NCP5006 Compact Backlight LED Boost Driver The NCP5006 is a high efficiency boost converter operating in current loop, based on a PFM mode, to drive White LED. The current mode regulation allows a uniform brightness of the LEDs. The chip has been optimized for small ceramic capacitors, capable to supply up to 1.0 W output power. http://onsemi.com MARKING DIAGRAM Features • 2.7 to 5.5 V Input Voltage Range • Vout to 24 V Output Compliance Allows up to 5 LEDs Drive in • • • • • • • • • • • Series Built−in Overvoltage Protection Inductor Based Converter brings up to 90% Efficiency Constant Output Current Regulation 0.3 mA Standby Quiescent Current Includes Dimming Function (PWM) Enable Function Driven Directly from Low Battery Voltage Source Automatic LEDs Current Matching Thermal Shutdown Protection All Pins are Fully ESD Protected Low EMI Radiation Pb−Free Package is Available Typical Applications 5 TSOP−5 SN SUFFIX CASE 483 5 1 DCSAYWG G 1 DCS A Y W G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS Vout 1 GND 2 FB 3 • LED Display Back Light Control • Keyboard Back Light • High Efficiency Step Up Converter 5 Vbat 4 EN (Top View) ORDERING INFORMATION Device Package Shipping† NCP5006SNT1 TSOP−5 3000 Tape & Reel NCP5006SNT1G TSOP−5 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NCP5006/D NCP5006 Vbat Vbat U1 4 EN Vbat C1 5 4.7 mF L1 22 mH 2 GND GND GND D1 1 Vout 3 FB MBR0530 NCP5006 R1 D6 C2 1.0 mF D5 D4 D3 D2 GND 15 W GND LWT67C LWT67C LWT67C LWT67C LWT67C Figure 1. Typical Application Thermal Shutdown Current Sense Vbat 5 Vbat CONTROLLER Vsense EN 4 100 k 1 Vout Q1 GND FB 3 300 k − + 2 GND GND +200 mV Band Gap Figure 2. Block Diagram http://onsemi.com 2 NCP5006 PIN FUNCTION DESCRIPTION Pin Pin Name Type Description 1 Vout POWER This pin is the power side of the external inductor and must be connected to the external Schottky diode. It provides the output current to the load. Since the boost converter operates in a current loop mode, the output voltage can range up to +24 V but shall not extend this limit. However, if the voltage on this pin is higher than the Over Voltage Protection threshold (OVP) the device comes back to shutdown mode. To restart the chip, one must either send a Low to High sequence on Pin EN, or switch off the Vbat supply. A capacitor must be used on the output voltage to avoid false triggering of the OVP circuit. This capacitor should be 1.0 mF minimum. Ceramic type, (ESR <100 mW), is mandatory to achieve the high end efficiency. This capacitor limits the noise created by the fast transients present in this circuitry. In order to limit the inrush current and to operate with an acceptable start−up time, it is recommended to use any value between 1.0 mF and 8.2 mF capacitor maximum. Care must be observed to avoid EMI through the PCB copper tracks connected to this pin. 2 GND POWER This pin is the system ground for the NCP5006 and carries both the power and the analog signals. High quality ground must be provided to avoid spikes and/or uncontrolled operation. Care must be observed to avoid high−density current flow in a limited PCB copper track. Ground plane technique is recommended. 3 FB ANALOG INPUT This pin provides the output current range adjustment by means of a sense resistor connected to the analog control or with a PWM control. The dimming function can be achieved by applying a PWM voltage technique to this pin (see Figure 29). The current output tolerance depends upon the accuracy of this resistor. Using a "5% metal film resistor or better, yields a good enough output current accuracy. Note: A built−in comparator switch OFF the DC/DC converter if the voltage sensed across this pin and ground is higher than 700 mV (typical). 