AMD AM29LV320DT50WMD 32 megabit (4 m x 8-bit/2 m x 16-bit) cmos 3.0 volt-only, boot sector flash memory Datasheet

Am29LV320D
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not available for designs. For new and current designs,
S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please refer
to the S29AL032D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
April 2005
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that
originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 23579
Revision C
Amendment 8
Issue Date December 14, 2005
THIS PAGE LEFT INTENTIONALLY BLANK.
Am29LV320D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
This product has been retired and is not available for designs. For new and current designs, S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please
refer to the S29AL032D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
„ Secured Silicon
— 64 Kbyte Sector Size; Replacement/substitute
devices (such as Mirrorbit™) have 256 bytes.
— Factory locked and identifiable: 16 bytes (8 words)
available for secure, random factory Electronic Serial
Number; verifiable as factory locked through
autoselect function. ExpressFlash option allows
entire sector to be available for factory-secured data
— Customer lockable: Can be programmed once and
then permanently locked after being shipped from
AMD
„ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
„ Package options
— 48-pin TSOP
— 48-ball FBGA
„ Sector Architecture
— Eight 8 Kbyte sectors
— Sixty-three 64 Kbyte sectors
„ Top or bottom boot block
„ Manufactured on 0.23 µm process technology
„ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
„ High performance
— Access time as fast 90 ns
— Program time: 7µs/word typical utilizing Accelerate
function
„ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
„ Minimum 1 million erase cycles guaranteed per
sector
„ 20 Year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
„ Supports Common Flash Memory Interface (CFI)
„ Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
non-suspended sectors
„ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
„ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
„ Any combination of sectors can be erased
„ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
„ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
„ WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function provides accelerated
program times
„ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 23579
Rev: C Amendment/8
Issue Date: December 14, 2005
Refer to AMD’s Website (www.amd.com) for the latest information.
D A T A S H E E T
GENERAL DESCRIPTION
The Am29LV320D is a 32 megabit, 3.0 volt-only flash
memory device, organized as 2,097,152 words of 16
bits each or 4,194,304 bytes of 8 bits each. Word
mode data appears on DQ0–DQ15; byte mode data
appears on DQ0–DQ7. The device is designed to be
programmed in-system with the standard 3.0 volt VCC
supply, and can also be programmed in standard
EPROM programmers.
The device is available with an access time of 90 or
120 ns. The devices are offered in 48-pin TSOP and
48-ball FBGA packages. Standard control pins—chip
enable (CE#), write enable (WE#), and output enable
(OE#)—control normal read and write operations, and
avoid bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
Am29LV320D Features
The Secured Silicon sector is an extra sector capable of being permanently locked by AMD or customers. The Secured Silicon Indicator Bit (DQ7) is
permanently set to a 1 if the part is factory locked,
and set to a 0 if customer lockable. This way, customer lockable parts can never be used to replace a
factory locked part. Note that the Am29LV320D has
a Secured Silicon sector size of 64 Kbytes. AMD
devices designated as replacements or substitutes, such as the Am29LV320M, have 256 bytes.
This should be considered during system design.
Factory locked parts provide several options. The Secured Silicon sector may store a secure, random 16
byte ESN (Electronic Serial Number), customer code
(programmed through AMD’s ExpressFlash service),
2
or both. Customer Lockable parts may utilize the Secured Silicon sector as bonus space, reading and writing like any other flash sector, or may permanently
lock their own code there.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
is completed, the device automatically returns to the
read mode.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The device offers two power-saving features. When
addresses are stable for a specified amount of time,
the device enters the automatic sleep mode. The
system can also place the device into the standby
mode. Power consumption is greatly reduced in both
modes.
Am29LV320D
December 14, 2005
D A T A S H E E T
TABLE OF CONTENTS
Continuity of Specifications ....................................................... i
For More Information ................................................................. i
Distinctive Characteristics . . . . . . . . . . . . . . . . . . 1
ARCHITECTURAL ADVANTAGES ...................................... 1
PERFORMANCE CHARACTERISTICS ............................... 1
SOFTWARE FEATURES ..................................................... 1
HARDWARE FEATURES .................................................... 1
General Description . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 6
Special Package Handling Instructions .................................... 7
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Am29LV320D Device Bus Operations ..............................10
Word/Byte Configuration ........................................................ 11
Requirements for Reading Array Data ................................... 11
Writing Commands/Command Sequences ............................ 11
Accelerated Program Operation .......................................... 11
Autoselect Functions ........................................................... 11
Standby Mode ........................................................................ 12
Automatic Sleep Mode ........................................................... 12
RESET#: Hardware Reset Pin ............................................... 12
Output Disable Mode .............................................................. 12
Table 2. Top Boot Sector Addresses (Am29LV320DT) ..................13
Table 3. Top Boot Secured Silicon Sector Addresses ................... 14
Table 4. Bottom Boot Sector Addresses (Am29LV320DB) .............14
Table 5. Bottom Boot Secured Silicon Sector Addresses .............. 15
Autoselect Mode ..................................................................... 16
Table 6. Autoselect Codes (High Voltage Method) ........................16
Sector/Sector Block Protection and Unprotection .................. 17
Table 7. Top Boot Sector/Sector Block Addresses
for Protection/Unprotection .............................................................17
Table 8. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection ...........................................17
Write Protect (WP#) ................................................................ 18
Temporary Sector Unprotect .................................................. 18
Figure 1. Temporary Sector Unprotect Operation........................... 18
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 19
Secured Silicon Sector Flash Memory Region ....................... 20
Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory ............................................... 20
Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected at the Factory .................................................. 20
Figure 3. Secured Silicon Sector Protect Verify .............................. 21
Hardware Data Protection ...................................................... 21
Low VCC Write Inhibit ......................................................... 21
Write Pulse “Glitch” Protection ............................................ 21
Logical Inhibit ...................................................................... 21
Power-Up Write Inhibit ......................................................... 21
Common Flash Memory Interface (CFI) . . . . . . . 21
Reset Command ..................................................................... 25
Autoselect Command Sequence ............................................ 25
Table 13. Autoselect Codes ........................................................... 25
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence .............................................................. 25
Byte/Word Program Command Sequence ............................. 26
Unlock Bypass Command Sequence .................................. 26
Figure 4. Program Operation ......................................................... 27
Chip Erase Command Sequence ........................................... 27
Sector Erase Command Sequence ........................................ 27
Erase Suspend/Erase Resume Commands ........................... 28
Figure 5. Erase Operation.............................................................. 28
Command Definitions ............................................................. 29
Table 14. Am29LV320D Command Definitions ............................. 29
Write Operation Status . . . . . . . . . . . . . . . . . . . . 30
DQ7: Data# Polling ................................................................. 30
Figure 6. Data# Polling Algorithm .................................................. 30
RY/BY#: Ready/Busy# ............................................................ 31
DQ6: Toggle Bit I .................................................................... 31
Figure 7. Toggle Bit Algorithm........................................................ 31
DQ2: Toggle Bit II ................................................................... 31
Reading Toggle Bits DQ6/DQ2 ............................................... 32
DQ5: Exceeded Timing Limits ................................................ 32
DQ3: Sector Erase Timer ....................................................... 32
Table 15. Write Operation Status ................................................... 33
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 34
Figure 8. Maximum Negative Overshoot Waveform ...................... 34
Figure 9. Maximum Positive Overshoot Waveform........................ 34
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 34
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 35
CMOS Compatible .................................................................. 35
Zero-Power Flash ................................................................. 36
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 36
Figure 11. Typical ICC1 vs. Frequency ............................................ 36
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 12. Test Setup.................................................................... 37
Table 16. Test Specifications ......................................................... 37
Figure 13. Input Waveforms and Measurement Levels ................. 37
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38
Read-Only Operations ........................................................... 38
Figure 14. Read Operation Timings ............................................... 38
Hardware Reset (RESET#) .................................................... 39
Figure 15. Reset Timings ............................................................... 39
Word/Byte Configuration (BYTE#) ............................................. 40
Figure 16. BYTE# Timings for Read Operations............................ 40
Figure 17. BYTE# Timings for Write Operations............................ 40
Erase and Program Operations ................................................. 41
Figure 18. Program Operation Timings..........................................
