SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 FEBRUARY 95 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(SAT) Base - Emitter Voltage VBE Static Forward Current Transfer Ratio BCX70G V 20 20 IC=2mA V IEBO =1µA nA µA VCES =45V VCES =45V, Tamb=150oC B nA VEBO =4V IC=10mA,IB = 0.25mA IC= 50mA, IB=1.25mA 0.60 0.70 0.70 0.83 0.85 1.05 V V IC=10mA,IB=0.25mA, IC =50mA, IB=1.25mA PARAMETER SYMBOL VALUE UNIT IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 45 V 0.75 V V V VCES 0.55 0.52 0.65 0.78 Collector-Emitter Voltage Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 200 mA Base Current IB 50 mA 78 170 220 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 145 250 310 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V hFE 40 250 90 220 350 460 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V hFE 100 380 100 300 500 630 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V Transition Frequency fT 125 250 Emitter-Base Capacitance Cebo Collector-Base Capacitance Ccbo Noise Figure N td tr ton ts tf toff E C V V 20 180 70 Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time AG AH AJ AK AW 9P AX P9 0.35 0.55 hFE BCX70K 20 120 50 BCX70J BCX70G BCX70H BCX70J BCX70K BCX70GR BCX70HR BCX70JR BCX70KR BCX71 0.12 0.20 hFE BCX70H PARTMARKING DETAIL MAX. UNIT CONDITIONS. MHz 35 50 85 400 80 480 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group G h11e Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 VEBO=0.5V, f =1MHz h21e 200 VCBO=10V, f =1MHz 18 6 dB IC= 0.2mA, VCE = 5V RG =2KΩ, f=1KH ∆f=200Hz h22e 800 IC:IB1:- IB2 =10:1:1mA R1=5KΩ, R2=5KΩ VBB =3.6V, RL=990Ω hFE Group K Max. pF 150 hFE Group J Typ. pF ns ns ns ns ns ns hFE Group H Min. 4.5 8 2 IC =10mA, VCE =5V f = 100MHz COMPLEMENTARY TYPE 2 2 260 30 24 30 520 60 50 SWITCHING CIRCUIT -VBB R2 VCC(+10V) RL 1µsec R1 +10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω PAGE NO 10-4 3 330 50 kΩ tr < 5nsec Zin ≥ 100kΩ Oscilloscope 100 µS SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 FEBRUARY 95 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(SAT) Base - Emitter Voltage VBE Static Forward Current Transfer Ratio BCX70G V 20 20 IC=2mA V IEBO =1µA nA µA VCES =45V VCES =45V, Tamb=150oC B nA VEBO =4V IC=10mA,IB = 0.25mA IC= 50mA, IB=1.25mA 0.60 0.70 0.70 0.83 0.85 1.05 V V IC=10mA,IB=0.25mA, IC =50mA, IB=1.25mA PARAMETER SYMBOL VALUE UNIT IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 45 V 0.75 V V V VCES 0.55 0.52 0.65 0.78 Collector-Emitter Voltage Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 200 mA Base Current IB 50 mA 78 170 220 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V 145 250 310 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V hFE 40 250 90 220 350 460 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V hFE 100 380 100 300 500 630 IC=10µA, VCE =5V IC=2mA, VCE =5V IC=50mA, VCE =1V Transition Frequency fT 125 250 Emitter-Base Capacitance Cebo Collector-Base Capacitance Ccbo Noise Figure N td tr ton ts tf toff E C V V 20 180 70 Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time AG AH AJ AK AW 9P AX P9 0.35 0.55 hFE BCX70K 20 120 50 BCX70J BCX70G BCX70H BCX70J BCX70K BCX70GR BCX70HR BCX70JR BCX70KR BCX71 0.12 0.20 hFE BCX70H PARTMARKING DETAIL MAX. UNIT CONDITIONS. MHz 35 50 85 400 80 480 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle Spice parameter data is available upon request for this device ABSOLUTE MAXIMUM RATINGS. Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFE Group G h11e Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 h12e 1.5 VEBO=0.5V, f =1MHz h21e 200 VCBO=10V, f =1MHz 18 6 dB IC= 0.2mA, VCE = 5V RG =2KΩ, f=1KH ∆f=200Hz h22e 800 IC:IB1:- IB2 =10:1:1mA R1=5KΩ, R2=5KΩ VBB =3.6V, RL=990Ω hFE Group K Max. pF 150 hFE Group J Typ. pF ns ns ns ns ns ns hFE Group H Min. 4.5 8 2 IC =10mA, VCE =5V f = 100MHz COMPLEMENTARY TYPE 2 2 260 30 24 30 520 60 50 SWITCHING CIRCUIT -VBB R2 VCC(+10V) RL 1µsec R1 +10V tr < 5nsec Mark/Space ratio < 0.01 Zs=50Ω 50Ω PAGE NO 10-4 3 330 50 kΩ tr < 5nsec Zin ≥ 100kΩ Oscilloscope 100 µS