, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.8n and 1.2£i • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Symbol Ordering Information PART NUMBER 9D PACKAGE BRAND IRF220 TO-204AA IRF220 IRF221 TO-204AA IRF221 IRF222 TO-204AA IRF222 IRF223 TO-204AA IRF223 NOTE: When ordering, use the entire part number. Packaging JEDECTO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Absolute Maximum Ratings Tc = 25°c, Unless otNsrwise Drain to Source Voltage (Note 1 ) .... Vn<? Drain to Gate Voltage (RQS = 20kfl) (Note 1 ) Continuous Drain Current T c = 100°C Pulsed Drain Current (Note 3) ln In Gate to Source Voltage Maximum Power Dissipation . . . Linear Derating Factor Single Pulse Avalanche Rating. . Vpc Pn EA<; Operating and Storage Temperature .... Maximum Temperature for Soldering Leads at 0 063in (1 6mm) from Case for 10s Packaae Bodv for 10s. See Techbrief 334 . . . . Ti Specified IRF220 200 200 5.0 3.0 20 ±20 IRF221 150 150 5.0 3.0 20 ±20 40 IRF222 200 200 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 0.32 85 -55 to 150 40 0.32 85 -55 to 150 300 260 300 260 300 260 IRF223 150 150 4.0 2.5 16 UNITS V V A A A ±20 40 0.32 85 -55 to 150 V W W/°C mJ °C 300 260 °C °C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified WIN TYP IRF220, IRF222 200 _ IRF221.IRF223 150 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = OV - - 25 uA VDS = 0-8 x Rated BVDSS, VGS = OV, Tj = 125°C - - 250 uA IRF220, IRF221 5.0 - _ A IRF222, IRF223 4.0 - - A - - ±100 nA IRF220, IRF221 - 0.5 0.8 n IRF222, IRF223 - 0.8 1.2 £1 1.3 2.5 - S - 20 40 ns - 30 60 ns - 50 100 ns - 30 60 ns - 11 15 nC - 5.0 - nC - 6.0 - nC PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) SYMBOL BVDSs VGS(TH) toss 'D(ON) 'GSS rDS(ON) 9fs 'd(ON) tr td(OFF) tf Q9(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd TEST CONDITIONS MAX UNITS ID = 250uA, VGS = OV, (Figure 10) VDS = VGS. ID =2^A VDS V > lD(ON) x rDS(ON)MAX. VGS = 10V VGS = ±2ov ID = 2.5A, VGS = 1°V, (Figure 8) VDS > !D(ON) x rDS(ON)MAX. ]D = 2.5A VDD = 0.5 x Rated BVDSS, ID = 2.5A, RG = 50£i For IRF220, 222 RL = 80£i For IRF221. 223 RL = 6011 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 1°V, ID = 6-OA. VDS = °-8 x Rated BVDss Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature Electrical Specifications Tc = 25°C. Unless Otherwise Specified (Continued) PARAMETER Input Capacitance SYMBOL CISS TEST CONDITIONS VDS = 25V, VGS = OV, f=1MHz (Figure 11) MIN TYP MAX UNITS - 450 - PF Output Capacitance COSS - 150 - PF Reverse Transfer Capacitance CRSS - 40 - PF Internal Drain Inductance LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Thermal Resistance Junction to Case RBJC Thermal Resistance Junction to Ambient R6JA Modified MOSFET Symbol Showing the Internal Device Inductances Free Air Operation 5.0 nH 12.5 nH - - 3.12 °C/W - - 30 °C/W MIN TYP MAX UNITS _ - 5.0 A - - 4.0 A . . 20 A - - 16 A Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current SYMBOL ISD IRF220, IRF221 IRF222, IRF223 Pulse Source to Drain Current (Note 3) !SDM IRF220, IRF221 TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier b < s IRF222, IRF223 Source to Drain Diode Voltage (Note 2) VSD IRF220, IRF221 Tc = 25°C, ISD = 5.0A, VGS = 0V, (Figure 13) - - 2.0 V IRF222, IRF223 Tc = 25°C, ISD = 4.0A, VGS = ov. (Figure 13) - - 1.8 V trr Tj = 150°C, ISD = 5.0A, dlSD/dt = 100A/us - 350 - ns QRR Tj = 150°C, ISD = 5.0A, dlso/dt = 100A/US - 2.3 - nc Reverse Recovery Time Reverse Recovery Charge