Figure 19. Chip/Sector Erase Operation Timings ..........................
Figure 20. Data# Polling Timings (During Embedded Algorithms).
Figure 21. Toggle Bit Timings (During Embedded Algorithms)......
Figure 22. DQ2 vs. DQ6.................................................................
42
43
44
45
45
Temporary Sector Unprotect ..................................................... 46
Table 9. CFI Query Identification String .......................................... 22
Table 10. System Interface String................................................... 22
Table 11. Device Geometry Definition ............................................ 23
Table 12. Primary Vendor-Specific Extended Query ...................... 24
Figure 23. Temporary Sector Unprotect Timing Diagram .............. 46
Figure 24. Accelerated Program Timing Diagram.......................... 46
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 47
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25
Reading Array Data ................................................................ 25
Alternate CE# Controlled Erase and Program Operations ........ 48
December 14, 2005
Figure 26. Alternate CE# Controlled Write
Am29LV320D
3
D A T A S H E E T
(Erase/Program) Operation Timings ............................................... 49
Erase And Programming Performance . . . . . . . . 50
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 50
TSOP and BGA Package Capacitance . . . . . . . 50
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 51
FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA)
6 x 12 mm package ................................................................... 51
TS 048—48-Pin Standard TSOP ............................................... 52
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53
Ordering Information ............................................................ 53
Connection Diagrams .......................................................... 53
Global .................................................................................. 53
Table 3, Top Boot Secured Silicon Sector Addresses ......... 53
Sector/Sector Block Protection and Unprotection ............... 53
Secured Silicon Sector Flash Memory Region .................... 53
Global .................................................................................. 53
Ordering Information ............................................................ 53
Table 1, Am29LV320D Device Bus Operations ................... 53
Secured Silicon Sector Flash Memory Region .................... 53
Autoselect Command Sequence ......................................... 53
Table 14, Am29LV320D Command Definitions ................... 53
Erase and Program Operations table .................................. 53
Figure 3, Secured Silicon Sector Protect Verify ................... 53
Distinctive Characteristics ................................................... 53
Connection Diagrams .......................................................... 53
4
Ordering Information ............................................................ 53
Secured Silicon Flash Memory Region ............................... 53
Command Definitions .......................................................... 53
AC Characteristics ............................................................... 53
DC Characteristics ............................................................... 53
TSOP, SO, and BGA Package Capacitance ....................... 53
Distinctive Characteristics ................................................... 53
Secured Silicon Flash Memory Region ............................... 53
Command Definitions .......................................................... 54
Erase and Programming Performance ................................ 54
Distinctive Characteristics ................................................... 54
Secured Silicon Sector ........................................................ 54
Valid Combinations .............................................................. 54
Command Definitions .......................................................... 54
Ordering Information ............................................................ 54
Product Selector Guide ....................................................... 54
Global .................................................................................. 54
Ordering Information ............................................................ 54
Erase and Programming Performance ................................ 54
AC Characteristics ............................................................... 54
Erase and Program Operations ........................................... 54
Alternate CE# Control Erase and Program Operations ....... 54
Command Definitions .......................................................... 54
Global .................................................................................. 54
Common Flash Memory Interfacte (CFI) ............................. 54
Global .................................................................................. 54
Am29LV320D
December 14, 2005
D A T A S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV320D
Standard Voltage Range: VCC = 2.7–3.6 V
90R Standard Voltage Range: VCC = 3.0–3.6 V
Speed Option
90
120
Max Access Time (ns)
90
120
CE# Access (ns)
90
120
OE# Access (ns)
40
50
BLOCK DIAGRAM
VCC
DQ0–DQ15 (A-1)
RY/BY#
Sector Switches
VSS
Erase Voltage
Generator
RESET#
Input/Output
Buffers
State
Control
WE#
BYTE#
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
A0–A20
December 14, 2005
Timer
Address Latch
STB
Am29LV320D
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
5
D A T A S H E E T
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
NC
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-Pin Standard TSOP
Am29LV320D
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
December 14, 2005
D A T A S H E E T
CONNECTION DIAGRAMS
48-Ball FBGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
F6
G6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
BYTE# DQ15/A-1
H6
VSS
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
A19
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
OE#
VSS
A3
A4
A2
A1
A0
CE#
Special Package Handling Instructions
Special handling is required for Flash Memory products in molded (TSOP, BGA) packages.
The package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
December 14, 2005
Am29LV320D
7
D A T A S H E E T
PIN DESCRIPTION
A0–A20
LOGIC SYMBOL
= 21 Addresses
21
DQ0–DQ14 = 15 Data Inputs/Outputs
A0–A20
DQ15/A-1
= DQ15 (Data Input/Output, word
mode), A-1 (LSB Address Input, byte
mode)
CE#
= Chip Enable
OE#
= Output Enable
WE#
= Write Enable
WP#/ACC
= Hardware Write Protect/
Acceleration Pin
RESET#
RESET#
= Hardware Reset Pin, Active Low
BYTE#
BYTE#
= Selects 8-bit or 16-bit mode
RY/BY#
= Ready/Busy Output
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
VSS
= Device Ground
NC
= Pin Not Connected Internally
8
16 or 8
DQ0–DQ15
(A-1)
CE#
OE#
WE#
WP#/ACC
Am29LV320D
RY/BY#
December 14, 2005
D A T A S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid
Combination) is formed by a combination of the following:
Am29LV320D
T
90
E
C
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
F
= Industrial (–40°C to +85°C) with Pb-free package
C
= Commercial (0°C to +70°C)
D
= Commercial (0°C to +70°C) with Pb-free package
V
= Automotive In-Cabin (-40°C to +105°C)
Y
= Automotive In-Cabin (-40°C to +105°C) with Pb-free package
PACKAGE TYPE
E
= 48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 048)
WM = 48-ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 12 mm package (FBD048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
= Top boot sector
B
= Bottom boot sector
DEVICE NUMBER/DESCRIPTION
Am29LV320D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS Boot Sector Flash Memory
3.0 Volt-only Read, Program and Erase
Valid Combinations for TSOP
Packages
AM29LV320DT90R,
AM29LV320DB90R
EC, EI,
Am29LV320DT90,
ED, EF
Am29LV320DB90
AM29LV320DT120,
AM29LV320DB120
Am29LV320DT120
EV, EY
Am29LV320DB120
Speed
(Ns)
VCC
Range
90
3.0– 3.6V
AM29LV320DT90,
AM29LV320DB90
90
2.7– 3.6V
AM29LV320DT120,
AM29LV320DB120
120
2.7– 3.6V
Am29LV320DT120
Am29LV320DB120
120
2.7 – 3,6V
Valid Combinations for FBGA Packages
Order Number
Package Marking
WMC,
WMI,
WMD,
WMF
WNV
L320DT90V,
L320DB90V
L320DT12V,
L320DB12V
L320DT12V
L320DB12V
C, I,
D, F
V, Y
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
December 14, 2005
Am29LV320D
9
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am29LV320D Device Bus Operations
DQ8–DQ15
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 2)
DQ0–
DQ7
BYTE#
= VIH
Read
L
L
H
H
L/H
AIN
DOUT
DOUT
Write
L
H
L
H
(Note 3)
AIN
(Note 4) (Note 4)
Accelerated Program
L
H
L
H
VHH
AIN
(Note 4) (Note 4)
VCC ±
0.3 V
X
X
VCC ±
0.3 V
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
L/H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
L/H
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
L/H
SA, A6 = L,
(Note 4)
A1 = H, A0 = L
X
X
Sector Unprotect
(Note 2)
L
H
L
VID
(Note 3)
SA, A6 = H,
(Note 4)
A1 = H, A0 = L
X
X
Temporary Sector
Unprotect
X
X
X
VID
(Note 3)
Operation
Standby
AIN
(Note 4) (Note 4)
BYTE#
= VIL
DQ8–DQ14
= High-Z,
DQ15 = A-1
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See “Sector/Sector
Block Protection and Unprotection” on page 17.
3. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection” on page 17. If WP#/ACC = VHH, all sectors are unprotected.
4. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm.
10
Am29LV320D
December 14, 2005
D A T A S H E E T
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0–DQ15 are active and controlled by
CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at V IH . The BYTE# pin determines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Requirements for Reading Array Data” on
page 11 for more infor mation. Refer to the AC
Read-Only Operations table for timing specifications
and to Figure 14, on page 38 for the timing diagram.
ICC1 in the DC Characteristics table represents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” on page 11
for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
December 14, 2005
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The
“Word/Byte Configuration” on page 11 section contains details on programming data to the device using
both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 on page 13 through
Table 5 on page 15 indicate the address space that
each sector occupies. A “sector address” is the address bits required to uniquely select a sector.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC
Characteristics” on page 38 section contains timing
specification tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not be
at VHH for operations other than accelerated programming, or device damage may result. In addition, the
WP#/ACC pin must not be left floating or unconnected;
inconsistent behavior of the device may result.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the “Autoselect Mode” on page 16
and “Autoselect Command Sequence” on page 25
sections for more information.
ICC6 and ICC7 in the DC Characteristics table represent
the current specifications for read-while-program and
read-while-erase, respectively.
Am29LV320D
11
D A T A S H E E T
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device is in the standby mode, but the
standby current is greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
I CC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC +
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
ICC4 in the “DC Characteristics” on page 35 table represents the automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RE-
12
SET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current is
greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t READY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 15, on page 39 for the timing
diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Am29LV320D
December 14, 2005
D A T A S H E E T
Table 2.
Top Boot Sector Addresses (Am29LV320DT) (Sheet 1 of 2)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA0
000000xxx
64/32
000000h–00FFFFh
000000h–07FFFh
SA1
000001xxx
64/32
010000h–01FFFFh
008000h–0FFFFh
SA2
000010xxx
64/32
020000h–02FFFFh
010000h–17FFFh
SA3
000011xxx
64/32
030000h–03FFFFh
018000h–01FFFFh
SA4
000100xxx
64/32
040000h–04FFFFh
020000h–027FFFh
SA5
000101xxx
64/32
050000h–05FFFFh
028000h–02FFFFh
SA6
000110xxx
64/32
060000h–06FFFFh
030000h–037FFFh
SA7
000111xxx
64/32
070000h–07FFFFh
038000h–03FFFFh
SA8
001000xxx
64/32
080000h–08FFFFh
040000h–047FFFh
SA9
001001xxx
64/32
090000h–09FFFFh
048000h–04FFFFh
SA10
001010xxx
64/32
0A0000h–0AFFFFh
050000h–057FFFh
SA11
001011xxx
64/32
0B0000h–0BFFFFh
058000h–05FFFFh
SA12
001100xxx
64/32
0C0000h–0CFFFFh
060000h–067FFFh
SA13
001101xxx
64/32
0D0000h–0DFFFFh
068000h–06FFFFh
SA14
001110xxx
64/32
0E0000h–0EFFFFh
070000h–077FFFh
SA15
001111xxx
64/32
0F0000h–0FFFFFh
078000h–07FFFFh
SA16
010000xxx
64/32
100000h–10FFFFh
080000h–087FFFh
SA17
010001xxx
64/32
110000h–11FFFFh
088000h–08FFFFh
SA18
010010xxx
64/32
120000h–12FFFFh
090000h–097FFFh
SA19
010011xxx
64/32
130000h–13FFFFh
098000h–09FFFFh
SA20
010100xxx
64/32
140000h–14FFFFh
0A0000h–0A7FFFh
SA21
010101xxx
64/32
150000h–15FFFFh
0A8000h–0AFFFFh
SA22
010110xxx
64/32
160000h–16FFFFh
0B0000h–0B7FFFh
SA23
010111xxx
64/32
170000h–17FFFFh
0B8000h–0BFFFFh
SA24
011000xxx
64/32
180000h–18FFFFh
0C0000h–0C7FFFh
SA25
011001xxx
64/32
190000h–19FFFFh
0C8000h–0CFFFFh
SA26
011010xxx
64/32
1A0000h–1AFFFFh
0D0000h–0D7FFFh
SA27
011011xxx
64/32
1B0000h–1BFFFFh
0D8000h–0DFFFFh
SA28
011100xxx
64/32
1C0000h–1CFFFFh
0E0000h–0E7FFFh
SA29
011101xxx
64/32
1D0000h–1DFFFFh
0E8000h–0EFFFFh
SA30
011110xxx
64/32
1E0000h–1EFFFFh
0F0000h–0F7FFFh
SA31
011111xxx
64/32
1F0000h–1FFFFFh
0F8000h–0FFFFFh
SA32
100000xxx
64/32
200000h–20FFFFh
100000h–107FFFh
SA33
100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA34
100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA35
100011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA36
100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA37
100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA38
100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA39
100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA40
101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA41
101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA42
101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA43
101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA44
101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA45
101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA46
101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA47
101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA48
110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA49
110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA50
110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA51
110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA52
110100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
December 14, 2005
Am29LV320D
13
D A T A S H E E T
Table 2.
Top Boot Sector Addresses (Am29LV320DT) (Sheet 2 of 2)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA53
110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA54
110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA55
110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA56
111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA57
111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA58
111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA59
111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA60
111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA61
111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA62
111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA63
111111000
8/4
3F0000h–3F1FFFh
1F8000h–1F8FFFh
SA64
111111001
8/4
3F2000h–3F3FFFh
1F9000h–1F9FFFh
SA65
111111010
8/4
3F4000h–3F5FFFh
1FA000h–1FAFFFh
SA66
111111011
8/4
3F6000h–3F7FFFh
1FB000h–1FBFFFh
SA67
111111100
8/4
3F8000h–3F9FFFh
1FC000h–1FCFFFh
SA68
111111101
8/4
3FA000h–3FBFFFh
1FD000h–1FDFFFh
SA69
111111110
8/4
3FC000h–3FDFFFh
1FE000h–1FEFFFh
SA70
111111111
8/4
3FE000h–3FFFFFh
1FF000h–1FFFFFh
Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
Table 3.
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
111111xxx
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
Table 4.
14
Top Boot Secured Silicon Sector Addresses
Bottom Boot Sector Addresses (Am29LV320DB) (Sheet 1 of 2)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA0
000000000
8/4
000000h-001FFFh
000000h–000FFFh
SA1
000000001
8/4
002000h-003FFFh
001000h–001FFFh
SA2
000000010
8/4
004000h-005FFFh
002000h–002FFFh
SA3
000000011
8/4
006000h-007FFFh
003000h–003FFFh
SA4
000000100
8/4
008000h-009FFFh
004000h–004FFFh
SA5
000000101
8/4
00A000h-00BFFFh
005000h–005FFFh
SA6
000000110
8/4
00C000h-00DFFFh
006000h–006FFFh
SA7
000000111
8/4
00E000h-00FFFFh
007000h–007FFFh
SA8
000001xxx
64/32
010000h-01FFFFh
008000h–00FFFFh
SA9
000010xxx
64/32
020000h-02FFFFh
010000h–017FFFh
SA10
000011xxx
64/32
030000h-03FFFFh
018000h–01FFFFh
SA11
000100xxx
64/32
040000h-04FFFFh
020000h–027FFFh
SA12
000101xxx
64/32
050000h-05FFFFh
028000h–02FFFFh
SA13
000110xxx
64/32
060000h-06FFFFh
030000h–037FFFh
SA14
000111xxx
64/32
070000h-07FFFFh
038000h–03FFFFh
SA15
001000xxx
64/32
080000h-08FFFFh
040000h–047FFFh
SA16
001001xxx
64/32
090000h-09FFFFh
048000h–04FFFFh
SA17
001010xxx
64/32
0A0000h-0AFFFFh
050000h–057FFFh
SA18
001011xxx
64/32
0B0000h-0BFFFFh
058000h–05FFFFh
SA19
001100xxx
64/32
0C0000h-0CFFFFh
060000h–067FFFh
SA20
001101xxx
64/32
0D0000h-0DFFFFh
068000h–06FFFFh
SA21
001110xxx
64/32
0E0000h-0EFFFFh
070000h–077FFFh
SA22
001111xxx
64/32
0F0000h-0FFFFFh
078000h–07FFFFh
SA23
010000xxx
64/32
100000h-10FFFFh
080000h–087FFFh
SA24
010001xxx
64/32
110000h-11FFFFh
088000h–08FFFFh
SA25
010010xxx
64/32
120000h-12FFFFh
090000h–097FFFh
SA26
010011xxx
64/32
130000h-13FFFFh
098000h–09FFFFh
SA27
010100xxx
64/32
140000h-14FFFFh
0A0000h–0A7FFFh
SA28
010101xxx
64/32
150000h-15FFFFh
0A8000h–0AFFFFh
SA29
010110xxx
64/32
160000h-16FFFFh
0B0000h–0B7FFFh
Am29LV320D
December 14, 2005
D A T A S H E E T
Table 4.
