IRF IRHSLNA57064 Rad-hard synchronous rectifier surface mount (smd-2) Datasheet

PD-94401A
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSLNA57064
60V, N-CHANNEL
Product Summary
Part Number Radiation Level
IRHSLNA57064 100K Rads (Si)
IRHSLNA53064 300K Rads (Si)
RDS(on)
QG
6.1mΩ 160nC
6.1mΩ 160nC
IRHSLNA54064 600K Rads (Si)
6.1mΩ
160nC
IRHSLNA58064 1000K Rads (Si) 7.1mΩ
160nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
n
n
n
n
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSNA57064 for Lower RDS(on)
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Units
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➃
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Schottky and Body Diode Avg. Forward Current ➂
Schottky and Body Diode Avg. Forward Current ➂
Opeating and Storage Temperature Range
75*
75*
300
250
2.0
±20
370
75
25
75*
75*
-55 to 150
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
A
W
W/°C
V
mJ
A
mJ
A
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
08/07/02
IRHSLNA57064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
60
—
—
—
—
2.0
45
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
— -100
—
160
—
55
—
65
—
35
—
125
—
75
—
50
6.6
—
Test Conditions
6.1
V
mΩ
VGS = 0V, ID = 1.0mA
VGS = 12V, ID = 45A‚
4.0
—
50
50
V
S( )
µA
mA
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, I DS = 45A‚
VDS = 48V, VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =45A,
VDS = 30V
ns
VDD = 30V, ID = 45A,
VGS =12V, RG = 2.35Ω
Ω
Parameter
BVDSS
RDS(on)
nA
nH
Measured from center of drain
pad to center of source pad
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD
Min Typ Max Units
Diode Forward Voltage
—
—
—
—
—
—
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
LS + LD Total Inductance
ton
Forward Turn-On Time
—
0.93
—
0.9
—
0.82
—
100
—
210
7.95 —
V
nS
nC
nH
Test Conditions
TJ = -55°C, ID=45A, VGS = 0V‚
TJ = 25°C, ID= 45A, VGS = 0V‚
TJ = 125°C, ID=45A, VGS = 0V‚
Tj = 25°C, IF =45A, di/dt ≤ 100A/µs
VDS ≤ 30V
Measured from center of drain pad to
center of source pad (for Schottky only)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
Thermal Resistance
Parameter
RthJC
RthJC
Junction-to-Case (MOSFET)
Junction-to-Case (Schottky)
Min Typ Max
—
—
—
—
0.5
0.7
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHSLNA57064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ ⑦
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➁
On-State Resistance (TO-3)
Static Drain-to-Source ➁
On-State Resistance (SMD-2)
Diode Forward Voltage ➁
Test Conditions
60
2.0
—
—
—
—
—
4.0
100
-100
10
6.1
60
1.5
—
—
—
—
—
4.0
100
-100
25
7.1
µA
mΩ
VGS = 0V, ID = 1.0mA
VGS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=48V, VGS =0V
VGS = 12V, ID =45A
—
6.1
—
7.1
mΩ
VGS = 12V, ID =45A
—
1.3
—
1.3
V
VGS = 0V, IS = 45A
V
nA
1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064
2. Part number IRHSLNA58064
International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area ⑦
Ion
VDS (V)
Range
(µm) @V GS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
37.4
60
60
60
52
34
29.2
46
46
35
25
15
106
35
35
27
20
14
Energy
(MeV)
300
300
2068
VDS
Kr
Xe
Au
LET
MeV/(mg/cm2))
39.2
63.3
86.6
70
60
50
40
30
20
10
0
Kr
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHSLNA57064
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
100
10
5.0V
20µs PULSE WIDTH
T = 25 C
1
10
10
20µs PULSE WIDTH
T = 150 C
°
J
1
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 150 ° C
100
TJ = 25 ° C
10
1
5.0
V DS = 25V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
5.0V
°
J
1
0.1
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 75A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
IRHSLNA57064
Pre-Irradiation
VGS , Gate-to-Source Voltage (V)
20
ID = 45A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 5b
13
0
0
50
100
150
200
250
QG , Total Gate Charge (nC)
Fig 5. Typical Gate Charge Vs.
Gate-to-Source Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 5a. Basic Gate Charge Waveform
www.irf.com
Fig 5b. Gate Charge Test Circuit
5
IRHSLNA57064
Pre-Irradiation
200
RD
VDS
LIMITED BY PACKAGE
I D , Drain Current (A)
VGS
D.U.T.
RG
150
+
- VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
100
Fig 7a. Switching Time Test Circuit
50
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 6. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 7b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET
6
www.irf.com
Pre-Irradiation
IRHSLNA57064
EAS , Single Pulse Avalanche Energy (mJ)
800
ID
33.5A
47.4A
BOTTOM 75A
TOP
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 9. Maximum Avalanche Energy
Vs. Drain Current
V (B R )D SS
15V
tp
L
VD S
D.U .T.
RG
IA S
2V
0 GS
V
tp
DR IV E R
+
V
- DD
0.01 Ω
Fig 9a. Unclamped Inductive Test Circuit
www.irf.com
A
IAS
Fig 9b. Unclamped Inductive Waveforms
7
IRHSLNA57064
Pre-Irradiation
MOSFET Body Diode & Schottky Diode Characteristics
Instantaneous Forward Current - I S (A)
100
10
Tj = 125°C
Tj = 25°C
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V SD (V)
Fig. 10 - Typical Forward Voltage Drop Characterstics
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky
8
www.irf.com
Pre-Irradiation
IRHSLNA57064
Footnotes:
➀ Repetitive Rating; Pulse width limited by
➄ Total Dose Irradiation with VGS Bias.
maximum junction temperature
➁ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➂ 50% Duty Cycle, Rectangular
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➃ VDD = 25V, starting TJ = 25°C, L= 0.13 mH
Peak IL = 75A, VGS = 12V
⑦ Specified Radiation Characteristics are for
Radiation Hardened MOSFET die only.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/02
www.irf.com
9
Similar pages