4 EN DIGITAL INPUT This is an Active−High logic input which enables the boost converter. The built−in pull down resistor disables the device when the EN pin is left open. The LED brightness can be controlled by applying a pulse width modulated signal to the enable pin (see Figure 31). 5 Vbat POWER The external voltage supply is connected to this pin. A high quality reservoir capacitor must be connected across Pin 1 and Ground to achieve the specified output voltage parameters. A 4.7 mF/6.3 V, low ESR capacitor must be connected as close as possible across Pin 5 and ground Pin 2. The X5R or X7R ceramic MURATA types are recommended. The return side of the external inductor shall be connected to this pin. Typical application will use a 22 mH, size 1008, to handle the 1.0 to 100 mA max output current range. On the other hand, when the desired output current is above 20 mA, the inductor shall have an ESR < 1.5 W to achieve a good efficiency over the Vbat range. http://onsemi.com 3 NCP5006 MAXIMUM RATINGS Symbol Value Unit Power Supply Rating Vbat 6.0 V Output Power Supply Voltage Compliance Vout 28 V Digital Input Voltage Digital Input Current EN −0.3 < Vin < Vbat + 0.3 1.0 V mA 2.0 200 kV V PD RqJA 160 250 mW °C/W Operating Ambient Temperature Range TA −25 to +85 °C Operating Junction Temperature Range TJ −25 to +125 °C TJmax +150 °C Tstg −65 to +150 °C ESD Capability (Note 1) Human Body Model (HBM) Machine Model (MM) VESD TSOP−5 Package Power Dissipation @ TA = +85°C (Note 2) Thermal Resistance, Junction−to−Air Maximum Junction Temperature Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) "2.0 kV per JEDEC standard: JESD22−A114 Machine Model (MM) "200 V per JEDEC standard: JESD22−A115 2. The maximum package power dissipation limit must not be exceeded. 3. Latch−up current maximum rating: "100 mA per JEDEC standard: JESD78. 4. Moisture Sensivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. POWER SUPPLY SECTION (Typical values are referenced to TA = +25°C, Min & Max values are referenced −25°C to +85°C ambient temperature, unless otherwise noted.) Rating Pin Symbol Min Typ Max Unit Power Supply 4 Vbat 2.7 − 5.5 V Output Load Voltage Compliance 5 Vout 21 24 − V Continuous DC Current in the Load @ Vout = 3xLED, L = 22 mH, ESR < 1.5 W, Vbat = 3.60 V 5 Iout 50 − − mA Stand By Current, @ Iout = 0 mA, EN = L, Vbat = 3.6 V 4 Istdb − 0.3 − mA Stand By Current, @ Iout = 0 mA, EN = L, Vbat = 5.5 V 4 Istdb − 0.8 3.0 mA Inductor Discharging Time @ Vbat = 3.6 V, L = 22 mH, 3xLED, Iout = 10 mA 4 Toffmax − 320 − ns Thermal Shutdown Protection − TSD − 160 − °C Thermal Shutdown Protection Hysteresis − TSDH − 30 − °C http://onsemi.com 4 NCP5006 ANALOG SECTION (Typical values are referenced to TA = +25°C, Min & Max values are referenced −25°C to +85°C ambient temperature, unless otherwise noted.) Pin Symbol Min Typ Max Unit High Level Input Voltage Low Level Input Voltage 4 EN 1.3 − − − − 0.4 V V EN Pull Down Resistor 4 REN − 100 − kW Feedback Voltage Threshold 3 FB 185 200 225 mV Output Current Stabilization Time Delay following a DC/DC Start−up, @ Vbat = 3.60 V, L = 22 mH, Iout = 20 mA 1 Ioutdly − 100 − ms Internal Switch ON Resistor @ Tamb = +25°C 1 QRDSON − 1.7 − W Rating 5. The overall tolerance depends upon the accuracy of the external resistor. ESD PROTECTION The NCP5006 includes silicon devices to protect the pins against the ESD spikes voltages. To cope with the different ESD voltages developed in the applications, the built−in structures have been designed to handle "2.0 kVin Human Body Model (HBM) and "200 V in Machine Model (MM) on