Bottom Boot Sector Addresses (Am29LV320DB) (Sheet 2 of 2)
Sector
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA30
010111xxx
64/32
170000h-17FFFFh
0B8000h–0BFFFFh
SA31
011000xxx
64/32
180000h-18FFFFh
0C0000h–0C7FFFh
SA32
011001xxx
64/32
190000h-19FFFFh
0C8000h–0CFFFFh
SA33
011010xxx
64/32
1A0000h-1AFFFFh
0D0000h–0D7FFFh
SA34
011011xxx
64/32
1B0000h-1BFFFFh
0D8000h–0DFFFFh
SA35
011100xxx
64/32
1C0000h-1CFFFFh
0E0000h–0E7FFFh
SA36
011101xxx
64/32
1D0000h-1DFFFFh
0E8000h–0EFFFFh
SA37
011110xxx
64/32
1E0000h-1EFFFFh
0F0000h–0F7FFFh
SA38
011111xxx
64/32
1F0000h-1FFFFFh
0F8000h–0FFFFFh
SA39
100000xxx
64/32
200000h-20FFFFh
100000h–107FFFh
SA40
100001xxx
64/32
210000h-21FFFFh
108000h–10FFFFh
SA41
100010xxx
64/32
220000h-22FFFFh
110000h–117FFFh
SA42
100011xxx
64/32
230000h-23FFFFh
118000h–11FFFFh
SA43
100100xxx
64/32
240000h-24FFFFh
120000h–127FFFh
SA44
100101xxx
64/32
250000h-25FFFFh
128000h–12FFFFh
SA45
100110xxx
64/32
260000h-26FFFFh
130000h–137FFFh
SA46
100111xxx
64/32
270000h-27FFFFh
138000h–13FFFFh
SA47
101000xxx
64/32
280000h-28FFFFh
140000h–147FFFh
SA48
101001xxx
64/32
290000h-29FFFFh
148000h–14FFFFh
SA49
101010xxx
64/32
2A0000h-2AFFFFh
150000h–157FFFh
SA50
101011xxx
64/32
2B0000h-2BFFFFh
158000h–15FFFFh
SA51
101100xxx
64/32
2C0000h-2CFFFFh
160000h–167FFFh
SA52
101101xxx
64/32
2D0000h-2DFFFFh
168000h–16FFFFh
SA53
101110xxx
64/32
2E0000h-2EFFFFh
170000h–177FFFh
SA54
101111xxx
64/32
2F0000h-2FFFFFh
178000h–17FFFFh
SA55
111000xxx
64/32
300000h-30FFFFh
180000h–187FFFh
SA56
110001xxx
64/32
310000h-31FFFFh
188000h–18FFFFh
SA57
110010xxx
64/32
320000h-32FFFFh
190000h–197FFFh
SA58
110011xxx
64/32
330000h-33FFFFh
198000h–19FFFFh
SA59
110100xxx
64/32
340000h-34FFFFh
1A0000h–1A7FFFh
SA60
110101xxx
64/32
350000h-35FFFFh
1A8000h–1AFFFFh
SA61
110110xxx
64/32
360000h-36FFFFh
1B0000h–1B7FFFh
SA62
110111xxx
64/32
370000h-37FFFFh
1B8000h–1BFFFFh
SA63
111000xxx
64/32
380000h-38FFFFh
1C0000h–1C7FFFh
SA64
111001xxx
64/32
390000h-39FFFFh
1C8000h–1CFFFFh
SA65
111010xxx
64/32
3A0000h-3AFFFFh
1D0000h–1D7FFFh
SA66
111011xxx
64/32
3B0000h-3BFFFFh
1D8000h–1DFFFFh
SA67
111100xxx
64/32
3C0000h-3CFFFFh
1E0000h–1E7FFFh
SA68
111101xxx
64/32
3D0000h-3DFFFFh
1E8000h–1EFFFFh
SA69
111110xxx
64/32
3E0000h-3EFFFFh
1F0000h–1F7FFFh
SA70
111111xxx
64/32
3F0000h-3FFFFFh
1F8000h–1FFFFFh
Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH).
Table 5.
Bottom Boot Secured Silicon Sector Addresses
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
000000xxx
64/32
000000h-00FFFFh
00000h-07FFFh
December 14, 2005
Am29LV320D
15
D A T A S H E E T
Autoselect Mode
protection, the sector address must appear on the appropriate highest order address bits (see Table 2 on
page 13 through Table 5 on page 15). Table 6 on
page 16 shows the remaining address bits that are
don’t care. When all necessary bits are set as required, the programming equipment may then read the
corresponding identifier code on DQ7–DQ0.
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 14 on page 29.
This method does not require VID. Refer to the “Autoselect Command Sequence” on page 25 section for
more information.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Table 6 on page 16. In addition, when verifying sector
Table 6.
Autoselect Codes (High Voltage Method)
DQ8 to DQ15
CE#
OE#
WE#
A20
to
A12
Manufacturer ID: AMD
L
L
H
X
X
VID
X
L
X
L
L
X
X
01h
Device ID: Am29LV320D
L
L
H
X
X
VID
X
L
X
L
H
22h
X
F6 (T), F9h (B)
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
X
X
01h (protected),
00h (unprotected)
Secured Silicon Sector
Indicator Bit (DQ7)
L
L
H
X
X
VID
X
L
X
H
H
X
X
99h (factory locked),
19h (not factory locked)
Description
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
BYTE#=
VIH
BYTE#
= VIL
DQ7
to
DQ0
Legend: T = Top Boot Block, B = Bottom Boot Block, L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t
care.
16
Am29LV320D
December 14, 2005
D A T A S H E E T
Sector/Sector Block Protection and
Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see
Table 7 on page 17 and Table 8 on page 17).
Table 7.
