CDCLVC11xx www.ti.com SCAS895 – MAY 2010 3.3 V and 2.5 V LVCMOS High-Performance Clock Buffer Family Check for Samples: CDCLVC11xx FEATURES 1 • • • • • High-Performance 1:2, 1:3, 1:4, 1:6, 1:8, 1:10, 1:12 LVCMOS Clock Buffer Family Very Low Pin-to-Pin Skew < 50 ps Very Low Additive Jitter < 100 fs Supply Voltage: 3.3 V or 2.5 V fmax = 250 MHz for 3.3 V fmax = 180 MHz for 2.5 V CLKIN LV CMOS LV CMOS Y0 LV CMOS Y1 LV CMOS Y2 LV CMOS Y3 • • • LV CMOS • • Operating Temperature Range: –40°C to 85°C Available in 8-, 14-, 16-, 20-, 24-Pin TSSOP Package (all pin compatible) APPLICATIONS • General Purpose Communication, Industrial and Consumer Applications CLKIN 1 1G 2 Y0 3 GND 4 VDD 5 Y4 6 GND 7 Y6 8 VDD 9 Y9 10 GND 11 Y11 12 CDCLVC CDCLVC CDCLVC 1102 1103 1104 CDCLVC 1106 CDCLVC 1108 CDCLVC 1110 CDCLVC 1112 24 23 22 21 20 19 18 17 16 15 14 13 Y1 Y3 VDD Y2 GND Y5 VDD Y7 Y8 GND Y 10 VDD Yn 1G DESCRIPTION The CDCLVC11xx is a modular, high-performance, low-skew, general purpose clock buffer family from Texas Instruments. The whole family is designed with a modular approach in mind. It is intended to round up TI's series of LVCMOS clock generators. There are 7 different fan-out variations, 1:2 to 1:12, available. All of the devices are pin compatible to each other for easy handling. All family members share the same high performing characteristics like low additive jitter, low skew, and wide operating temperature range. The CDCLVC11xx supports an asynchronous output enable control (1G) which switches the outputs into a low state when 1G is low. Also, versions with synchronized enable control for glitch free switching and three-state outputs are planned in future device options. The CDCLVC11xx operate in a 2.5 V and 3.3 V environment and are characterized for operation from –40°C to 85°C. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated CDCLVC11xx SCAS895 – MAY 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. PACKAGE OPTIONS CLKIN 1G Y0 GND 1 2 3 4 CLKIN 1G Y0 GND 1 2 3 4 CDCLVC1103 CLKIN 1G Y0 GND 1 2 3 4 CDCLVC1104 CDCLVC1102 8 7 6 5 Y1 NC VDD NC 8 7 6 5 Y1 NC VDD Y2 8 7 6 5 Y1 Y3 VDD Y2 CLKIN 1G Y0 GND VDD Y4 GND 1 2 3 4 5 6 7 CLKIN 1G Y0 GND VDD Y4 GND Y6 1 2 3 4 5 6 7 8 CDCLVC1106 CDCLVC1108 14 13 12 11 10 9 8 Y1 Y3 VDD Y2 GND Y5 VDD 16 15 14 13 12 11 10 9 Y1 Y3 VDD Y2 GND Y5 VDD Y7 CLKIN 1 1G 2 Y0 3 GND 4 VDD 5 Y4 6 GND 7 Y6 8 VDD 9 Y 9 10 CLKIN 1 1G 2 Y0 3 GND 4 VDD 5 Y4 6 GND 7 Y6 8 VDD 9 Y 9 10 GND 11 Y 11 12 CDCLVC 1110 20 19 18 17 16 15 14 13 12 11 Y1 Y3 VDD Y2 GND Y5 VDD Y7 Y8 GND CDCLVC 1112 24 23 22 21 20 19 18 17 16 15 14 13 Y1 Y3 VDD Y2 GND Y5 VDD Y7 Y8 GND Y 10 VDD PIN FUNCTIONS DEVICES LVCMOS CLOCK INPUT CLOCK OUTPUT ENABLE LVCMOS CLOCK OUTPUT SUPPLY VOLTAGE GROUND CLKIN 1G Y0, Y1, … Y11 VDD GND CDCLVC1102 1 2 3, 8 6 4 CDCLVC1103 1 2 3, 8, 5 6 4 CDCLVC1104 1 2 3, 8, 5, 7 6 4 CDCLVC1106 1 2 3, 14, 11, 13, 6, 9 5, 8, 12 4, 7, 10 CDCLVC1108 1 2 3, 16, 13, 15, 6, 11, 8, 9 5, 10, 14 4, 7, 12 CDCLVC1110 1 2 3, 20, 17, 19, 6, 