Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ General Description Features The MDD1951 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. VDS = 60V ID = 17.9A @VGS = 10V RDS(ON) < 45.0mΩ @ VGS = 10V < 55.0mΩ @ VGS = 4.5V Applications Inverters General purpose applications D G S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage o Continuous Drain Current (Note 2) TC=25 C o TA=25 C Rating Unit VDSS 60 V VGSS ±20 V 17.9 A 4.4 A 80 A (a) (b) Pulsed Drain Current ID IDM o Power Dissipation for Single Operation TC=25 C o TA=25 C Single Pulse Avalanche Energy (Note 3) Junction and Storage Temperature Range 32.8 PD W 2.0 EAS 50 TJ, Tstg -55~+150 Symbol Rating RθJA 60 RθJC 3.8 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State) (Note 1) Thermal Resistance, Junction-to-Case December 2009. Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDD1951– Single N-Channel Trench MOSFET 60V MDD1951 Part Number Temp. Range MDD1951RH o -55~150 C Package Packing RoHS Status TO-252 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 60 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 2.0 3.0 V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - 0.1 VGS = 10V, ID = 17A - 36 45 VGS = 4.5V, ID = 12A - 44 55 VDS = 5V, ID = 17A - 26 - - 4.8 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS μA mΩ S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs - 1.6 - Gate-Drain Charge Qgd VDS = 30V, ID = 17A, VGS = 4.5V - 2.2 - Input Capacitance Ciss - 470 - Reverse Transfer Capacitance Crss - 32 - VDS = 30V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 70 - Turn-On Delay Time td(on) - 7.4 - Turn-On Rise Time tr - 15.2 - Turn-Off Delay Time td(off) - 21.2 - - 7.6 - - 0.8 1.2 V - 29 - ns - 32 - nC Turn-Off Fall Time VGS = 10V ,VDS = 30V, ID = 17A , RGEN = 5Ω tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 5A, VGS = 0V IF = 17A, di/dt = 100A/μs Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. PD is based on TJ(MAX)=150°C a. PD (TC=25°C) is based on RθJC, b. PD (TA=25°C) is based on RθJA, t<10sec 3. Starting TJ=25°C, L=1mH, VGS=10V,ID=7A, VDD=30V, Rated VDS=60V, December 2009. Version 1.1 2 MagnaChip Semiconductor Ltd. MDD1951– Single N-Channel Trench MOSFET 60V Ordering Information 60 VGS=10.0V 15 VGS=4.5V 50 RDS(ON) [mΩ ] ID (A) VGS=5.0V 10 VGS=10V 40 5 VGS=4.5V 30 0 0.0 0.5 1.0 1.5 5 2.0 10 15 20 ID [A] VDS (Volts) Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 200 2.0 180 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 1.8 VGS=10V ID=4.5A 1.4 VGS=4.5V ID=3.0A 1.2 1.0 160 140 120 100 TA = 125 ℃ 80 TA = 25 60 ℃ 0.8 40 0.6 -75 -50 -25 0 25 50 75 100 125 150 2 175 4 6 8 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 10 VDS=20V -IS [A] ID (A) 15 10 25 ℃ 25 ℃ 1 5 0.1 0.5 0 0 1 2 3 4 5 0.7 0.8 0.9 1.0 1.1 1.2 -VSD [V] VGS (Volts) Fig.5 Transfer Characteristics December 2009. Version 1.1 0.6 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD1951– Single N-Channel Trench MOSFET 60V 20 8 600 Capacitance [pF] VGS, Gate-Source Voltage [V] ※ Note : ID = 17A 6 4 Ciss 400 200 2 Coss Crss 0 0 0 5 0 10 5 10 15 20 25 30 VDS [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 30 10 2 ID, Drain Current [A] ID, Drain Current [A] 10 ms 10s 100ms 10 1 DC 1s Operation in This Area is Limited by R DS(on) 10 0 20 10 Single Pulse TJ=Max rated TC=25 ℃ 10 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current Vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 Zθ JC(t), Normalized Thermal Response 10 D=0.5 0 10 0.2 0.1 0.05 -1 0.02 10 0.01 -2 10 ※ Notes : single pulse Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve December 2009. Version 1.1 4 MagnaChip Semiconductor Ltd. MDD1951– Single N-Channel Trench MOSFET 60V 800 10 MDD1951– Single N-Channel Trench MOSFET 60V Physical Dimensions 2 Leads, DPAK (TO252) Dimensions are in millimeters unless otherwise specified December 2009. Version 1.1 5 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. December 2009. Version 1.1 6 MagnaChip Semiconductor Ltd. MDD1951– Single N-Channel Trench MOSFET 60V Worldwide Sales Support Locations