Top Boot Sector/Sector Block Addresses
for Protection/Unprotection
Sector / Sector
Block
SA0-SA3
A20–A12
000000XXX,
000001XXX,
000010XXX
000011XXX
Sector / Sector
Block
A20–A12
Sector/Sector Block Size
SA62-SA59
1101XXXXX
256 (4x64) Kbytes
SA58-SA55
1100XXXXX
256 (4x64) Kbytes
SA54-SA51
1011XXXXX
256 (4x64) Kbytes
SA50-SA47
1010XXXXX
256 (4x64) Kbytes
SA46-SA43
1001XXXXX
256 (4x64) Kbytes
SA42-SA39
1000XXXXX
256 (4x64) Kbytes
SA38-SA35
0111XXXXX
256 (4x64) Kbytes
SA34-SA31
0110XXXXX
256 (4x64) Kbytes
SA30-SA27
0101XXXXX
256 (4x64) Kbytes
SA26-SA23
0100XXXXX
256 (4x64) Kbytes
SA22–SA19
0011XXXXX
256 (4x64) Kbytes
SA18-SA15
0010XXXXX
256 (4x64) Kbytes
SA14-SA11
0001XXXXX
256 (4x64) Kbytes
SA10-SA8
000011XXX,
000010XXX,
000001XXX
192 (3x64) Kbytes
SA7
000000111
8 Kbytes
SA6
000000110
8 Kbytes
SA5
000000101
8 Kbytes
000000100
8 Kbytes
Sector/Sector Block Size
256 (4x64) Kbytes
SA4-SA7
0001XXXXX
256 (4x64) Kbytes
SA4
SA8-SA11
0010XXXXX
256 (4x64) Kbytes
SA3
000000011
8 Kbytes
SA12-SA15
0011XXXXX
256 (4x64) Kbytes
SA2
000000010
8 Kbytes
SA16-SA19
0100XXXXX
256 (4x64) Kbytes
SA1
000000001
8 Kbytes
SA0
000000000
8 Kbytes
SA20-SA23
0101XXXXX
256 (4x64) Kbytes
SA24-SA27
0110XXXXX
256 (4x64) Kbytes
SA28-SA31
0111XXXXX
256 (4x64) Kbytes
SA32-SA35
1000XXXXX
256 (4x64) Kbytes
SA36-SA39
1001XXXXX
256 (4x64) Kbytes
SA40-SA43
1010XXXXX
256 (4x64) Kbytes
SA44-SA47
1011XXXXX
256 (4x64) Kbytes
SA48-SA51
1100XXXXX
256 (4x64) Kbytes
SA52-SA55
1101XXXXX
256 (4x64) Kbytes
SA56-SA59
1110XXXXX
256 (4x64) Kbytes
SA60-SA62
111100XXX,
111101XXX,
111110XXX
192 (3x64) Kbytes
SA63
111111000
8 Kbytes
SA64
111111001
8 Kbytes
SA65
111111010
8 Kbytes
SA66
111111011
8 Kbytes
SA67
111111100
8 Kbytes
SA68
111111101
8 Kbytes
SA69
111111110
8 Kbytes
SA70
111111111
8 Kbytes
Sector Protection and unprotection requires VID on the
RESET# pin only, and can be implemented either
in-system or via programming equipment. Figure 2, on
page 19 shows the algorithms and Figure 25, on page
47 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected
prior to the first sector unprotect write cycle.
The sector unprotect algorithm unprotects all sectors
in parallel. All previously protected sectors must be individually re-protected. To change data in protected
sectors efficiently, the temporary sector unprotect
function is available. See “Temporary Sector Unprotect” on page 18.
The alternate method intended only for programming
equipment, and requires VID on address pin A9 and
OE#. This method is compatible with programmer routines written for earlier 3.0 volt-only AMD flash devices. For detailed information, contact an AMD
representative.
Table 8. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector / Sector
Block
SA70-SA67
SA66-SA63
December 14, 2005
A20–A12
Sector/Sector Block Size
111111XXX,
111110XXX,
111101XXX,
111100XXX
256 (4x64) Kbytes
1110XXXXX
256 (4x64) Kbytes
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” on
page 16 for details.
Am29LV320D
17
D A T A S H E E T
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting certain boot sectors without
using VID. This function is one of two provided by the
WP#/ACC pin.
erased by selecting the sector addresses. Once VID is
removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1, on page
18 shows the algorithm, and Figure 23, on page 46
shows the timing diagrams, for this feature.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two
“outermost” 8 Kbyte boot sectors independently of
whether those sectors were protected or unprotected
using the method described in “Sector/Sector Block
Protection and Unprotection” on page 17. The two outermost 8 Kbyte boot sectors are the two sectors containing
the
lowest
addresses
in
a
bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-configured
device.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8K Byte
boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for
these two sectors depends on whether they were last
protected or unprotected using the method described
in “Sector/Sector Block Protection and Unprotection”
on page 17.
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID (11.5 V – 12.5 V). During this mode,
formerly protected sectors can be programmed or
18
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
outermost boot sectors remain protected).
2. All previously protected sectors are protected once
again.
Figure 1.
Am29LV320D
Temporary Sector Unprotect Operation
December 14, 2005
D A T A S H E E T
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 μs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 μs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
PLSCNT
= 1000?
Protect another
sector?
No
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Device failed
Last sector
verified?
Write reset
command
Sector Protect
Algorithm
Sector Protect
complete
Set up
next sector
address
No
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2.
December 14, 2005
In-System Sector Protect/Unprotect Algorithms
Am29LV320D
19
D A T A S H E E T
Secured Silicon Sector Flash Memory
Region
The Secured Silicon sector provides a Flash memory
region that enables permanent part identification
through an Electronic Serial Number (ESN). The Secured Silicon sector uses a Secured Silicon Indicator
Bit (DQ7) to indicate whether or not the Secured Silicon sector is locked when shipped from the factory.
This bit is permanently set at the factory and cannot
be changed, which prevents cloning of a factory locked
part. This ensures the security of the ESN once the
product is shipped to the field. Note that the
Am29LV320D has a Secured Silicon sector size of
64 Kbytes. AMD devices designated as replacements or substitutes, such as the Am29LV320M,
have 256 bytes. This should be considered during
system design.
AMD offers the device with the Secured Silicon sector
either factory locked or customer lockable. The factory-locked version is always protected when shipped
from the factory, and has the Secured Silicon sector
Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the Secured
Silicon sector unprotected, allowing customers to utilize the that sector in any manner they choose. The
customer-lockable version has the Secured Silicon Indicator Bit permanently set to a “0.” Thus, the Secured
Silicon Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked.
The system accesses the Secured Silicon sector
through a command sequence (see “Enter Secured
Silicon Sector/Exit Secured Silicon Sector
Command Sequence” on page 25). After the system
writes the Enter Secured Silicon sector command sequence, it may read the Secured Silicon Sector by
using the addresses normally occupied by the boot
sectors. This mode of operation continues until the
system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the
device. On power-up, or following a hardware reset,
the device reverts to sending commands to the boot
sectors.
Factory Locked: Secured Silicon Sector
Programmed and Protected at the Factory
In a factory locked device, the Secured Silicon Sector
is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in
any way. The device is available preprogrammed with
one of the following:
■ A random, secure ESN only
■ Customer code through the ExpressFlash service
■ Both a random, secure ESN and customer code
through the ExpressFlash service.
20
In devices that have an ESN, a Bottom Boot device
has the 16-byte (8-word) ESN in sector 0 at addresses
00000h–0000Fh in byte mode (or 00000h–00007h in
word mode). In the Top Boot device the ESN is in sector 63 at addresses 3F0000h–3F000Fh in byte mode
(or 1F8000h–1F8007h in word mode). Note that in upcoming top boot versions of this device, the ESN is located in sector 70 at addresses 3FE000h–3FE00Fh in
byte mode (or 1FF000h–1FF007h in word mode).
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. AMD
programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s
factory with the Secured Silicon Sector permanently
locked. Contact an AMD representative for details on
using AMD’s ExpressFlash service.
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected at the Factory
The customer lockable version allows the Secured Silicon Sector to be programmed once and then permanently locked after it ships from AMD. Note that the
Am29LV320D has a Secured Silicon Sector size of
64 Kbytes. AMD devices designated as replacements or substitutes, such as the Am29LV320M,
have 256 bytes. This should be considered during
system design. Additionally, note the change in
the location of the ESN in upcoming top boot factory locked devices. Note that the accelerated programming (ACC) and unlock bypass functions are not
available when programming the Secured Silicon Sector.
The Secured Silicon Sector area can be protected
using the following procedures:
■ Write the three-cycle Enter Secured Silicon Sector
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, on
page 19, except that RESET# may be at either VIH
or VID. This allows in-system protection of the Secured Silicon Sector without raising any device pin
to a high voltage. Note that this method is only applicable to the Secured Silicon Sector.
■ To verify the protect/unprotect status of the Secured
Silicon Sector, follow the algorithm shown in Figure
3, on page 21.
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon
Sector command sequence to return to reading and
writing the remainder of the array.
The Secured Silicon Sector protection must be used
with caution since, once protected, there is no procedure available for unprotecting the Secured Silicon
Sector area and none of the bits in the Secured Silicon
Sector memory space can be modified in any way.
