Inchange Semiconductor Product Specification BD317 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD318 APPLICATIONS ·Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current(peak) 20 A IB Base current 5 A PD Total power dissipation 200 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BD317 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 1.8 V VBE(on) Base-emitter on voltage IC=8A ;VCE=2.0V 1.5 V ICBO Collector cut-off current VCB=100V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 25 hFE-2 DC current gain IC=10A ; VCE=4V 15 Transition frequency IC=1A ; VCE=20V,f=0.5MHz 1.0 fT CONDITIONS 2 MIN TYP. MAX 100 UNIT V MHz Inchange Semiconductor Product Specification BD317 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3