PD-94401A RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) IRHSLNA57064 60V, N-CHANNEL Product Summary Part Number Radiation Level IRHSLNA57064 100K Rads (Si) IRHSLNA53064 300K Rads (Si) RDS(on) QG 6.1mΩ 160nC 6.1mΩ 160nC IRHSLNA54064 600K Rads (Si) 6.1mΩ 160nC IRHSLNA58064 1000K Rads (Si) 7.1mΩ 160nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Features: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSNA57064 for Lower RDS(on) Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR IF (AV)@ TC = 25°C IF (AV)@ TC =100°C TJ, TSTG Units Continuous Drain or Source Current Continuous Drain or Source Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➃ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Schottky and Body Diode Avg. Forward Current ➂ Schottky and Body Diode Avg. Forward Current ➂ Opeating and Storage Temperature Range 75* 75* 300 250 2.0 ±20 370 75 25 75* 75* -55 to 150 Pckg. Mounting Surface Temp. Weight 300 (for 5s) 3.3 (Typical) A W W/°C V mJ A mJ A °C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 08/07/02 IRHSLNA57064 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units 60 — — — — 2.0 45 — — — — — — — — — — — — — — — — — 100 — -100 — 160 — 55 — 65 — 35 — 125 — 75 — 50 6.6 — Test Conditions 6.1 V mΩ VGS = 0V, ID = 1.0mA VGS = 12V, ID = 45A 4.0 — 50 50 V S( ) µA mA nC VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 45A VDS = 48V, VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =45A, VDS = 30V ns VDD = 30V, ID = 45A, VGS =12V, RG = 2.35Ω Ω Parameter BVDSS RDS(on) nA nH Measured from center of drain pad to center of source pad Schottky Diode & Body Diode Ratings and Characteristics Parameter VSD Min Typ Max Units Diode Forward Voltage — — — — — — trr Reverse Recovery Time QRR Reverse Recovery Charge LS + LD Total Inductance ton Forward Turn-On Time — 0.93 — 0.9 — 0.82 — 100 — 210 7.95 — V nS nC nH Test Conditions TJ = -55°C, ID=45A, VGS = 0V TJ = 25°C, ID= 45A, VGS = 0V TJ = 125°C, ID=45A, VGS = 0V Tj = 25°C, IF =45A, di/dt ≤ 100A/µs VDS ≤ 30V Measured from center of drain pad to center of source pad (for Schottky only) Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD Thermal Resistance Parameter RthJC RthJC Junction-to-Case (MOSFET) Junction-to-Case (Schottky) Min Typ Max — — — — 0.5 0.7 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHSLNA57064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ ⑦ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➁ On-State Resistance (TO-3) Static Drain-to-Source ➁ On-State Resistance (SMD-2) Diode Forward Voltage ➁ Test Conditions 60 2.0 — — — — — 4.0 100 -100 10 6.1 60 1.5 — — — — — 4.0 100 -100 25 7.1 µA mΩ VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =45A — 6.1 — 7.1 mΩ VGS = 12V, ID =45A — 1.3 — 1.3 V VGS = 0V, IS = 45A V nA 1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064 2. Part number IRHSLNA58064 International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ⑦ Ion VDS (V) Range (µm) @V GS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 37.4 60 60 60 52 34 29.2 46 46 35 25 15 106 35 35 27 20 14 Energy (MeV) 300 300 2068 VDS Kr Xe Au LET MeV/(mg/cm2)) 39.2 63.3 86.6 70 60 50 40 30 20 10 0 Kr Xe Au 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHSLNA57064 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 10 5.0V 20µs PULSE WIDTH T = 25 C 1 10 10 20µs PULSE WIDTH T = 150 C ° J 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 150 ° C 100 TJ = 25 ° C 10 1 5.0 V DS = 25V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 5.0V ° J 1 0.1 4 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 75A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com IRHSLNA57064 Pre-Irradiation VGS , Gate-to-Source Voltage (V) 20 ID = 45A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 5b 13 0 0 50 100 150 200 250 QG , Total Gate Charge (nC) Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS QGD D.U.T. + V - DS VGS VG 3mA Charge IG ID Current Sampling Resistors Fig 5a. Basic Gate Charge Waveform www.irf.com Fig 5b. Gate Charge Test Circuit 5 IRHSLNA57064 Pre-Irradiation 200 RD VDS LIMITED BY PACKAGE I D , Drain Current (A) VGS D.U.T. RG 150 + - VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 100 Fig 7a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 6. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 7b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET 6 www.irf.com Pre-Irradiation IRHSLNA57064 EAS , Single Pulse Avalanche Energy (mJ) 800 ID 33.5A 47.4A BOTTOM 75A TOP 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 9. Maximum Avalanche Energy Vs. Drain Current V (B R )D SS 15V tp L VD S D.U .T. RG IA S 2V 0 GS V tp DR IV E R + V - DD 0.01 Ω Fig 9a. Unclamped Inductive Test Circuit www.irf.com A IAS Fig 9b. Unclamped Inductive Waveforms 7 IRHSLNA57064 Pre-Irradiation MOSFET Body Diode & Schottky Diode Characteristics Instantaneous Forward Current - I S (A) 100 10 Tj = 125°C Tj = 25°C Tj = -55°C 1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V SD (V) Fig. 10 - Typical Forward Voltage Drop Characterstics Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 8 www.irf.com Pre-Irradiation IRHSLNA57064 Footnotes: ➀ Repetitive Rating; Pulse width limited by ➄ Total Dose Irradiation with VGS Bias. maximum junction temperature ➁ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➂ 50% Duty Cycle, Rectangular 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. ➃ VDD = 25V, starting TJ = 25°C, L= 0.13 mH Peak IL = 75A, VGS = 12V ⑦ Specified Radiation Characteristics are for Radiation Hardened MOSFET die only. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/02 www.irf.com 9