Am29LV320D
December 14, 2005
D A T A S H E E T
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
START
RESET# =
VIH or VID
Wait 1 μs
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
Logical Inhibit
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
Remove VIH or VID
from RESET#
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
Write reset
command
COMMON FLASH MEMORY INTERFACE
(CFI)
SecSi Sector
Protect Verify
complete
Secured Silicon Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadver tent writes (refer to Table 14 on
page 29 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or
from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
December 14, 2005
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The system can read CFI information at the addresses given
in Table 9 on page 22 through Table 12 on page 24. To
terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Table 9 on page 22
through Table 12 on page 24. The system must write
the reset command to return the device to the reading
array data.
For further information, please refer to the CFI Specification, CFI Publication 100, and the application note
“Common Flash Interface Version 1.4 Vendor Specific
Extensions”. Contact an AMD representative for copies of these documents.
Am29LV320D
21
D A T A S H E E T
Table 9.
CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 10.
Description
System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
22
Description
Am29LV320D
December 14, 2005
D A T A S H E E T
Table 11.
Addresses
(Word Mode)
Addresses
(Byte Mode)
Device Geometry Definition
Data
Description
N
27h
4Eh
0016h
Device Size = 2 byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
December 14, 2005
Am29LV320D
23
D A T A S H E E T
Table 12.
Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0031h
Minor version number, ASCII
45h
8Ah
0000h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Description
Silicon Revision Number (Bits 7-2)
24
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0004h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
4Fh
9Eh
000Xh
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
Am29LV320D
December 14, 2005
D A T A S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 14 on page 29 defines the valid
register command sequences. Note that writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown
state. A reset command is required to return the device to normal operation.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See “Erase Suspend/Erase Resume Commands” on page 28 for more information.
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See
the next section, “Reset Command, for more information.
See also “Requirements for Reading Array Data” on
page 11 for more information. The Read-Only Operations table provides the read parameters, and Figure
14, on page 38 shows the timing diagram.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the device entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to read several identifier codes at specific addresses:
Table 13.
Autoselect Codes
Identifier Code
Address
Manufacturer ID
00h
Device ID
01h
Secured Silicon Sector
Factory Protect
03h
Sector Group Protect Verify
(SA)02h
Table 14 on page 29 shows the address and data requirements. This method is an alternative to that
shown in Table 6 on page 16, which is intended for
PROM programmers and requires VID on address pin
A9. The autoselect command sequence may be written to an address within sector that is either in the read
or erase-suspend-read mode. The autoselect command may not be written while the device is actively
programming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to which the
system was writing to the read mode. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend).
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
which the system was writing to the read mode. If the
program command sequence is written to a sector that
is in the Erase Suspend mode, writing the reset
command retur ns the device to the erase-sus-
The Secured Silicon sector provides a secured data
area containing a random, sixteen-byte electronic serial number (ESN). The system can access the Secured Silicon sector by issuing the three-cycle Enter
Secured Silicon sector command sequence. The device continues to access the Secured Silicon sector
until the system issues the four-cycle Exit Secured Sil-
December 14, 2005
Enter Secured Silicon Sector/Exit Secured
Silicon Sector Command Sequence
Am29LV320D
25
D A T A S H E E T
icon sector command sequence. The Exit Secured Silicon sector command sequence returns the device to
normal operation. Table 14 on page 29 shows the address and data requirements for both command sequences. Note that the ACC function and unlock
bypass modes are not available when the device enters the Secured Silicon sector. See also “Secured Silicon Sector Flash Memory Region” on page 20 for
further information.
Byte/Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or
timings. The device automatically provides internally
generated program pulses and verifies the programmed cell margin. Table 14 on page 29 shows the
address and data requirements for the byte program
command sequence. Note that the autoselect, Secured Silicon sector, and CFI modes are unavailable
while a programming operation is in progress.
When the Embedded Program algorithm is complete,
the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to “Write Operation Status” on page 30 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once the device returns to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was successful. However, a succeeding read shows that the
26
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the device faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. Table 14 on page 29 shows
the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h. The second cycle need only contain the data 00h.
The device then re turns to the read mode.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 4, on page 27 illustrates the algorithm for the
program operation. Refer to the table “Erase and Program Operations” on page 41 for parameters, and Figure 18, on page 42 for timing diagrams.
Am29LV320D
December 14, 2005
D A T A S H E E T
RY/BY#. Refer to “Write Operation Status” on page 30
for information on these status bits.
Write Program
Command Sequence
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once the device returns to reading array
data, to ensure data integrity.
Data Poll
from System
Figure 5, on page 28 illustrates the algorithm for the
erase operation. Refer to table “Erase and Program
Operations” on page 41 for parameters, and Figure
19, on page 43 section for timing diagrams.
START
Embedded
Program
algorithm
in progress
Sector Erase Command Sequence
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Programming
Completed
Note: See Table 14 on page 29 for program command
sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 14 on
page 29 shows the address and data requirements for
the chip erase command sequence. Note that the autoselect, Secured Silicon sector, and CFI modes are
unavailable while an erase operation is in progress.
When the Embedded Erase algorithm is complete, the
device returns to the read mode and addresses are no
longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, DQ2, or
December 14, 2005
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 14 on page 29
shows the address and data requirements for the sector erase command sequence. Note that the autoselect, Secured Silicon sector, and CFI modes are
unavailable while an erase operation is in progress.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than
50 µs, otherwise the last address and command may
not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
Sec to r Er as e or Er as e Su sp end dur in g th e
time-out period resets the device to the read
mode. The system must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer timed out (See the section “DQ3: Sector Erase Timer” on page 32.). The time-out begins
from the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6,
Am29LV320D
27
D A T A S H E E T
DQ2, or RY/BY# in the erasing sector. Refer to “Write
Operation Status” on page 30 for information on these
status bits.
Once the sector erase operation begins, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device returns to reading array data, to ensure data integrity.
Figure 5, on page 28 illustrates the algorithm for the
erase operation. Refer to table “Erase and Program
Operations” on page 41 for parameters, and Figure
19, on page 43 for timing diagrams.
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to “Write Operation Status” on page 30 for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to
“Autoselect Mode” on page 16 and “Autoselect Command Sequence” on page 25 for details.
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip
resumes erasing.
Erase Suspend/Erase Resume
Commands
START
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The system can
read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address
within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the
“Write Operation Status” on page 30 section for information on these status bits.
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 14 on page 29 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
28
Embedded
Erase
algorithm
in progress
Am29LV320D
Figure 5.
Erase Operation
December 14, 2005
D A T A S H E E T
Command Definitions
Table 14.
Read (Note 6)
Reset (Note 7)
Autoselect (Note 8)
Manufacturer ID
Device ID
Word
Byte
Word
Byte
Secured Silicon
Factory Protect (Note
9)
Word
Sector Protect Verify
(Note 10)
Word
Enter Secured Silicon Sector
Exit Secured Silicon Sector
Program
Unlock Bypass
Byte
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Unlock Bypass Program (Note 11)
Unlock Bypass Reset (Note 12)
Chip Erase
Sector Erase
Word
Byte
Word
Byte
Bus Cycles (Notes 2–5)
Cycles
Command
Sequence
(Note 1)
Am29LV320D Command Definitions
Addr
Data
1
RA
RD
1
XXX
F0
4
4
First
555
AAA
555
AAA
Second
AA
AA
555
4
4
3
4
4
3
2
2
6
6
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
AA
AA
AA
AA
AA
2AA
555
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
55
55
55
55
55
PA
PD
00
555
AAA
555
AAA
AA
AA
B0
30
55
AA
Addr
555
AAA
555
AAA
2AA
555
2AA
555
Fourth
55
55
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Fifth
Data
Addr
Data
90
X00
01
X01
(see
Table 6)
90
555
55
XXX
XXX
X02
Addr
Sixth
Data
Addr
Data
X03
90
90
X06
(SA)X02
(SA)X04
99/19
00/01
88
90
XXX
00
A0
PA
PD
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
98
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
9.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
5.
Unless otherwise noted, address bits A20–A11 are don’t cares.
6.
No unlock or command cycles required when device is in read
mode.
7.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status information).
The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. See the Autoselect
Command Sequence section for more information.
December 14, 2005
55
90
XXX
8.
55
A0
1
1
555
XXX
1
Byte
2AA
XXX
Erase Resume (Note 14)
CFI Query (Note 15)
Data
2AA
AA
Erase Suspend (Note 13)
Word
Addr
Third
The data is 99h for factory locked and 19h for not factory locked.