15, 8, 13, 10 5, 9, 14, 18 4, 7, 11, 16 CDCLVC1112 1 2 3, 24, 21, 23, 6, 19, 8, 17, 16, 10, 14, 12 5, 9, 13, 18, 22 4, 7, 11, 15, 20 OUTPUT LOGIC TABLE INPUTS CLKIN 2 OUTPUTS 1G Yn X L L L H L H H H Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CDCLVC11xx CDCLVC11xx www.ti.com SCAS895 – MAY 2010 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE / UNIT VDD Supply voltage range VIN Input voltage range VO Output voltage range IIN Input current ±20 mA IO Continuous output current ±50 mA TJ Maximum junction temperature TST Storage temperature range (1) (2) –0.5 V to 4.6 V (2) –0.5 V to VDD + 0.5 V (2) –0.5 V to VDD + 0.5 V 125°C –65°C to 150°C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. This value is limited to 4.6 V maximum. THERMAL INFORMATION DCDLVC1102/03/04 CDCLVC1106 CDCLVC1108 CDCLVC11010 PW PW PW PW PW 8 PINS 14 PINS 16 PINS 20 PINS 24 PINS 149.4 112.6 108.4 83.0 87.9 69.4 48.0 33.6 32.3 26.5 THERMAL METRIC (1) Junction-to-ambient thermal resistance (2) qJA qJC(top) (1) (2) (3) Junction-to-case(top) thermal resistance (3) CDCLVC1112 UNITS °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) VDD Supply voltage range VIL Low-level input voltage VIH High-level input voltage Vth Input threshold voltage tr / tf Input slew rate MIN NOM MAX 3.3 V supply 3.0 3.3 3.6 2.5 V supply 2.3 2.5 2.7 VDD = 3.0 V to 3.6 V VDD/2 – 600 VDD = 2.3 V to 2.7 V VDD/2 – 400 VDD = 3.0 V to 3.6 V VDD/2 + 600 VDD = 2.3 V to 2.7 V VDD/2 + 400 VDD = 2.3 V to 3.6 V 1 V mV mV VDD/2 1.8 UNIT mV 4 tw Minimum pulse width at CLKIN VDD = 3.0 V to 3.6 V VDD = 2.3 V to 2.7 V 2.75 fCLK LVCMOS clock Input Frequency VDD = 3.0 V to 3.6 V DC 250 VDD = 2.3 V to 2.7 V DC 180 TA Operating free-air temperature –40 85 V/ns ns MHz Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CDCLVC11xx °C 3 CDCLVC11xx SCAS895 – MAY 2010 www.ti.com DEVICE CHARACTERISTICS over recommended operating free-air temperature range (unless otherwise noted) MIN TYP (1) MAX 1G = VDD; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 3.6 V 6 10 mA 1G = VDD; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 2.7 V 3 6 mA 60 µA PARAMETER CONDITION UNIT OVERALL PARAMETERS FOR ALL VERSIONS IDD Static device current (2) IPD Power down current 1G = 0 V; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 3.6 V or 2.7 V Power dissipation capacitance per output (3) VDD = 3.3 V; f = 10 MHz 6 pF VDD = 2.5 V; f = 10 MHz 4.5 pF CPD Input leakage current at 1G II Input leakage current at CLKIN ROUT Output impedance fOUT Output frequency ±8 VI = 0 V or VDD, VDD = 3.6 V or 2.7 V ± 25 VDD = 3.3 V Ω 45 VDD = 2.5 V µA Ω 60 VDD = 3.0 V to 3.6 V DC 250 MHz VDD = 2.3 V to 2.7 V DC 180 MHz OUTPUT PARAMETERS FOR VDD = 3.3 V ± 0.3 V VOH High-level output voltage VOL Low-level output voltage VDD = 3 V, IOH = –0.1 mA 2.9 VDD = 3 V, IOH = –8 mA 2.5 VDD = 3 V, IOH = –12 mA 2.2 VDD = 3 V, IOL = 0.1 mA 0.1 VDD = 3 V, IOL = 8 mA 0.5 VDD = 3 V, IOL = 12 mA 0.8 tPLH, tPHL Propagation delay CLKIN to Yn