each pin. means of a current loop, the output voltage will varies depending upon the dynamic impedance presented by the load. Considering high intensity LED, the output voltage can range from a low 6.40 V (two LED in series biased with a low current), up to 21 V, the voltage compliance the chip can sustain continuously. The basic DC/DC structure is depicted in Figure 3. With a 28 V maximum rating voltage capability, the power device can accommodate high voltage source without any leakage current downgrading. DC/DC OPERATION The DC/DC converter is designed to supply a constant current to the external load, the circuit being powered from a standard battery supply. Since the regulation is made by Vbat L1 22 mH Vdsense POR 1 D1 Vds GND C1 RESET LOGIC CONTROL Vdsense GND + − D4 ZERO_CROSSING D5 1.0 mF TIME_OUT D3 D2 Q1 R1 − V(Ipeak) 3 + R2 xR C2 Vref GND Figure 3. Basic DC/DC Converter Structure http://onsemi.com 5 GND Vs NCP5006 Basically, the chip operates with two cycles: Cycle #1: time t1, the energy is stored into the inductor Cycle #2: time t2, the energy is dumped to the load The POR signal sets the flip−flop and the first cycle takes place. When the current hits the peak value, defined by the First Start−Up error amplifier associated to the loop regulation, the flip−flop resets, the NMOS is deactivated and the current is dumped into the load. Since the timings depend on the environment, the internal timer limits the toff cycle to 320 ns (typical), making sure the system operates in a continuous mode to maximize the energy transfer. Normal Operation Ipeak IL Iv t1 0 mA t2 t Ids 0 mA t Io 0 mA t Figure 4. Basic DC−DC Operation Based on the data sheet, the current flowing into the inductor is bounded by two limits: • Ipeak Value: Internally fixed to 350 mA typical • Iv Value: Limited by the fixed Toff time built in the chip (320 ns typical) The system operates in a continuous mode as depicted in Figure 4 and t1 and t2 times can be derived from basic equations. (Note: The equations are for theoretical analysis only, they do not include the losses.) L + E * dI dt to avoid saturation of the core. On top of that, the ferrite material shall be capable to operate at high frequency (1.0 MHz) to minimize the Foucault’s losses developed during the cycles. The operating frequency can be derived from the electrical parameters. Let V = Vo − Vbat, rearranging Equation 1: ton + dI * L E Since toff is nearly constant (according to the 320 ns typical time), the dI is constant for a given load and inductance value. Rearranging Equation 5 yields: (eq. 1) Let Vbat = E, then: t1 + (Ip * Iv) * L Vbat (Ip * Iv) * L t2 + Vo * Vbat ton + (eq. 2) V*dt L *L E (eq. 6) Let E = Vbat, and Vopk = output peak voltage, then: (eq. 3) ton + Since t2 = 320 ns typical and Vo = 21 V maximum, then (assuming a typical Vbat = 3.0 V): DI + (eq. 5) (Vopk * Vbat) * dt Vbat (eq. 7) Finally, the operating frequency is: t2 * (Vo * Vbat) L f+ 1 ton ) toff (eq. 8) The output power supplied by the NCP5006 is limited to one watt: Figure 5 shows the maximum power that can be delivered by the chip as a function of the output voltage. (eq. 4) 320 ns * (21−3.0) DImax + + 261 mA 22 mH Of course, from a practical stand point, the inductor must be sized to cope with the peak current present in the circuit http://onsemi.com 6 NCP5006 Pout = f(Vbat) @ Rs = 2.0 W Ipeak = f(Vbat) @ Lout = 22 mH 400 1200 3 LED 1000 350 2 LED Ipeak (mA) 4 LED 5 LED 600 300 250 400 200 200 Pout = f(Vbat) @ Rsense = 2.0 W 0 150 2 3 4 Vbat (V) 5 2 6 3 4 Vbat (V) 5 6 Test conditions: L = 22 mH, Rsense = 10 W, Tamb = +20°C Figure 5. Maximum Output Power as a Function of the