APT14F100B
APT14F100S
1000V, 14A, 0.98Ω Max, trr ≤240ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO
-2
47
D3PAK
APT14F100B
APT14F100S
Single die FREDFET
D
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
14
Continuous Drain Current @ TC = 100°C
9
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
875
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
7
A
1
56
Thermal and Mechanical Characteristics
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
500
RθJC
Junction to Case Thermal Resistance
0.25
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
0.11
-55
150
300
°C/W
°C
0.22
oz
5.9
g
10
in·lbf
1.1
N·m
Rev C 5-2009
Min
Characteristic
050-8160
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = VDS, ID = 1mA
Threshold Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
VGS = 10V, ID = 7A
3
VDS = 1000V
Forward Transconductance
TJ = 125°C
VGS = ±30V
Min
Test Conditions
VDS = 50V, ID = 7A
Typ
Output Capacitance
16
3965
55
335
135
70
120
21
60
28
29
95
26
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Max
0.98
5
Unit
V
V/°C
Ω
V
mV/°C
250
1000
±100
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
TJ = 25°C
VGS = 0V
Typ
1000
1.15
0.82
2.5
4
-10
Reference to 25°C, ID = 250µA
Breakdown Voltage Temperature Coefficient
RDS(on)
Min
APT14F100B_S
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
Unit
S
pF
VGS = 0V, VDS = 0V to 667V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 667V, ID = 7A
tr
td(off)
tf
Turn-Off Delay Time
VGS = 0 to 10V, ID = 7A,
VDS = 500V
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
14
56
205
355
0.90
2.20
8.90
12.90
1.0
240
430
S
TJ = 25°C
TJ = 125°C
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
VDD = 100V
TJ = 25°C
Unit
A
G
ISD = 7A, TJ = 25°C, VGS = 0V
ISD = 7A 3
Typ
TJ = 125°C
ISD ≤ 7A, di/dt ≤1000A/µs, VDD = 400V, TJ = 125°C
V
ns
µC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 35.71mH, RG = 25Ω, IAS = 7A.
050-8160
Rev C 5-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.15E-7/VDS^2 + 2.03E-8/VDS + 3.93E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
40
V
GS
= 10V
T = 125°C
J
12
V
30
GS
ID, DRIAN CURRENT (A)
TJ = -55°C
25
20
TJ = 25°C
15
10
10
8
6
5V
4
TJ = 125°C
5
2
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
NORMALIZED TO
VGS = 10V @ 7A
2.5
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
50
2.0
1.5
1.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
60
ID, DRAIN CURRENT (A)
40
TJ = -55°C
30
TJ = 25°C
20
TJ = 125°C
10
0.5
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
6,000
20
Ciss
16
TJ = -55°C
14
TJ = 25°C
12
TJ = 125°C
10
1000
C, CAPACITANCE (pF)
gfs, TRANSCONDUCTANCE
18
8
6
100
Coss
4
2
0
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
2
4
6
8
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
VDS = 200V
VDS = 500V
8
6
VDS = 800V
4
2
0
20
0
60
12
10
Crss
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
ID = 7A
14
0
10
10
40 60 80 100 120 140 160 180
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
ISD, REVERSE DRAIN CURRENT (A)
0
50
40
TJ = 25°C
30
TJ = 150°C
20
10
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev C 5-2009
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
= 6, 7, 8 & 9V
050-8160
ID, DRAIN CURRENT (A)
35
0
APT14F100B_S
14
APT14F100B_S
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
10
13µs
100µs
1ms
1
10ms
Rds(on)
0.1
1
10
100µs
Rds(on)
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
1ms
10ms
100ms
DC line
TJ = 150°C
TC = 25°C
1
100ms
TJ = 125°C
TC = 75°C
13µs
IDM
C
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.25
D = 0.9
0.20
0.7
0.15
Note:
0.5
0.10
t1
t2
0.3
t1 = Pulse Duration
SINGLE PULSE
0.05
0
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
Rev C 5-2009
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-8160
13.41 (.528)
13.51(.532)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Drain
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.