tsk(o) Output skew Equal load of each output tr/tf Rise and fall time 20%–80% (VOH - VOL) tDIS Output disable time tEN Output enable time tsk(p) Pulse skew ; tPLH(Yn) – tPHL(Yn) To be measured with input duty cycle of 50% (4) V V 0.8 2.0 ns 50 ps 0.3 0.8 ns 1G to Yn 6 ns 1G to Yn 6 ns 180 ps tsk(pp) Part-to-part skew Under equal operating conditions for two parts 0.5 ns tjitter 12kHz…20 MHz, fOUT = 250 MHz 100 fs (1) (2) (3) (4) 4 Additive jitter rms All typical values are at respective nominal VDD. For switching characteristics, outputs are terminated to 50 Ω to VDD/2 (see Figure 1). For dynamic IDD over frequency see Figure 8 and Figure 9. This is the formula for the power dissipation calculation (see Figure 8 and the Power Consideration section). Ptot = Pstat + Pdyn + PCload [W] Pstat = VDD × IDD [W] Pdyn = CPD × VDD2 × ƒ [W] PCload = Cload × VDD2 × ƒ × n [W] n = Number of switching output pins tsk(p) depends on output rise- and fall-time (tr/tf). The output duty-cycle can be calculated: odc = (tw(OUT) ± tsk(p))/tperiod; tw(OUT) is pulse-width of output waveform and tperiod is 1/fOUT. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CDCLVC11xx CDCLVC11xx www.ti.com SCAS895 – MAY 2010 DEVICE CHARACTERISTICS (continued) over recommended operating free-air temperature range (unless otherwise noted) PARAMETER CONDITION MIN TYP (1) MAX UNIT OUTPUT PARAMETERS FOR VDD = 2.5 V ± 0.2 V VDD = 2.3 V, IOH = –0.1 mA 2.2 VDD = 2.3 V, IOH = –8 mA 1.7 VOH High-level output voltage VOL Low-level output voltage tPLH, tPHL Propagation delay CLKIN to Yn tsk(o) Output skew Equal load of each output tr/tf Rise and fall time 20%–80% reference point tDIS Output disable time tEN tsk(p) V VDD = 2.3 V, IOL = 0.1 mA 0.1 VDD = 2.3 V, IOL = 8 mA 0.5 V 1.0 2.6 ns 50 ps 0.3 1.2 ns 1G to Yn 10 ns Output enable time 1G to Yn 10 ns Pulse skew ; tPLH(Yn) – tPHL(Yn) To be measured with input duty cycle of 50% 220 ps tsk(pp) Part-to-part skew Under equal operating conditions for two parts 1.2 ns tjitter 12kHz…20 MHz, fOUT = 180 MHz 350 fs (5) Additive jitter rms (5) tsk(p) depends on output rise- and fall-time (tr/tf). The output duty-cycle can be calculated: odc = (tw(OUT) ± tsk(p))/tperiod; tw(OUT) is pulse-width of output waveform and tperiod is 1/fOUT. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CDCLVC11xx 5 CDCLVC11xx SCAS895 – MAY 2010 www.ti.com PARAMETERS MEASUREMENT INFORMATION VDD = 3.3 V or 2.5 V LVCMOS Output ZO = 50 W R = 50 W C = 2 pF parasitic capasitance from Measurement Equipment VDD/2 Figure 1. Test Load Circuit VDD VDD = 3.3 V or 2.5 V R= 100 W LVCMOS Output ZO = 50 W parasitic input capacitance R= 100 W Figure 2. Application Load With 50 Ω Line Termination VDD = 3.3 V or 2.5 V RS = 10 W (VDD = 3.3 V) RS = 0 W (VDD = 2.5 V) LVCMOS Output ZO = 50 W parasitic input capacitance Figure 3. Application Load With Series Line Termination VDD / 2 VIN / 2 Yn 1G VIN / 2 Yn tDIS tsk(o) tEN Figure 4. tDIS and tEN for Disable Low 6 VDD / 2 Yn+1 tsk(o) Figure 5. Output Skew tsk(o) Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CDCLVC11xx CDCLVC11xx www.ti.com SCAS895 – MAY 2010 PARAMETERS MEASUREMENT INFORMATION (continued) V DD / 2 CLKIN CLKIN VOH V DD / 2 Yn 80 % V OH -V OL Yn 20 % V OH -V OL V OL tr t PLH tf t PHL Note: tsk (p) = | tPLH – t PHL | Figure 6. Pulse Skew tsk(p) and Propagation Delay tPLH/tPHL Figure 7. Rise/Fall Times tr/tf TYPICAL CHARACTERISTICS Power Consideration The following power consideration refers to the device-consumed power consumption only. The device power consumption is the sum of static power and dynamic power. The dynamic power usage consists of two components: 1. Power used by the device as it switches states. 2. Power required to charge any output load. The output load can be capacitive only or capacitive and resistive. The following formula and the power graphs in Figure 8 and Figure 9 can be used to obtain the power consumption of the device: Pdev = Pstat + n (Pdyn + PCload) Pstat = VDD x IDD Pdyn + PCload = see Figure 8 and Figure 9 where: VDD = Supply voltage (3.3 V or 2.5 V) IDD = Static device current (typ 6 mA for VDD = 3.3 V; typ 3 mA for VDD = 2.5 V) n = Number of switching output pins Example for Device Power Consumption for CDCLVC1104: 4 outputs are switching, f = 120 MHz, VDD = 3.3 V and Cload = 2 pF per output: Pdev = Pstat + n (Pdyn + PCload) = 19.8 mW + 40 mW = 59.8 mW Pstat = VDD x IDD = 6 mA x 3.3 V = 19.8 mW n (Pdyn + PCload) = 4 x 10 mW = 40 mW NOTE For dimensioning the power supply, the total power consumption needs to be considered. The total power consumption is the sum of the device power consumption and the power consumption of the load. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CDCLVC11xx 7 CDCLVC11xx SCAS895 – MAY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) 40 15 VDD = 3.3 V VDD = 2.5 V Pdyn + PCload8pF 30 Pdyn + PCload50/2 20 10 Pdyn + PCload2pF 0 0 Device Power Consumption - mW Device Power Consumption - mW Pdyn + PCload8pF Pdyn + PCload50/2 10 5 Pdyn + PCload2pF 0 0 20 40 60 80 100 120 140 160 180 200 220 240 f - Clock Frequency - MHz Figure 8. Device Power Consumption vs Clock Frequency (Load 50Ω into VDD/2. 2pF, 8pF; Per Output) 60 80 100 120 140 f - Clock Frequency - MHz 160 180 3 VDD = 2.5 V Idyn - Dynamic Supply Current - mA VDD = 3.3 V Idyn - Dynamic Supply Current - mA 40 Figure 9. Device Power Consumption vs Clock Frequency (Load 50Ω into VDD/2. 2pF, 8pF; Per Output) 5 4 Idyn = CPD * VDD * f 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 f - Clock Frequency - MHz Figure 10. Dynamic Supply Current vs Clock Frequency (CPD = 6pF, No Load; Per Output) 8 20 2 Idyn = CPD * VDD * f 1 0 0 20 40 60 80 100 120 140 f - Clock Frequency - MHz 160 180 Figure 11. Dynamic Supply Current vs Clock Frequency (CPD = 4.5pF, No Load; Per Output) Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CDCLVC11xx IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. 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