Infineon BFR106 Npn silicon rf transistor Datasheet

BFR106
NPN Silicon RF Transistor
• High linearity low noise RF transistor
• 22dBm OP1dB and 31dBm OIP3
2
3
@ 900MHz,8V,70mA
1
• For UHF/VHF applications
• Driver for multistage amplifiers
• For linear broadband and antenna amplifiers
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR106
Marking
R7s
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage,
VCEO
Value
Unit
V
TA = 25°C
16
TA = -55°C
15
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
3
Collector current
IC
210
Base current
IB
21
Total power dissipation1)
Ptot
700
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
mA
TS ≤ 73 °C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
≤ 110
K/W
1T
S is measured on the collector lead at the soldering point to the pcb
2For
calculation of RthJA please refer to Application Note AN077 Thermal Resistance
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BFR106
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
15
-
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
Collector-emitter cutoff current
µA
ICES
VCE = 20 V, VBE = 0
-
-
1
VCE = 10 V, VBE = 0
-
0.001
0.03
ICBO
-
1
30
IEBO
-
1
30
hFE
70
100
140
Collector-base cutoff current
nA
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
-
IC = 70 mA, VCE = 8 V, pulse measured
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BFR106
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
3.5
5
-
Ccb
-
0.85
1.2
Cce
-
0.27
-
Ceb
-
3.9
-
GHz
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, V BE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, V BE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 20 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
-
1.8
-
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
-
3
-
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BFR106
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics (verified by random sampling)
Power gain, maximum available1)
dB
Gma
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
-
13
-
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
-
8.5
-
|S21e|2
Transducer gain
dB
IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
10.5
-
IC = 70 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
-
5
-
IP3
-
31
-
P-1dB
-
22
-
Third order intercept point at output2)
dBm
VCE = 8 V, IC = 70 mA, f = 0.9 GHz ,
ZS=ZL =50Ω
1dB Compression point
IC = 70 mA, VCE = 8 V, ZS =ZL =50Ω,
f = 0.9 GHz
1/2
ma = |S21e / S12e | (k-(k²-1) )
2IP value depends on termination of all intermodulation frequency components.
3
1G
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR106
Total power dissipation P tot = ƒ(TS)
800
mW
Ptot
600
500
400
300
200
100
0
0
20
40
60
80
100
120 °C
150
TS
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BFR106
SPICE Parameter (Gummel-Poon)
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet
website www.infineon.com/rf.models.
Please consult our website and download the latest versions before
actually starting your design.
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Package SOT23
BFR106
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
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2010-12-03
BFR106
Datasheet Revision History: 3 Dezember 2010
This datasheet replaces the revisions from 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision: 30 March 2007
Page
Subject (changes since last revision)
1
Datasheet has final status
2
Typical values for leakage currents included, values for maximum leakage
currents reduced
3
Spice Parameter removed from the datasheet, respective link to the internet
site added
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2010-12-03
BFR106
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
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endangered.
9
2010-12-03
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