Product Bulletin OPB821TX September 1996 Hi-Rel Slotted Optical Switches Types OPB821TX, OPB821TXV 24.0 (609.60) #24 AWG Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Non-contact switching • Hermetically sealed components • Components processed to Optek’s Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +125o C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Phototransistor Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) screening program patterned after MIL-PRF-19500 for TX and TXV devices Description The OPB821TX or OPB821TXV consists of a gallium aluminum arsenide LED and a silicon phototransistor soldered into a printed circuit board, then mounted in a high temperature plastic housing on opposite sides of an 0.080 inch (2.03 mm) wide slot. Lead wires are #24 AWG polytetraflouroethylene (PTFE) insulated conforming to MIL-W-16878. Phototransistor switching takes place whenever an opaque object passes through the slot. For maximum output signal, neither the LED or the phototransistor in the OPB821TX or the OPB821TXV is apertured. The OPB821TX and OPB821TXV use optoelectronic components that have been processed and tested as either TX or TXV components per MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. Optek Technology, Inc. Notes: (1) Derate Linearly 1.00 mW/o C above 25o C. (2) Methanol or isopropanol are recommended cleaning agents. 1215 W. Crosby Road Carrollton, Texas 75006 13-38 (972) 323-2200 Fax (972) 323-2396 Types OPB821TX, OPB821TXV Electrical Characteristics (TA = 25o C unless otherwise noted) Symbol Parameter Min Typ Max Units Test Conditions 1.00 1.35 1.70 V IF = 20.0 mA 1.20 1.55 1.90 V IF = 20.0 mA, TA = -55o C 0.80 1.20 1.60 V IF = 20.0 mA, TA = 100o C 0.1 100 µA VR = 2.0 V Input Diode Forward Voltage(3) VF IR Reverse Current Output Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage 50 110 V IC = 1.0 mA, IF = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 7.0 10.0 V IE = 100 µA, IF = 0 Collector-Emitter Dark Current 0.2 100 nA VCE = 10.0 V, IF = 0 10 100 µA VCE = 10.0 V, IF = 0, TA = 100o C 800 µA VCE = 10.0 V, IF = 20.0 mA 500 µA VCE = 10.0 V, IF = 20.0 mA, TA = -55o C 500 µA VCE = 10.0 V, IF = 20.0 mA, TA = 100o C IC(off) Coupled On-State Collector Current(3) IC(on) Collector-Emitter Saturation Voltage 0.20 0.30 V IC = 250 µA, IF = 20.0 mA tr Output Rise Time 12.0 20.0 µs tf Output Fall Time 12.0 20.0 µs VCC = 10.0 V, IF = 20.0 mA, RL = 1,000 Ω VCE(SAT) (3) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 13-39