PD - 96315C
AUIRF7737L2TR
AUIRF7737L2TR1
•
•
AUTOMOTIVE GRADE
Automotive DirectFET® Power MOSFET
Advanced Process Technology
V(BR)DSS
40V
Optimized for Automotive Motor Drive, DC-DC and
RDS(on) typ.
1.5mΩ
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
max.
1.9mΩ
High Power Density
ID (Silicon Limited)
156A
Low Parasitic Parameters
Qg
Dual Sided Cooling
89nC
•
•
•
•
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
D
SC
M2
S
S
S
S
S
S
D
DirectFET® ISOMETRIC
L6
Applicable DirectFET® Outline and Substrate Outline
SB
G
M4
L4
L6
L8
Description
The AUIRF7737L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7737L2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
TP
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
f
f
e
f
e
g
h
g
g
Units
40
± 20
156
110
31
315
624
83
3.3
104
386
h
V
A
W
mJ
See Fig.18a, 18b, 16, 17
270
-55 to + 175
A
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
HEXFET® is a registered trademark of International Rectifier.
–––
12.5
20
–––
–––
45
–––
–––
1.8
0.5
°C/W
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
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fl
e
j
k
f
0.56
W/°C
1
11/08/10
AUIRF7737L2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
40
–––
–––
0.03
–––
–––
–––
2.0
–––
100
–––
–––
–––
–––
–––
1.5
3.0
-10
–––
0.6
–––
–––
–––
–––
1.9
4.0
–––
–––
–––
5
250
100
-100
Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 94A
V
VDS = VGS, ID = 150µA
mV/°C
VDS = 10V, ID = 94A
S
i
Ω
µA
nA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Total Gate Charge
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
89
18
8
34
29
42
39
12
19
22
14
5469
1193
534
4296
1066
1615
134
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
VDS = 20V, VGS = 10V
ID = 94A
nC
nC
ns
See Fig.11
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10V
ID = 94A
RG = 1.8Ω
i
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
g
Surface mounted on 1 in. square Cu
(still air).
Min.
Typ.
Max.
–––
–––
156
–––
–––
624
–––
–––
–––
–––
35
32
1.3
53
48
Mounted to a PCB with small
clip heatsink (still air)
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS = 94A, VGS = 0V
IF = 94A, VDD = 20V
di/dt = 100A/µs
i
D
G
S
i
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes through are on page 10
2
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AUIRF7737L2TR/TR1
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
LARGE-CAN
MSL1
Class M4(+/-425V)
(per AEC-Q101-002)
ESD
Human Body Model
Class H1C(+/-2000V)
(per AEC-Q101-001)
Charged Device
Model
N/A
(per AEC-Q101-005)
RoHS Compliant
Yes
http://www.irf.com
Qualification standards can be found at International Rectifiers web site:
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7737L2TR/TR1
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
4.5V
100
BOTTOM
4.5V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.1
0.1
1
10
0.1
100
6
ID = 94A
4
3
T J = 125°C
2
1
T J = 25°C
0
4
6
8
10
12
14
16
18
100
2.8
2.5
TJ = 125°C
2.2
1.9
1.6
TJ = 25°C
1.3
Vgs = 10V
1.0
20
5
30
55
80
105 130 155 180 205
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
2.0
VDS = 25V
≤60µs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
Fig 1. Typical Output Characteristics
5
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
100
T J = -40°C
TJ = 25°C
TJ = 175°C
10
1
1.8
ID = 94A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRF7737L2TR/TR1
1000
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
5.5
4.5
3.5
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 150µA
2.5
T J = -40°C
TJ = 25°C
TJ = 175°C
100
10
VGS = 0V
1.0
1.5
-75 -50 -25
0
0.2
25 50 75 100 125 150 175
Fig 7. Typical Threshold Voltage vs. Junction Temperature
300
0.8
1.0
1.2
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
250
T J = 25°C
C oss = C ds + C gd
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
0.6
VSD, Source-to-Drain Voltage (V)
T J , Temperature ( °C )
200
150
T J = 175°C
100
10000
Ciss
Coss
1000
Crss
V DS = 10V
50
380µs PULSE WIDTH
0
100
0
20
40
60
80
100 120 140 160
1
ID,Drain-to-Source Current (A)
12
160
VDS= 32V
VDS= 20V
VDS= 8V
140
ID, Drain Current (A)
10
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14
ID= 94A
10
