isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV66 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min.) ·High Speed Switching APPLICATIONS ·Designed for switch mode power supply, UPS, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IB Base Current-Continuous 5 A IBM Base Current-Peak 7.5 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV66 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0, L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A; TC= 100℃ 1.2 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A; TC= 100℃ 1.3 1.3 V ICER Collector Cutoff Current VCE= VCEV; RBE= 10Ω VCE= VCEV; RBE= 10Ω; TC=100℃ 0.2 1.5 mA ICEV Collector Cutoff Current VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ 0.2 1.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA isc website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX UNIT 450 V 7 V