Battery Supply Voltage Figure 6. Typical Inductor Peak Current as a Function of Vbat Voltage 120 2 LED 100 3 LED 80 Iout (mA) Pout (mW) 800 4 LED 60 5 LED 40 20 0 2.5 3.0 3.5 4.0 Vbat (V) 4.5 5.0 5.5 Test conditions: L = 22 mH, Rsense = 2.0 W, Tamb = +25°C Figure 7. Maximum Output Current as a Function of Vbat http://onsemi.com 7 NCP5006 Output Current Range Set−Up The current regulation is achieved by means of an external sense resistor connected in series with the LED string. Vbat L1 22 mH D1 FB 3 Load Vout 1 Q1 CONTROLLER GND R1 xW GND Figure 8. Output Current Feedback A standard 5% tolerance resistor, 22 W SMD device, yields 9.09 mA, good enough to fulfill the back light demand. The typical application schematic diagram is provided in Figure 9. The current flowing through the LED creates a voltage drop across the sense resistor R1. The voltage drop is constantly monitored internally, and maximum peak current allowed in the inductor is set accordingly in order to keep constant this voltage drop (and thus the current flowing through the LED). For example, should one need a 10 mA output current, the sense resistor should be sized according to the following equation: R1 + Feedback Threshold + 200 mV + 20 W Iout 10 mA (eq. 9) Vbat U1 4 Pulse EN Vbat C1 5 4.7 mF GND L1 22 mH GND 2 Vout GND FB 3 D1 1 MBR0530 NCP5006 R1 D6 D5 D4 D3 D2 GND GND 22 W C2 1.0 mF LWT67C LWT67C LWT67C LWT67C LWT67C Figure 9. Basic Schematic Diagram http://onsemi.com 8 NCP5006 Output Load Drive The Schottky diode D1, associated with capacitor C2 (see Figure 9), provides a rectification and filtering function. When a pulse−operating mode is acceptable: • A PWM mode control can be used to adjust the output current range by means of a resistor and a capacitor connected across FB pin. On the other hand, the Schottky diode can be removed and replaced by at least one LED diode, keeping in mind such LED shall sustain the large pulsed peak current during the operation. In order to optimize the built−in Boost capabilities, one shall operate the NCP5006 in the continuous output current mode. Such a mode is achieved by using and external reservoir capacitor (see Table 1) across the LED. At this point, the peak current flowing into the LED diodes shall be within the maximum ratings specified for these devices. Of course, pulsed operation can be achieved, due to the EN signal Pin 4, to force high current into the LED when necessary. TYPICAL OPERATING CHARACTERISTICS Yield = f(Vbat) @ Iout = 4.0 mA/Lout = 22 mH Yield = f(Vbat) @ Iout = 10 mA/Lout = 22 mH 100 100 4 LED/4 mA 90 80 80 5 LED/4 mA 70 3 LED/4 mA 2 LED/4 mA 60 YIELD (%) YIELD (%) 70 4 LED/10 mA 90 50 40 40 20 20 10 10 3.50 4.00 4.50 5.00 0 2.50 5.50 4.00 4.50 5.00 5.50 Figure 10. Overall Efficiency vs. Power Supply @ Iout = 4.0 mA, L = 22 mH Figure 11. Overall Efficiency vs. Power Supply @ Iout = 10 mA, L = 22 mH Yield = f(Vbat) @ Iout = 20 mA/Lout = 22 mH 100 3 LED/15 mA 90 80 80 70 5 LED/15 mA 2 LED/15 mA YIELD (%) 70 YIELD (%) 3.50 Vbat (V) 90 60 3.00 Vbat (V) Yield = f(Vbat) @ Iout = 15 mA/Lout = 22 mH 100 3 LED/10 mA 50 30 3.00 5 LED/10 mA 60 30 0 2.50 2 LED/10 mA 4 LED/15 mA 50 40 60 20 20 10 10 3.50 4.00 4.50 5.00 0 2.50 5.50 5 LED/20 mA 2 LED/20 mA 40 30 3.00 4 LED/20 mA 50 30 0 2.50 3 LED/20 mA 3.00 3.50 4.00 4.50 5.00 5.50 Vbat (V) Vbat (V) Figure 12. Overall Efficiency vs. Power Supply @ Iout = 15 mA, L = 22 mH Figure 13. Overall Efficiency vs. Power Supply @ Iout = 20 mA, L = 22 mH http://onsemi.com 9 NCP5006 Yield = f(Vbat) @ Iout = 40 mA/Lout = 22 mH Feedback Variation vs. Temperature 100 205 2 LED/40 mA 204 FEEDBACK VOLTAGE (mV) 90 80 YIELD (%) 70 5 LED/40 mA 4 