Formosa EGFM103 Chip effcienct fast rectifier Datasheet

Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
DS-121514
2008/02/10
2010/05/10
Revision
D
Page.
7
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
1.0A Sufrace Mount
Efficient Fast Rectifiers-50-600V
Package outline
Features
SMA
• Batch process design, excellent power dissipation offers
•
•
•
•
•
•
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current & surge capability.
Low forward dropdown voltage
Glass passivated chip junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. EGFM101-H.
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.068(1.7)
0.060(1.5)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA
• Terminals : Solder plated, solderable per
0.032(0.8) Typ.
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
o
T A=25 C unless otherwise noted)
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
MAX.
UNIT
IO
1.0
A
I FSM
30
A
Symbol
TYP.
MIN.
O
V R = V RRM T J = 25 C
Reverse current
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
Storage temperature
*1
V RRM
(V)
V RMS*2
(V)
*3
VR
(V)
EGFM101
50
35
50
EGFM102
100
70
100
EGFM103
200
140
200
*4
VF
(V)
Operating
temperature
T J, ( OC)
*5
t rr
(ns)
25
400
280
400
1.25
EGFM105
600
420
600
1.75
pF
15
+175
-65
O
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
0.875
EGFM104
μA
100
CJ
T STG
SYMBOLS
5.0
IR
O
V R = V RRM T J = 125 C
-55 to +150
*4 Maximum forward voltage@I F=1.0A
*5 Maximum Reverse recovery time , note 1
Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
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TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID
Issued Date
Revised Date
DS-121514
2008/02/10
2010/05/10
Revision
D
Page.
7
Rating and characteristic curves (EGFM101 THRU EGFM105)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
10
INSTANTANEOUS FORWARD CURRENT,(A)
EGFM101 - EGFM103
1
EGFM104
O
TJ=25 C
0.1
1.2
1.0
0.8
0.6
P.C.B. Mounted on
0.2 " x 0.2 " (5 mm x 5 mm)
Copper Pad Areas
0.4
0.2
0
0
25
EGFM105
50
75
100
125
150
175
LEAD TEMPERATURE ( °C)
pulse width =300us
1% duty cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWAARD SURGE CURRENT,(A)
FORWARD VOLTAGE,(V)
50
40
30
8.3ms Single Half
TJ=25 C
JEDEC method
10
0
1
5
(+)
1W
NONINDUCTIVE
Sine Wave
20
50
10
100
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
TJ=25 C
f=1.0MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE,(pF)
trr
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
30
25
20
15
10
5
1cm
SET TIME BASE FOR
10 / 20ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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Page 3
Document ID
Issued Date
Revised Date
DS-121514
2008/02/10
2010/05/10
Revision
D
Page.
7
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
EGFM101
EGFM102
EGFM103
EGFM104
EGFM105
E11
E12
E13
E14
E15
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SMA
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
Revised Date
DS-121514
2008/02/10
2010/05/10
Revision
D
Page.
7
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SMA
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.80
5.00
1.90
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
4.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
DS-121514
2008/02/10
2010/05/10
Revision
D
Page.
7
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
SMA
7"
2,000
4.0
20,000
183*155*183
178
382*356*392
160,000
16.0
SMA
13"
7,500
4.0
15,000
337*337*37
330
350*330*360
120,000
14.2
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Page 6
Document ID
Issued Date
Revised Date
DS-121514
2008/02/10
2010/05/10
Revision
D
Page.
7
Chip Effcienct Fast Rectifiers
Formosa MS
EGFM101 THRU EGFM105
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16" ± 1/32"
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=150 C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1038
O
MIL-STD-750D
METHOD-1027
O
O
5. Intermittent Operation Life
6. Pressure Cooker
T A = 25 C, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
O
15P SIG at T A=121 C for 4 hrs.
O
MIL-STD-750D
METHOD-1051
O
7. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Forward Surge
8.3ms single half sine-wave , one surge.
9. Humidity
at T A=85 C , RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 C for 1000 hrs.
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
O
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TEL:886-2-22696661
FAX:886-2-22696141
MIL-STD-750D
METHOD-1031
O
Page 7
Document ID
Issued Date
Revised Date
DS-121514
2008/02/10
2010/05/10
Revision
D
Page.
7
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