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Forward Transconductance Vs. Drain Current
VGS, Gate-to-Source Voltage (V)
0.4
8
6
4
2
120
100
80
60
40
20
0
0
0
25
50
75
100
125
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
T C , Case Temperature (°C)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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5
AUIRF7737L2TR/TR1
EAS , Single Pulse Avalanche Energy (mJ)
450
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
100µsec
100
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.10
1
10
ID
13A
24A
BOTTOM 94A
400
TOP
350
300
250
200
150
100
50
0
100
25
VDS, Drain-to-Source Voltage (V)
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.02
0.01
0.05
τJ
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
0.0001
τ3
τ3
τ4
τ4
τ
τi (sec)
0.00501
18.81575
0.93035
0.022853
0.17759
0.000126
0.68769
0.00313
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
ID, Drain-to-Source Current (A)
10000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
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AUIRF7737L2TR/TR1
EAR , Avalanche Energy (mJ)
120
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 94A
100
80
60
40
20
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 15)
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy Vs. Temperature
V(BR)DSS
15V
tp
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
- VDD
IAS
tp
A
0.01Ω
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
VCC
DUT
0
20K
1K
Vgs
S
Vgs(th)
Fig 19a. Gate Charge Test Circuit
VDS
VGS
RG
Qgodr
RD
Qgd
Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
D.U.T.
VDS
+
-
V DD
90%
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
VGS
td(on)
Fig 20a. Switching Time Test Circuit
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tr
t d(off)
tf
Fig 20b. Switching Time Waveforms
7
AUIRF7737L2TR/TR1
Automotive DirectFET® Board Footprint, L6 (Large Size Can).
Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
S
D
8
S
G
D
S
D
S
S
S
D
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AUIRF7737L2TR/TR1
Automotive DirectFET® Outline Dimension, L6 Outline (LargeSize Can).
Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
CODE MIN MAX
A
9.05 9.15
B
6.85 7.10
C
5.90 6.00
D
0.55 0.65
E
0.58 0.62
F
1.18 1.22
0.98 1.02
G
0.73 0.77
H
J
0.38 0.42
K
1.35 1.45
2.55 2.65
L
L1
3.95 4.05
L2
5.35 5.45
M
0.68 0.74
P
0.09 0.17
R
0.02 0.08
IMPERIAL
MAX
MIN
0.360
0.356
0.280
0.270
0.236
0.232
0.026
0.022
0.024
0.023
0.048
0.046
0.039
0.040
0.029
0.030
0.017
0.015
0.057
0.053
0.104
0.100
0.155
0.159
0.210
0.214
0.029
0.027
0.007
0.003
0.003
0.001
Automotive DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF7737L2TR/TR1
Automotive DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as AUIRF7737L2TR). For 1000 parts on 7"
reel, order AUIRF7737L2TR1
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MIN
MAX
MAX
4.69
0.476
12.10
11.90
0.154
4.10
3.90
0.161
0.623
15.90
0.642
16.30
0.291
0.299
7.60
7.40
0.283
7.20
0.291
7.40
0.390
0.398
10.10
9.90
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
REEL DIMENSIONS
TR1 OPTION (QTY 1000)
STANDARD OPTION (QTY 4000)
METRIC
METRIC
IMPERIAL
IMPERIAL
MIN
MAX
CODE
MIN
MIN
MAX
MAX
MAX
MIN
7.000
N.C
A
12.992
330.00
N.C
N.C
N.C
177.80
0.795
0.795
N.C
B
20.20
N.C
N.C
N.C
20.20
0.331
C
0.504
12.80
0.520
0.50
12.98
13.20
13.50
0.059
N.C
D
0.059
1.50
N.C
1.50
N.C
2.50
2.460
E
3.900
N.C
99.00 100.00
3.940
62.48
N.C
N.C
F
N.C
N.C
0.53
N.C
22.40
0.880
N.C
G
N.C
0.650
16.40
0.720
N.C
N.C
18.40
N.C
H
0.630
0.630
15.90
0.760
N.C
16.00
19.40
N.C
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
10
Starting TJ = 25°C, L = 0.024mH, RG = 50Ω, IAS = 94A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
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AUIRF7737L2TR/TR1
IMPORTANT NOTICE
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right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty.
Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
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or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could
create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is
solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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