LED/40 mA 60 3 LED/40 mA 50 40 30 20 10 203 202 Vbat = 3.1 V thru 5.5 V 201 200 199 198 197 196 0 2.50 3.00 3.50 4.00 Vbat (V) 4.50 5.00 195 −40 5.50 0 −20 20 40 60 100 80 TEMPERATURE (°C) All curve conditions: L = 22 mH, Cin = 4.7 mF, Cout = 1.0 mF, Typical curve @ T° = +25°C Figure 15. Feedback Voltage Stability Figure 14. Overall Efficiency vs. Power Supply @ Iout = 40 mA, L = 22 mH Feedback Variation vs. Nominal (Vbat = 3.0 V, 6.0 V, T = 255C) 5 Standby Current vs. Vbat 1.4 −40°C thru 125°C 1.2 3 2 1.0 1 Vbat = 3.1 V thru 5.5 V IStby (mA) FEEDBACK VARIATION (%) 4 0 −1 −2 0.6 0.4 −3 0.2 −4 −5 −40 −20 0 20 40 60 80 0.0 2.7 100 3.3 4.5 Vbat (V) Figure 16. Feedback Voltage Variation Figure 17. Standby Current Frequency = f(Vbat) @ Iout = 20 mA−Lout = 22 mH 5.1 5.5 OVP vs. Temperature 26 2 LED 2.0 1.5 3 LED 4 LED 1.0 5 LED 0.5 0 2.5 3.9 TEMPERATURE (°C) OVERVOLTAGE PROTECTION (V) 2.5 f (mHz) 0.8 3.0 3.5 4.0 4.5 5.0 25 Vbat = 5.5 V 24 23 22 −40 −20 5.5 Vbat = 3.6 V Vbat = 2.7 V 0 20 40 60 80 100 Vbat (V) TEMPERATURE (°C) Figure 18. Typical Operating Frequency Figure 19. Overvoltage Protection http://onsemi.com 10 120 130 NCP5006 TYPICAL OPERATING WAVEFORMS Vout Inductor Current Conditions: Vbat = 3.6 V, Lout = 22 mH, 5 LED, Iout = 15 mA Figure 20. Typical Power Up Response Vout Inductor Current Conditions: Vbat = 3.6 V, Lout = 22 mH, 5 LED, Iout = 15 mA Figure 21. Typical Start−Up Inductor Current and Output Voltage http://onsemi.com 11 NCP5006 TYPICAL OPERATING WAVEFORMS Inductor Current Conditions: Vbat = 3.6 V, Lout = 22 mH, 5 LED, Iout = 15 mA Figure 22. Typical Inductor Current Vout Ripple 50 mV/div Inductor Current Conditions: Vbat = 3.6 V, Lout = 22 mH, 5 LED, Iout = 15 mA Figure 23. Typical Output Voltage Ripple http://onsemi.com 12 NCP5006 TYPICAL OPERATING WAVEFORMS Output Voltage Inductor Current Test Conditions: L = 22 mH, Iout = 15 mA, Vbat = 3.6 V, Ambient Temperature Figure 24. Typical Output Peak Voltage 92.00 EFFICIENCY (%) 90.00 ESR = 0.3 W 88.00 86.00 84.00 ESR = 1.3 W 82.00 80.00 78.00 3 3.5 4 4.5 5 5.5 Vbat (V) NCP5006: Efficiency = f(ESR) @ 5 LED, ILed = 20 mA Figure 25. Efficiency as a Function of Vbat and Inductor ESR http://onsemi.com 13 NCP5006 NOISE (mV/SQR/Hz) 10.00 1.00 0.10 0.01 0.1 1 10 100 FREQUENCY (MHz) Figure 26. Noise Returned to the Battery Test Conditions: Vbat = 3.6 V, Iout = 20 mA, string of 3 LED (OSRAM LWT67C) Figure 27. Relative EMI Over 100 kHz − 30 MHz Bandwidth http://onsemi.com 14 1000 NCP5006 TYPICAL APPLICATIONS CIRCUITS Standard Feedback The standard feedback provides a constant current to the LED, independently of the Vbat supply and number of LED associated in series. Figure 28 depicts a typical application to supply 13 mA to the load. Vbat Vbat U1 4 C1 EN Vbat 5 4.7 mF L1 22 mH GND 2 3 GND GND D1 Vout 1 FB MBR0530 NCP5006 R1 D6 C2 1.0 mF D5 D4 D3 D2 GND 15 W GND LWT67C LWT67C LWT67C LWT67C LWT67C Figure 28. Basic DC Current Mode Operation with Analog Feedback PWM Operation start and stop the converter, yielding high transients . These transients might generate spikes difficult to filter out in the rest of the application, a situation not recommended. The output current depends upon the duty cycle of the signal presented to the node Pin 3: this is very similar to the digital control discussed in Figure 31. The average mode yields a noise free operation since the converter operates continuously, together with a very good dimming function. The cost is an extra resistor and one extra capacitor, both being low cost parts. The analog feedback Pin 3 provides a way to dim the LED by means of an external PWM signal as depicted in Figure 29. By optimizing