ASI MRF429 Npn silicon rf power transistor Datasheet

MRF429
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF429 is Designed for
High voltage applications up tp 30
MHz
PACKAGE STYLE .500 4L FLG
.112x45°
FEATURES:
L
A
C
E
FULL R
• PG = 13 dB min. at 150 W/30 MHz
• IMD3 = -32 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
Ø.125 NOM.
C
B
B
E
H
E
D
G
F
MAXIMUM RATINGS
I J
IC
16 A
VCBO
K
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
100 V
A
.220 / 5.59
.230 / 5.84
VCEO
50 V
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
VEBO
4.0 V
E
PDISS
TJ
.125 / 3.18
B
233 W @ TC = 25 °C
-65°C to +200 °C
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
TSTG
-65 °C to +150 °C
θJC
0.75 °C/W
CHARACTERISTICS
SYMBOL
L
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
100
V
BVCES
IC = 100 mA
100
V
BVCEO
IC = 200 mA
50
V
BVEBO
IE = 10 mA
4.0
V
hFE
VCE = 5.0 V
Cob
VCB = 50 V
f = 1.0 MHz
GP
IMD
ηC
VCE = 50 V
ICQ = 3.3 A
POUT = 150 W (PEP)
f = 30 MHz
IC = 5.0 A
10
220
13
---
300
pF
-32
dB
dBc
%
15
-35
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
80
REV. A
1/1
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