QFET ® FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant D D G S G I2-PAK D2-PAK FQB Series FQI Series G D S S Absolute Maximum Ratings Symbol Parameter FQB12N60C/FQI12N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 12 A IDM Drain Current - Pulsed - Continuous (TC = 100°C) (Note 1) 7.4 A 48 A ± 30 V 870 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C) 3.13 W Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 225 W 1.78 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.56 °C/W RθJA Thermal Resistance, Junction-to-Ambient* -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FQB12N60C / FQI12N60C Rev. A 1 www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET September 2007 Device Marking Device Package Reel Size Tape Width Quantity FQB12N60C FQB12N60CTM D2-PAK 330mm 24mm 800 FQI12N60C FQI12N60CTU I2-PAK - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.53 0.65 Ω -- 13 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A gFS Forward Transconductance VDS = 50 V, ID = 6 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1760 2290 pF -- 182 235 pF -- 21 28 pF -- 30 70 ns -- 85 180 ns -- 140 280 ns -- 90 190 ns -- 48 63 nC -- 8.5 -- nC -- 21 -- nC 12 A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 300 V, ID = 12A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 12A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V trr Reverse Recovery Time 420 -- ns Reverse Recovery Charge VGS = 0 V, IS = 12 A, dIF / dt = 100 A/µs -- Qrr -- 4.9 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 11mH, IAS =12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQB12N60C / FQI12N60C Rev. A 2 www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 0 2 1 10 10 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage VGS = 10V 1.0 VGS = 20V 0.5 6 VGS, Gate-Source Voltage [V] 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 5 10 15 20 25 30 10 35 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3500 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss 1500 1000 1.4 VDS = 120V Ciss 2000 1.2 12 10 2500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.8 VSD, Source-Drain voltage [V] ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 500 VDS = 300V VDS = 480V 8 6 4 2 ※ Note : ID = 12A 0 -1 10 0 0 10 1 10 FQB12N60C / FQI12N60C Rev. A 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 14 Operation in This Area is Limited by R DS(on) 2 12 10 µs 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 100 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 8 6 4 2 -2 10 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve Zθ JC(t), Thermal Response 10 0 D = 0 .5 10 0 .2 -1 ※ N o te s : 1 . Z θ J C (t) = 0 .5 6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 10 -2 10 PDM 0 .0 2 0 .0 1 t1 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQB12N60C / FQI12N60C Rev. A 4 www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FQB12N60C / FQI12N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB12N60C / FQI12N60C Rev. A 5 www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB12N60C / FQI12N60C Rev. A 6 www.fairchildsemi.com 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 2.54 TYP (0.75) ° ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2-PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters FQB12N60C / FQI12N60C Rev. A 7 www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET Package Dimensions (Continued) I2-PAK 4.50 ±0.20 (0.40) 9.90 ±0.20 +0.10 MAX13.40 9.20 ±0.20 (1.46) 1.20 ±0.20 1.30 –0.05 0.80 ±0.10 2.54 TYP 10.08 ±0.20 1.47 ±0.10 MAX 3.00 (0.94) 13.08 ±0.20 ) 5° (4 1.27 ±0.10 +0.10 0.50 –0.05 2.54 TYP 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FQB12N60C / FQI12N60C Rev. A 8 www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET Package Dimensions The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 9 FQB12N60C / FQI12N60C Rev. A www.fairchildsemi.com FQB12N60C / FQI12N60C 600V N-Channel MOSFET TRADEMARKS