the internal high impedance presented by the FB pin, one can set up a simple R/C network to accommodate such a dimming function. Two modes of operation can be considered: • Pulsed mode, with no filtering • Averaged mode with filtering capacitor Although the pulsed mode will provide a good dimming function, from a human eye standpoint, it will continuously http://onsemi.com 15 NCP5006 Vbat Vbat U1 4 C1 EN Vbat 5 4.7 mF L1 22 mH Average Network 2 GND R2 R3 150 k 10 k 3 PWM C3 100 nF GND D1 Vout 1 FB GND MBR0530 NCP5006 C2 1.0 mF R4 5.6 k GND GND R1 D6 D5 D4 D3 D2 GND 10 W LWT67C LWT67C LWT67C LWT67C LWT67C NOTE: RC filter R2 and C3 is optional (see text) Sense Resistor Figure 29. Basic DC Current Mode Operation with PWM Control value, preferably well below 1.0 MW. Consequently, let R2 = 150 k, R3 = 10 k and R4 = 5.6 k. On the other hand, the feedback delay to control the luminosity of the LED shall be acceptable by the user, 10 ms or less being a good compromise. The time constant can now be calculated based on a 400 mV offset voltage at the C3/R2/R3 node to force zero current to the LED. Assuming the PWM signal comes from a standard gate powered by a 3.0 V supply, running at 10 kHz, then a full dimming of the LED can be achieved with a 95% span of the Duty Cycle signal. Figure 30 depicts the behavior under such PWM analog mode. To implement such a function, let consider the feedback input as an operational amplifier with a high impedance input (reference schematic Figure 29). The analog loop will keep going to balance the current flowing through the sense resistor R1 until the feedback voltage is 200 mV. An extra resistor (R4) isolates the FB node from low resistance to ground, making possible to add an external voltage to this pin. The time constant R2/C3 generates the voltage across C3, added to the node Pin 1, while R2/R3/R4/R1/C3 create the discharge time constant. In order to minimize the pick up noise at FB node, the resistors shall have relative medium PWM VFB VPWM Figure 30. Operation with Analog PWM, f = 10 kHz, DC = 25% http://onsemi.com 16 NCP5006 Digital Control Cycle, but care must be observed as the DC/DC converter is continuously pulsed ON/OFF and noise are likely to be generated. Due to the EN pin, a digitally controlled luminosity can be implemented by providing a PWM signal to this pin (see Figure 31). The output current depends upon the Duty Vbat U1 4 Pulse EN Vbat C1 5 4.7 mF L1 22 mH GND 2 3 GND GND D1 Vout 1 FB MBR0530 NCP5006 R1 GND 22 W D6 C2 1.0 mF D5 D4 D3 D2 GND LWT67C LWT67C LWT67C LWT67C LWT67C NOTE: Pulse width and frequency depends upon the application constraints. Figure 31. Typical Semi−Pulsed Mode of Operation The PWM operation, using the EN pin as a digital control, is depicted in Figures 32 and 33. The tests have been carried out at room temperature with Vbat = 3.60 V, L = 22 mH, five LEDs in series, RFB = 22 W. PWM Vout VFB VPWM Figure 32. Operation @ PWM = 10 kHz, DC = 10% http://onsemi.com 17 NCP5006 PWM Vout VFB PWR CLK Figure 33. Operation @ PWM = 10 kHz, DC = 25% PWM Vout PWR CLK Figure 34. Magnified View of Operation @ PWM = 10 kHz, DC = 25% http://onsemi.com 18 NCP5006 NCP5006 Iout = f(PWM) @ f = 10 kHz 10.00 9.00 8.00 Digital EN Iout (mA) 7.00 Analog PWM 6.00 5.00 4.00 3.00 2.00 1.00 0.00 0 20 40 60 80 100 120 DC (%) Figure 35. Output Current as a Function of the Operating Condition Table 1. Recommended Passive Parts Part Manufacturer Description Part Number Ceramic Capacitor 1.0 mF/16 V MURATA GRM42 − X7R GRM42−6X7R−105K16 Ceramic Capacitor 1.0 mF/25 V MURATA GRM42 – X5R GRM Ceramic Capacitor 4.7 mF/6.3 V MURATA GRM40 – X5R GRM40−X5R−475K6.3 Inductor 22 mH CoilCraft 1008PS − Shielded 1008PS−223MC Inductor 22 mH CoilCraft Power Wafer LPQ4812−223KXC Inductor 22 mH WURTH Power Choke 744031220 Inductor 22 mH TDK Power Inductor VLP4614T−220MR40 http://onsemi.com 19 NCP5006 Typical LEDs Load Mapping Since the output power is voltage battery limited (see Figure 5), one shall arrange the LED to cope with a specific need. In particular, since the power cannot extend 600 mW under realistic battery supply, powering ten LED can be achieved by a series/parallel combination as depicted in Figure 36. 