EC7320N60 C o n v e r t e r N-Channel Power MOSFET Features ◆ 600V, 20A, RDS(ON)(Max.) = 0.35Ω @VGS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 % Avalanche Tested Applications Adapter LCD panel Power Switching Mode Power Supply E-Bike Charger ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD EAS TJ, TSTG Parameter Drain - Source Voltage a Gate-Source Voltage Drain Current-Continuous, TC =25 ℃ Drain Current-Continuous, TC =100 ℃ Drain Current-Pulsed b Maximum Power Dissipation @ TJ =25 ℃ Single Pulsed Avalanche Energy e Operating and Store Temperature Range Limit Unit 600 ±30 20 12.6 80 74 1433 -55 to 150 V V A A A W mJ ℃ Value Unit Thermal Characteristics Symbol Parameter Rθ JC Thermal Resistance, Junction-Case Max. 1.69 ℃ /W Rθ JA Thermal Resistance, Junction-Ambient Max. 120 ℃ /W E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 4G18N-Rev.F001 N-Channel Power MOSFET Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics EC7320N60 C o n v e r Typ. Max. Unit t V e 1 μ Ar Symbol Parameter Test Condition Min. BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μ A 600 IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - IGSSF Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA IGSSR Reverse Gate Body Leakage Current VDS = 0V, VGS = -30V - - -100 nA 4 V ■ On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 2 2.27 RDS(on) Static Drain-Source On-Resistance d VGS = 10V, ID = 10A - 0.32 0.35 Ω gFS Forward Transconductance d VDS = 15V, ID = 10A - 11.8 -- S - 2306 - pF - 323 - pF - 7 - pF ■ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ■ Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge E-CMOS Corp. (www.ecmos.com.tw) - 47.7 - ns VDD = 300V, ID = 20A, - 26.4 - ns RG = 25Ω, VGS = 10V - 116.1 - ns - 26.4 - ns - 35.8 - nC - 10.2 - nC - 7.5 - nC VDS = 300V, ID = 20A, VGS = 10V Page 2 of 6 4G18N-Rev.F001 N-Channel Power MOSFET ■ Drain-Source Diode Characteristics IS Drain-Source Diode Forward Continuous Current VGS = 0V - ISM Maximum Pulsed Current VGS = 0V - VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - EC7320N60 C o n v 20 Ae r 80 A t 0.9 1.4 Ve r Notes : a. TJ = +25 C to +150 C. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD= 20A di/dt < 100 A/μs, VDD < BVDSS, T J < +150 C. d. Pulse width < 300 μs; duty cycle < 2%. e. L=10mH, VDD =50V, IAS =9.45A, RG =25Ω Starting TJ =25 C. E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 6 4G18N-Rev.F001 N-Channel Power MOSFET Figure 1. Maximum Safe Operating Area Figure 3. Gate Threshold Variation EC7320N60 C o n v e r t e r Figure.2 Normalized On-Resistance Variation with Temperature Figure 4. Capacitance Characteristics with Temperature Figure 5. Gate Charge Characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 6 Figure 6. On-State Characteristics 4G18N-Rev.F001 N-Channel Power MOSFET Figure 7. Body Diode Forward Voltage Variation with Source Current EC7320N60 C o n v e r t e r Figure 8. Transfer Characteristics Square Pulse Duration (sec) EC7320N60 Figure 9. Normalized Effective Transient Thermal Impedance With Pulse Duration ORDERING INFORMATION Part Number Package Marking EC7320N60AR TO-220F-3L 20N60 LLLLLL YYWW E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 6 Marking Information 1. LLLLLL：Lot No. 2. YY：Year code 3. WW：Week code 4G18N-Rev.F001 N-Channel Power MOSFET Package Outline Dimension E-CMOS Corp. (www.ecmos.com.tw) Page 6 of 6 EC7320N60 C o n v e r t e r 4G18N-Rev.F001