Vishay DG3003DB Low-voltage sub-ohm spst/spdt micro foot analog switch Datasheet

DG3001/3002/3003
Vishay Siliconix
New Product
Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOTr Analog Switch
FEATURES
BENEFITS
D MICRO FOOT Chip Scale Package
(1.0 x 1.5 mm)
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On-Resistance - rDS(on): 0.4 W
D Fast Switching - tON : 47 ns, tOFF: 40 ns
D Low Power Consumption
D TTL/CMOS Compatible
D
D
D
D
APPLICATIONS
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
D
D
D
D
D
D
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
PCM Cards
PDA
DESCRIPTION
The DG3001/DG3002/DG3003 are monolithic CMOS analog
switches designed for high performance switching of analog
signals. The DG3001 and DG3002 are configured as SPST
switches, and the DG3003 is an SPDT switch. Combining low
power, high speed (tON: 47 ns, tOFF: 40 ns), low on-resistance
(rDS(on): 0.4 W) and small physical size (MICRO FOOT,
6-bump), the DG3001/DG3002/DG3003 are ideal for portable
and battery powered applications requiring high performance
and efficient use of board space.
The DG3001/DG3002/DG3003 are built on Vishay Siliconix’s
low voltage JI2 process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MICRO FOOT (6-Bump)
MICRO FOOT (6-Bump)
DG3001DB
MICRO FOOT (6-Bump)
DG3002DB
DG3003DB
V+
B1
A1
NO
(Source1)
V+
B1
A1
NC
(Source1)
V+
B1
A1
NO
(Source1)
IN
B2
A2
COM
IN
B2
A2
COM
IN
B2
A2
COM
B3
A3
COM
GND
B3
A3
COM
GND
B3
A3
GND
NC (Source2)
A1 Locator
Device Marking: 3003
xxx = Date/Lot Traceability Code
ORDERING INFORMATION
NC
NO
0
ON
OFF
1
OFF
ON
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
A1 Locator
Device Marking: 3002
xxx = Date/Lot Traceability Code
TRUTH TABLE
XXX
3003
XXX
3002
XXX
3001
A1 Locator
Device Marking: 3001
xxx = Date/Lot Traceability Code
Logic
Top View
Top View
Top View
Temp Range
Package
-40 to 85°C
MICRO FOOT: 6-Bump
(3 2, 0.5-mm pitch,
165 mm nom.
165-mm
nom bump height)
Part Number
DG3001DB
DG3002DB
DG3003DB
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1
DG3001/3002/3003
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . . "250 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "400 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Package Reflow Conditionsb
VPR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
Power Dissipation (Packages)c
6-Bump, 2 x 3 MICRO FOOTd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b
Refer to IPC/JEDEC (J-STD-020A)
c
All bumps soldered to PC Board.
d
Derate 3.1 mW/_C above 70_C
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Limits
−40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistanced
rON
rON
Flatness
rON Flatnessd
rON Matchd
Switch Off Leakage
VNO, VNC,
VCOM
Current f
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
Full
0.4
0.7
0.8
Room
0.1
0.2
0.01
0.05
DrON
Room
INO(off),
INC(off)
Room
Full
1
−10
1
10
Room
Full
1
−10
1
10
Room
Full
1
−10
1
10
2
ICOM(off)
Channel-On Leakage Currentf
V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA
ICOM(on)
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
W
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Input Currentd
Full
Cin
IINL or IINH
0.4
VIN = 0 or V+
Full
5
−1
V
pF
1
mA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On
Capacitanced
VNO or VNC = 2
2.0
0V
V, RL = 300 W
W, CL = 35 pF
Figure 1 and 2
CNO(off),
CNC(off)
Room
Full
47
71
Room
Full
40
59
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W,
W CL = 5 pF,
pF f = 100 kHz
VIN = 0 or V+, f = 1 MHz
CON
1
ns
6
Room
64
Room
−70
Room
−70
Room
100
Room
340
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Currentd
I+
2.7
VIN = 0 or V+
0.1
3.3
V
1.0
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
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Document Number: 72505
S-32069—Rev. A, 27-Oct-03
DG3001/3002/3003
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Single Supply Voltage
2.00
r ON − On-Resistance ( W )
r ON − On-Resistance ( W )