50 mA 75 mA D1 LED D5 LED D2 LED D6 LED D3 LED D7 LED D4 LED D8 LED 7.0 V (Typ.) Load 14 V (Typ.) Load D1 LED D3 LED D5 LED D7 LED D9 LED D2 LED D4 LED D6 LED D8 LED D10 LED Sense Resistor R1 2.7 W GND 60 mA R1 3.9 W Load 10.5 V (Typ.) Sense Resistor GND Test conditions: Vbat = 3.6 V Lout = 22 mH Cout = 1.0 mF D1 LED D4 LED D7 LED D10 LED D13 LED D2 LED D5 LED D8 LED D11 LED D14 LED D3 LED D6 LED D9 LED D12 LED D15 LED Sense Resistor R1 3.3 W GND Figure 36. Examples of Possible LED Arrangements http://onsemi.com 20 NCP5006 GND C2 4.7 mF/ 16 V MMBF0201NLT1 C3 4.7 mF/ 16 V D9 D10 D11 R7 Q2 3.3 R GND LWT67C LWT67C LWT67C TP? R6 Vout D5 D6 D7 D8 D12 Q1 51 R MMBF0201NLT1 GND Adjust Flash Pulse Width 1.0 mF/ 10 V GND D2 HC132 9 U2C 1N4148 D4 10 k R2 10 k R1 C1 8 VCC GND 10 NCP5006 4.7 mF/6.0 V 10 k 500 kA 3 EN TRA TRB CLR GND VCC C9 P2 Vbat CTC R4 VCC 5 1 2 3 NLAS4599 2 GND 15 Vout 22 mH 4 L1 4 1 14 VFB U1 U4A M54HC123 RCCOM 6 5 FB 4 Q U5 1 TP1 Q MBR0530 13 LWT67C LWT67C LWT67C LWT67C LWT67C SNJ54HC132 HC132 13 12 D3 U2D 1.0 nF 11 1N4148 C7 GND VCC C6 C8 10 mF/ 10 V 100 k 3 2 S2 1 D1 VCC SINGLE/REPEAT SNJ54HC132 HC132 1 R8 1.5 k R5 GND S1 2 1 J2 Vbat REPEAT D13 SNJ54HC132 HC132 5 4 10 k GND MBR0530 VCC GND R3 2 4.7 mF/ 16 V P1 100 kA 3 C4 U2A Adjust Flash Duty Cycle 100 nF U2B C5 GND 6 100 nF GND J1 ENABLE TRIG Figure 37. NCP5006 Demo Board Schematic Diagram http://onsemi.com 21 VCC GND NCP5006 Figure 38. NCP5006 Demo Board PCB: Top Layer Figure 39. NCP5006 Demo Board PCB: Bottom Layer Figure 40. NCP5006 Demo Board Top Silkscreen http://onsemi.com 22 NCP5006 FIGURES INDEX Figure 1: Figure 2: Figure 3: Figure 4: Figure 5: Figure 6: Figure 7: Figure 8: Figure 9: Figure 10: Figure 11: Figure 12: Figure 13: Figure 14: Figure 15: Figure 16: Figure 17: Figure 18: Figure 19: Figure 20: Figure 21: Figure 22: Figure 23: Figure 24: Figure 25: Figure 26: Figure 27: Figure 28: Figure 29: Figure 30: Figure 31: Figure 32: Figure 33: Figure 34: Figure 35: Figure 36: Figure 37: Figure 38: Figure 39: Figure 40: Typical Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Basic DC/DC Converter Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Basic DC/DC Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Maximum Output Power as a Function of the Battery Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Typical Inductor Peak Current as a Function of Vbat Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Maximum Output Current as a Function of Vbat . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Output Current Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Basic Schematic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Overall Efficiency vs. Power Supply @ Iout = 4.0 mA, L = 22 mH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Overall Efficiency vs. Power Supply @ Iout = 10 mA, L = 22 mH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Overall Efficiency vs. Power Supply @ Iout = 15 mA, L = 22 mH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Overall Efficiency vs. Power Supply @ Iout = 20 mA, L = 22 mH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Overall