AP1333GU-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Gate Drive D ▼ Small Package Outline ▼ Fast Switching Characteristic BVDSS -20V RDS(ON) 800mΩ ID -550mA S ▼ RoHS Compliant & Halogen-Free SOT-323 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. G S Absolute Maximum Ratings Symbol Parameter Rating Unit VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage +12 V 3 ID@TA=25℃ Drain Current , VGS @ 4.5V -550 mA ID@TA=70℃ 3 -440 mA Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current -2.5 A PD@TA=25℃ Total Power Dissipation 0.35 W Linear Derating Factor 0.003 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 360 ℃/W 1 201501125 AP1333GU-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit -20 - - V BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.01 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-550mA - - 600 mΩ VGS=-4.5V, ID=-500mA - - 800 mΩ VGS=-2.5V, ID=-300mA - - 1000 mΩ VGS=0V, ID=-250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.2 V gfs Forward Transconductance VDS=-5V, ID=-500mA - 1 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-16V ,VGS=0V - - -10 uA Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=-500mA - 1.7 2.7 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-16V - 0.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 0.4 - nC VDS=-10V - 5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-500mA - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω - 10 - ns tf Fall Time VGS=-5V - 2 - ns Ciss Input Capacitance VGS=0V - 66 105.6 pF Coss Output Capacitance VDS=-10V - 25 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Min. Typ. Max. Unit - - -1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=-300mA, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on FR4 board, t ≦ 10 sec. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP1333GU-HF 2.5 2.5 - 5.0V - 4.5V - 3.5V T A =25 C -ID , Drain Current (A) 2.0 1.5 2.0 - 2.5V 1.0 V G = - 2.0V -3.5V 1.5 -2.5V 1.0 V G = - 2.0V 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 0.0 2.5 -V DS , Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 1200 I D = - 0. 5 A V G = - 4.5V I D = - 0. 3 A o T A =25 C 1.4 Normalized RDS(ON) 1000 RDS(ON) (mΩ) -5.0V -4.5V T A = 150 o C -ID , Drain Current (A) o 800 600 400 1.2 1.0 0.8 200 0.6 0 2 4 6 8 10 -50 0 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.0 2.0 0.8 Normalized VGS(th) 1.5 -IS(A) 0.6 T j =150 o C T j =25 o C 0.4 1.0 0.5 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP1333GU-HF f=1.0MHz 100 8 C iss I D = -0.5A V DS = -16V 6 C (pF) -VGS , Gate to Source Voltage (V) 10 C oss 4 C rss 2 0 10 0 1 2 3 4 1 3 Q G , Total Gate Charge (nC) 5 7 9 11 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Operation in this area limited by RDS(ON) 100us -ID (A) 1 Normalized Thermal Response (Rthja) Duty factor=0.5 1ms 0.1 10ms 100ms 1s DC o T A =25 C Single Pulse 0.01 0.1 1 10 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse 0.01 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP1333GU-HF MARKING INFORMATION Part Number : 3 3SS Date Code : SS SS:2004,2008,2012,2016,2020... SS:2003,2007,2011,2015,2019... SS:2002,2006,2010,2014,2018... SS:2001,2005,2009,2013,2017... 5