V+ = 3 V
IS = 10 mA
T = 25 _C
IS = 10 mA
1.75
1.50
1.25
V+ = 1.8 V
1.00
V+ = 2 V
0.75
V+ = 2.7 V
V+ = 3 V
0.50
V+ = 5 V
0.25
rON vs. Analog Voltage and Temperature
1.00
0.80
85_C
0.60
25_C
0.40
−40_C
0.20
V+ = 3.3 V
0.00
0.0
0.00
0
1
2
3
4
5
0.5
1.0
VCOM − Analog Voltage (V)
2.0
2.5
3.0
VCOM − Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
100 mA
10000
10 mA
1000
V+ = 5 V
VIN = 0 V
I+ − Supply Current (A)
I+ − Supply Current (nA)
1.5
100
10
V+ = 5 V
1 mA
100 mA
10 mA
1 mA
100 nA
10 nA
1
−60
1 nA
−40
−20
0
20
40
60
80
100
10
100
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Temperature (_C)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
1000
250
V+ = 5 V
200
ICOM(on)
V+ = 5 V
150
Leakage Current (pA)
Leakage Current (pA)
1K
100
ICOM(off)
INO(off), INC(off)
ICOM(off)
100
50
ICOM(on)
0
INO(off), INC(off)
−50
−100
−150
−200
10
−60
−40
−20
0
20
40
Temperature (_C)
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
60
80
100
−250
0
1
2
3
4
5
VCOM, VNO, VNC − Analog Voltage (V)
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DG3001/3002/3003
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10
90
0
80
tON V+ = 2 V
70
tOFF V+ = 2 V
60
tON V+ = 3 V
50
40
tOFF V+ = 3 V
30
Loss, OIRR, XTALK (dB)
t ON, t OFF − Switching Time (ns)
Switching Time vs. Temperature and Supply Voltage
100
−20
−50
−80
0
20
40
60
80
V+ = 3 V
RL = 50 W
−60
10
−20
OIRR
−40
−70
−40
XTALK
−30
20
0
−60
LOSS
−10
−90
100 K
100
1M
10 M
100 M
1G
Frequency (Hz)
Temperature (_C)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
3.0
250
Q − Charge Injection (pC)
V T − Switching Threshold (V)
200
2.5
2.0
1.5
1.0
150
V+ = 5 V
100
50
0
−50
V+ = 3 V
V+ = 2 V
−100
−150
0.5
−200
0.0
−250
0
1
2
3
4
V+ − Supply Voltage (V)
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4
5
6
7
0
1
2
3
4
5
VCOM − Analog Voltage (v)
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
DG3001/3002/3003
Vishay Siliconix
New Product
TEST CIRCUITS
V+
VINH
Logic
Input
V+
Switch
Input
VINL
Switch Output
COM
NO or NC
VOUT
RL
300 W
GND
0.9 x VOUT
Switch
Output
IN
Logic
Input
tr t 5 ns
tf t 5 ns
50%
CL
35 pF
0V
tOFF
tON
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
V OUT + V COM
ǒ
RL
R L ) R ON
Ǔ
FIGURE 1. Switching Time
V+
Logic
Input
V+
COM
NO
VNO
VINH
tr <5 ns
tf <5 ns
VINL
VO
NC
VNC
RL
300 W
IN
CL
35 pF
GND
VNC = VNO
VO
Switch
Output
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen
+
Vgen
V+
COM
NC or NO
IN
VOUT
DVOUT
VOUT
CL = 1 nF
IN
On
Off
On
GND
Q = DVOUT x CL
VIN = 0 − V+
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
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5
DG3001/3002/3003
Vishay Siliconix
New Product
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0V, 2.4 V
IN
COM
RL
V COM
Off Isolation + 20 log V
NOńNC
GND
Analyzer
FIGURE 4. Off-Isolation
V+
10 nF
V+
COM
Meter
0 V, 2.4 V
IN
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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Document Number: 72505
S-32069—Rev. A, 27-Oct-03
DG3001/3002/3003
Vishay Siliconix
New Product
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (3 X 2, 0.5-mm PITCH, 165-mm BUMP HEIGHT)
6
O 0.150 X 0.180
Note 2
Solder Mask O X Pad Dia. + 0.1
0.5
Silicon
0.5
A2
A
A1
Recommended Land Pattern
Bump
Note 1
Index-Bump A1
Note 3
3
2
1
b Diameter
A
XXX
3003
E
e
B
S
S
Top Side (Die Back)
e
D
NOTES (Unless Otherwise Specified):
1.
Bump is Eutectic 63/57 Sn/Pb.
2.
Non-solder mask defined copper landing pad.
3.
Laser Mark on silicon die back; no coating. Shown is not actual marking; sample only.
MILLIMETERS*
INCHES
Dim
Min
Max
Min
Max
A
0.610
0.685
0.0240
0.0270
A1
0.140
0.190
0.0055
0.0075
A2
0.470
0.495
0.0185
0.0195
b
0.180
0.250
0.0071
0.0098
D
1.490
1.515
0.0587
0.0596
E
0.990
1.015
0.0390
0.0400
e
S
0.5 BASIC
0.245
0.0197 BASIC
0.258
0.0096
0.0101
* Use millimeters as the primary measurement.
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
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