TG – Rev 1 VBUS APTGT100A170TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 100A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 100A R G = 4.7 Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 100A R G = 4.7 Ω VGE = 15V Tj = 125°C VBus = 900V IC = 100A Tj = 125°C R G = 4.7 Ω Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy 2.0 2.4 5.8 Typ 9 0.36 0.3 370 40 Max Unit 250 2.4 µA 6.5 400 V nA Max Unit ns 180 400 50 800 ns 300 32 mJ 31 Typ Max 1700 Tj = 25°C Tj = 125°C IF = 100A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 100 1.8 1.9 385 Tj = 125°C Tj = 25°C 490 25 Tj = 125°C Tj = 25°C Tj = 125°C 42 11 21 di/dt =1000A/µs www.microsemi.com Unit V VR=1700V IF = 100A VR = 900V V nF 650 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Typ 250 500 µA A 2.2 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT100A170TG – Rev 1 Electrical Characteristics APTGT100A170TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.22 0.39 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 3500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g July, 2006 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT100A170TG – Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : APTGT100A170TG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 200 200 175 TJ = 125°C TJ=25°C 160 125 IC (A) IC (A) 150 T J=125°C 100 120 VGE =13V VGE=15V 80 75 50 VGE=9V 40 25 0 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 200 100 175 VCE = 900V VGE = 15V RG = 4.7Ω TJ = 125°C TJ=25°C 80 150 125 T J=125°C E (mJ) IC (A) VGE =20V 100 75 TJ=125°C 50 60 Eon Eoff 40 20 Er 25 0 0 5 6 7 8 9 10 11 12 0 13 25 50 Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 250 VCE = 900V VGE =15V IC = 100A TJ = 125°C 62.5 Eon 200 50 Eoff 37.5 150 100 25 VGE=15V T J=125°C RG=4.7Ω 50 12.5 Er 0 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 0.15 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 0.2 0 40 IGBT 0.9 0.7 July, 2006 0 0.5 0.1 0.05 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT100A170TG – Rev 1 E (mJ) 75 IC (A) 87.5 Thermal Impedance (°C/W) 75 100 125 150 175 200 IC (A) V GE (V) APTGT100A170TG Forward Characteristic of diode 200 VCE =900V D=50% RG=4.7 Ω T J=125°C T C=75°C 20 ZVS 15 ZCS 175 T J=25°C 150 125 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 10 100 T J=125°C 75 T J=125°C 50 5 hard switching 25 0 0 0 20 40 60 80 IC (A) 100 120 0 140 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.3 0.9 Diode 0.7 0.25 0.2 0.15 0.5 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 July, 2006 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT100A170TG – Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein