Diode Semiconductor Korea SURFACE MOUNT RECTIFIERS GL41A---GL41Y VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A FEATURES ◇ Plastic package has underwriters laboratories DO - 213AB flammability classification 94V-0 ◇ Glass passivated chip junction ◇ For surface mount applications SOLDERABLE ENDS ◇ High temperature metallurgically bonded construction 0 D2=D1 ＋ －0.20 ◇ Cavity-free glass passivated junction D1 2.6± 0.15 ◇ High temperature soldering guaranteed:450 ℃/5 seconds at terminals.Complete device sub-mersible temperature of 265℃ for 10 seconds in solder bath D2 MECHANICAL DATA 0.5± 0.1 0.5± 0.1 ◇ Case: JEDEC DO-213AB,molded plastic 4.9± 0.2 ◇ Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 ◇ Polarity: Color band denotes cathode Dimensions in millimeters ◇ Weight: 0.0046 ounces, 0.116 grams ◇ Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%. GL GL GL GL GL GL GL GL GL UNITS 41A 41B 41D 41G 41J 41K 41M 41T 41Y Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see FIG.1) VRRM VRMS VDC 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 1000 1300 1600 560 700 910 1120 800 1000 1300 1600 V V V I(AV) 1.0 A IFSM 30 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage @1.0A Maximum reverse current @T A=25℃ at rated DC blocking voltage @T A=125℃ Typical junction capacitance (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range VF IR Cj RθJA Tj TSTG 1.2 1.1 10 50 8.0 75 - 55 ---- +175 - 55 ---- +175 V µA pF ℃/W ℃ ℃ NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to ambient, 0.24×0.24"(6.0×6.0mm) copper pads to each terminal. www.diode.kr Diode Semiconductor Korea GL41A- - -GL41Y FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT 50 Resistive or inductive Load 1.0 0.8 0.6 0.4 0.2X0.2(5.0X5.0mm) THICK COPPERPAND AREAS 0.2 0 0 25 50 75 100 125 150 175 200 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 1.2 40 30 TJ=TJmax 8.3ms Single Half Sine-Wave 20 10 0 10 1 AMBIENT TEMPERATURE NUMBER OF CYCLES AT 60Hz FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTICS Y GL41A--GL41J 100 GL41K--GL41Y INSTANTANEOUS FORWARD VOLTAGE,VOLTS 100 O TJ=125 C 10 O TJ=75 C 1 TJ=25OC 0.1 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-TRANSIENT THERMAL IMPEDANCE 100 60 f=1MHz TJ=25 40 20 10 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 100 TRANSIENT THERMAL IMPEDANCE, /W JUNCTION CAPACITANCE pF 100 10 1 UNITS MOUNTED on 0.20x0.20''(5.0X5.0mm)X0.5mil INCHES(0.013mm) THICK COPPERLAND AREAS 0.1 0.01 0.1 1 10 100 PULSE DURATION,SEC www.diode.kr