Efficiency vs. Power Supply @ Iout = 40 mA, L = 22 mH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Feedback Voltage Stability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Feedback Voltage Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Standby Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical Operating Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical Power Up Response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Typical Start−Up Inductor Current and Output Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Typical Inductor Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Typical Output Voltage Ripple . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Typical Output Peak Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Efficiency as a Function of Vbat and Inductor ESR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Noise Returned to the Battery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Relative EMI Over 100 kHz−30 MHz Bandwidth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Basic DC Current Mode Operation with Analog Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Basic DC Current Mode Operation with PWM Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Operation with Analog PWM, f = 10 kHz, DC = 25% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Typical Semi−Pulsed Mode of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Operation @ PWM = 10 kHz, DC = 10% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Operation @ PWM = 10 kHz, DC = 25% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Magnified View of Operation @ PWM = 10 kHz, DC = 25% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Output Current as a Function of the Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Examples of Possible LED Arrangements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 NCP5006 Demo Board Schematic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 NCP5006 Demo Board PCB: Top Layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 NCP5006 Demo Board PCB: Bottom Layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 NCP5006 Demo Board Top Silkscreen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 NOTE CAPTIONS INDEX Note 1: Note 2: Note 3: Note 4: Note 5: This device series contains ESD protection and exceeds the following tests . . . . . . . . . . . . . . . . . . . . . . . . . The maximum package power dissipation limit must not be exceeded . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Latch−up current maximum rating: "100 mA per JEDEC standard: JESD78 . . . . . . . . . . . . . . . . . . . . . . . . Moisture Sensivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A . . . . . . . . . . . . . . . . . . . . . . . . The overall tolerance depends upon the accuracy of the external resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . ABBREVIATIONS EN FB POR Enable Feed Back Power On Reset: Internal pulse to reset the chip when the power supply is applied http://onsemi.com 23 4 4 4 4 5 NCP5006 PACKAGE DIMENSIONS TSOP−5 SN SUFFIX CASE 483−02 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D S 5 4 1 2 3 B L MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.90 3.10 0.1142 0.1220 B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 D 0.25 0.50 0.0098 0.0197 G 0.85 1.05 0.0335 0.0413 H 0.013 0.100 0.0005 0.0040 J 0.10 0.26 0.0040 0.0102 K 0.20 0.60 0.0079 0.0236 L 1.25 1.55 0.0493 0.0610 M 0_ 10 _ 0_ 10 _ S 2.50 3.00 0.0985 0.1181 G A J C 0.05 (0.002) H M K SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 24 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCP5006/D