ISC BD317 Silicon npn power transistor Datasheet

Inchange Semiconductor
Product Specification
BD317
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD318
APPLICATIONS
·Designed for high power amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
16
A
ICM
Collector current(peak)
20
A
IB
Base current
5
A
PD
Total power dissipation
200
W
Tj
Junction temperature
-65~200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BD317
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=0.8A
1.8
V
VBE(on)
Base-emitter on voltage
IC=8A ;VCE=2.0V
1.5
V
ICBO
Collector cut-off current
VCB=100V;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE-1
DC current gain
IC=5A ; VCE=4V
25
hFE-2
DC current gain
IC=10A ; VCE=4V
15
Transition frequency
IC=1A ; VCE=20V,f=0.5MHz
1.0
fT
CONDITIONS
2
MIN
TYP.
MAX
100
UNIT
V
MHz
Inchange Semiconductor
Product Specification
BD317
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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