10. The data is 00h for an unprotected sector and 01h for a protected
sector.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
14. The Erase Resume command is valid only during the Erase
Suspend mode.
15. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am29LV320D
29
D A T A S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5,
DQ6, and DQ7. Table 15 on page 33 and the following
subsections describe the function of these bits. DQ7
and DQ6 each offer a method for determining whether
a program or erase operation is complete or in
progress. The device also provides a hardware-based
output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or
is completed.
the program or erase operation and DQ7 contains
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 appears on successive read cycles.
Table 15 on page 33 shows the outputs for Data# Polling on DQ7. Figure 6, on page 30 shows the Data#
Polling algorithm. Figure 20, on page 44 in the AC
Characteristics section shows the Data# Polling timing
diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a device
is in Erase Suspend. Data# Polling is valid after the
rising edge of the final WE# pulse in the command sequence.
START
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then the device returns to the read
mode.
DQ7 = Data?
No
No
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device completes
30
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29LV320D
Figure 6.
Data# Polling Algorithm
December 14, 2005
D A T A S H E E T
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
gorithm. Figure 21, on page 45 in the “AC Characteristics” section shows the toggle bit timing diagrams.
Figure 22, on page 45 shows the differences between
DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II.
START
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or in the erase-suspend-read mode. Table 15
on page 33 shows the outputs for RY/BY#.
Read DQ7–DQ0
DQ6: Toggle Bit I
Read DQ7–DQ0
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device entered the Erase Suspend mode. Toggle Bit I may be read at any address,
and is valid after the rising edge of the final WE# pulse
in the command sequence (prior to the program or
erase operation), and during the sector erase time-out.
Toggle Bit
= Toggle?
Yes
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
No
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 15 on page 33 shows the outputs for Toggle Bit I
on DQ6. Figure 7, on page 31 shows the toggle bit al-
December 14, 2005
DQ5 = 1?
Yes
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on “DQ7: Data#
Polling” on page 30).
No
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 7.
Toggle Bit Algorithm
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
Am29LV320D
31
D A T A S H E E T
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that were selected for erasure.
(The system may use either OE# or CE# to control the
read cycles.) But DQ2 cannot distinguish whether the
sector is actively erasing or is erase-suspended. DQ6,
by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
both status bits are required for sector and mode information. Refer to Table 15 on page 33 to compare outputs for DQ2 and DQ6.
Figure 7, on page 31 shows the toggle bit algorithm in
flowchart form, and the section “DQ2: Toggle Bit II” on
page 31 explains the algorithm. See also the DQ6:
Toggle Bit I subsection. Figure 21, on page 45 shows
the toggle bit timing diagram. Figure 22, on page 45
shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7, on page 31 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a
row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the
toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following
read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device successfully completed the program or erase operation. If it is still toggling, the device
did not completed the operation successfully, and the
system must write the reset command to return to
reading array data.
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1,” indicating that
the program or erase cycle was not successfully
completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit is
exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if the device was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure started. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device accepted the
command sequence, and then read DQ3. If DQ3 is “1,”
the Embedded Erase algorithm started; all further
commands (except Erase Suspend) are ignored until
the erase operation is complete. If DQ3 is “0,” the device accepts additional sector erase commands. To
ensure the command is accepted, the system software
should check the status of DQ3 prior to and following
each subsequent sector erase command. If DQ3 is
high on the second status check, the last command
might not have been accepted.
Table 15 on page 33 shows the status of DQ3 relative
to the other status bits.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7, on
page 31).
32
Am29LV320D
December 14, 2005
D A T A S H E E T
Table 15.
Standard
Mode
Erase
Suspend
Mode
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
Write Operation Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits. Refer
to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
December 14, 2005
Am29LV320D
33
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1). . . . . . . . . . . . . . . . . –0.5 V to +4.0 V
A9, OE#, RESET#,
and WP#/ACC (Note 2) . . . . . . . –0.5 V to +12.5 V
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 8, on page 34. During voltage transitions,
input or I/O pins may overshoot to VCC +2.0 V for periods
up to 20 ns. See Figure 9, on page 34.
2. Minimum DC input voltage on pins A9, OE#, RESET#,
and WP#/ACC is –0.5 V. During voltage transitions, A9,
OE#, WP#/ACC, and RESET# may overshoot V SS to
–2.0 V for periods of up to 20 ns. See Figure 8, on page
34. Maximum DC input voltage on pin A9 is +12.5 V
which may overshoot to +14.0 V for periods up to 20 ns.
Maximum DC input voltage on WP#/ACC is +9.5 V which
may overshoot to +12.0 V for periods up to 20 ns.
20 ns
+0.8 V
VSS–0.5 V
VSS–2.0 V
20 ns
Figure 8. Maximum Negative
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
20 ns
20 ns
VCC+2.0 V
VCC+0.5 V
2.0 V
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
VCC Supply Voltages
VCC for all devices . . . . . . . . . . . . . . . . . 2.7 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
34
Am29LV320D
December 14, 2005
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
±3.0
µA
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
35
µA
ILR
RESET# Input Load Current
VCC = VCC max; RESET# = 12.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
±1.0
µA
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
10
16
1 MHz
2
4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz
10
16
1 MHz
2
4
ICC2
VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH, WE# = VIL
15
30
mA
ICC3
VCC Standby Current (Note 2)
CE#, RESET# = VCC ± 0.3 V
0.2
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode (Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VHH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
VCC = 3.0 V ± 10%
11.5
12.5
V
VID
Voltage for Autoselect and Temporary
VCC = 3.0 V ± 10%
Sector Unprotect
11.5
12.5
V
VOL
Output Low Voltage
0.45
V
ICC1
VOH1
VOH2
VLKO
VCC Active Read Current
(Notes 1, 2)
Output High Voltage
IOL = 4.0 mA, VCC = VCC min
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage (Note 5)
2.3
mA
V
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
December 14, 2005
Am29LV320D
35
D A T A S H E E T
DC CHARACTERISTICS
Zero-Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 10.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.6 V
10
2.7 V
Supply Current in mA
8
6
4
2
0
1
2
3
5
Frequency in MHz
Note: T = 25 °C
Figure 11.
36
4
Typical ICC1 vs. Frequency
Am29LV320D
December 14, 2005
D A T A S H E E T
TEST CONDITIONS
Table 16.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
Test Specifications
90
Output Load
30
Input Rise and Fall Times
6.2 kΩ
Figure 12.
100
pF
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
CL
120
Test Setup
Key To Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 13.
December 14, 2005
Input Waveforms and Measurement Levels
Am29LV320D
37
D A T A S H E E T
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
JEDEC
Std.
Description
Test Setup
90
120
Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
90
120
ns
tAVQV
tACC
Address to Output Delay
CE#, OE# = VIL
Max
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
40
50
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
Read
Min
0
ns
tOEH
Output Enable Hold
Time (Note 1)
Toggle and
Data# Polling
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 12, on page 37 and Table 16 on page 37 for test
specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 14.
38
Read Operation Timings
Am29LV320D
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
tRH
RESET#
tRP
Figure 15.
December 14, 2005
Reset Timings
Am29LV320D
39
D A T A S H E E T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Std.
Description
90
120
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
16
ns
tFHQV
BYTE# Switching High to Output Active
Min
90
120
ns
CE#
OE#
BYTE#
BYTE#
Switching
from word
to byte
mode
tELFL
Data Output
(DQ0–DQ7)
Data Output
(DQ0–DQ14)
DQ0–DQ14
Address
Input
DQ15
Output
DQ15/A-1
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
mode
Data Output
(DQ0–DQ7)
DQ0–DQ14
Address
Input
DQ15/A-1
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQV
Figure 16.
BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 17.
40
BYTE# Timings for Write Operations
Am29LV320D
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Byte
Typ
9
Word
Typ
11
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
7
µs
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tWLAX
tWHWH1
tWHWH1
tWHWH2
tWHWH1
tWHWH1
tWHWH2
tBUSY
90
120
Unit
90
120
ns
45
50
0
45
ns
50
35
50
Programming Operation (Note 2)
ns
ns
ns
µs
Notes:
1. Not 100% tested.
2. See “Erase And Programming Performance” on page 50 for more information.
December 14, 2005
Am29LV320D
41
D A T A S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
Status
tBUSY
DOUT
tRB
RY/BY#
tVCS
VCC
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 18.
42
Program Operation Timings
Am29LV320D
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status” on
page 30).
2. These waveforms are for the word mode.
Figure 19.
December 14, 2005
Chip/Sector Erase Operation Timings
Am29LV320D
43
D A T A S H E E T
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20.
44
Data# Polling Timings (During Embedded Algorithms)
Am29LV320D
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle
Figure 21.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22.
December 14, 2005
DQ2 vs. DQ6
Am29LV320D
45
D A T A S H E E T
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std.
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 23.
Temporary Sector Unprotect Timing Diagram
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
Figure 24.
46
tVHH
Accelerated Program Timing Diagram
Am29LV320D
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector/Sector Block Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram
December 14, 2005
Am29LV320D
47
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
Typ
9
tWHWH1
Programming Operation
(Note 2)
Byte
tWHWH1
Word
Typ
11
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
7
µs
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tWHWH1
tWHWH2
90
120
Unit
90
120
ns
0
45
ns
50
ns
ns
µs
Notes:
1. Not 100% tested.
2. See “Erase And Programming Performance” on page 50 for more information.
48
Am29LV320D
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 26.
December 14, 2005
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Am29LV320D
49
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Chip Erase Time
50
Excludes 00h programming
prior to erasure (Note 4)
Byte Program Time
9
300
µs
Word Program Time
11
360
µs
Accelerated Byte/Word Program Time
7
210
µs
Byte Mode
36
108
Word Mode
24
72
Chip Program Time
(Note 3)
sec
Excludes system level
overhead (Note 5)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V,
4. In the pre-programming step of the Embedded Erase
1,000,000 cycles.
algorithm, all bytes are programmed to 00h before erasure.
3. The typical chip programming time is considerably less than
5. System-level overhead is the time required to execute the
the maximum chip programming time listed, since most
two- or four-bus-cycle sequence for the program command.
bytes program faster than the maximum program times
See Table 14 on page 29 for further information on
listed.
command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
CIN
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
Typ
Max
Unit
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
50
Am29LV320D
December 14, 2005
D A T A S H E E T
PHYSICAL DIMENSIONS
FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA)
6 x 12 mm package
Dwg rev AF; 1/2000
xFBD 048
6.00 mm x 12.00 mm
PACKAGE
1.20
0.20
0.94
0.84
12.00 BSC
6.00 BSC
5.60 BSC
4.00 BSC
8
6
48
0.25 0.30 0.35
0.80 BSC
0.40 BSC
December 14, 2005
Am29LV320D
51
D A T A S H E E T
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
52
Am29LV320D
December 14, 2005
D A T A S H E E T
REVISION SUMMARY
Revision A (November 1, 2000)
Erase and Program Operations table
Initial release.
Corrected to indicate tBUSY specification is a maximum
value.
Revision A+1 (January 23, 2001)
Revision B+1 (July 30, 2002)
Ordering Information
Corrected FBGA part number table to include bottom
boot part numbers.
Revision A+2 (February 1, 2001)
Figure 3, Secured Silicon Sector Protect Verify
Deleted fifth block in flowchart and modified text in
fourth block.
Revision C (October 25, 2002)
Connection Diagrams
Distinctive Characteristics
Corrected FBGA ball matrix.
Changed endurance from “write” to “erase” cycles.
Revision A+3 (July 2, 2001)
Connection Diagrams
Global
Changed data sheet status from Advance Information
to Preliminary.
Table 3, Top Boot Secured Silicon Sector
Addresses
Deleted ultrasonic reference and added package
types to special package handling text.
Ordering Information
Added commercial temperature range and removed
extended temperature range.
Corrected sector block size for SA60–SA62 to 3x64.
Sector/Sector Block Protection and Unprotection
Secured Silicon Flash Memory Region
Noted that sectors are erased in parallel.
Customer Lockable subsection: Deleted reference to
alternate method of sector protection.
Secured Silicon Sector Flash Memory Region
Command Definitions
Noted changes for upcoming versions of these devices: reduced Secured Silicons ector size, different
ESN location for top boot devices, and deletion of Secured Silicon erase functionality. Current versions of
these devices remain unaffected.
Noted the following:
Revision B (July 12, 2002)
Autoselect, Secured Silicon, and CFI functions are not
available during a program or erase operation.
ACC and unlock bypass modes are not available when
the Secured Silicon Sector is enabled.
Deleted Preliminary status from document.
Writing incorrect data or commands may place the device in an unknown state. A reset command is then required.
Ordering Information
AC Characteristics
Deleted burn-in option.
Read-only Operations; Word/Byte Configuration:
Changed tDF and tFLQZ to 16 ns for all speed options.
Global
Table 1, Am29LV320D Device Bus Operations
In the legend, corrected VHH maximum voltage to 12.5
V.
DC Characteristics
Secured Silicon Sector Flash Memory Region
TSOP, SO, and BGA Package Capacitance
Added description of Secured Silicon protection verification.
Added BGA capacitance to table.
Autoselect Command Sequence
Deleted IACC and added ILR specifications from table.
Revision C+1 (February 16, 2003)
Distinctive Characteristics
Clarified description of function.
Table 14, Am29LV320D Command Definitions
Added reference to MirrorBit in Secured Silicon section.
Corrected autoselect codes for Secured Silicon Factory Protect.
Added Sector Architecture section.
Secured Silicon Flash Memory Region
Referenced MirrorBit for an example in last sentence
of first paragraph.
December 14, 2005
Am29LV320D
53
D A T A S H E E T
Command Definitions
Erase and Programming Performance
Changed the first address of the Unlock Bypass Reset
from BA to XXX.
Updated Chip Erase Time.
Erase and Programming Performance
Added tRH line to Figure 15.
Corrected the Sector Erase Time Typical to 0.7.
AC Characteristics
Erase and Program Operations
Revision C+2 (April 4, 2003)
t
Corrected Sector Erase Operation time ( WHWH2)
Distinctive Characteristics
Clarified reference to MirrorBit in Secured Silicon section.
Alternate CE# Control Erase and Program
Operations
t
Corrected Sector Erase Operation time ( WHWH2)
Secured Silicon Sector
Command Definitions
Clarified reference of MirrorBit for an example in last
sentence of first paragraph.
Update text in Sector Erase Command Sequence
paragraph.
Revision C+3 (September 19, 2003)
Revision C+7 (July 11, 2005)
Valid Combinations
Global
Added the 90R package to table.
Added text to first page of data sheet and cover page
indicating that the Am29LV320D is now superceded by
the S29AL032D device.
Revision C+4 (April 5, 2004)
Command Definitions
Changed first address data for Erase Suspend/Resume from BA to XXX.
Revision C+5 (June 4, 2004)
Replaced all occurences of “SecSi Sector” with “Secured Silicon Sector” to reflect change of terminology.
Common Flash Memory Interfacte (CFI)
Added reference to application note. Deleted link to
CFI documents available on the world wide web.
Ordering Information
Added Lead-free (Pb-free) options to the temperature
ranges breakout table and valid combinations table.
Product Selector Guide
Added 90R voltage range.
Revision C+6 (November 15, 2004)
Global
Added Colophon. Updated Trademarks. Added reference links
Revision C+8 (December 14, 2005)
Global
This product has been retired and is not available for
designs. For new and current designs, S29AL032D
supersedes Am29LV320D and is the factory-recomm e n d e d m i g r a t i o n p a t h . P l e a s e r e fe r t o t h e
S29AL032D datasheet for specifications and ordering
information. Availability of this document is retained for
reference and historical purposes only.
Ordering Information
Added Automotive In-Cabin temperature range and
associated part numbers in the valid combination table.
54
Am29LV320D
December 14, 2005
D A T A S H E E T
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion LLC will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2000-2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
December 14, 2005
Am29LV320D
55
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