NTJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • • • • • http://onsemi.com Small Footprint (2 x 2 mm) Low Gate Charge N−Channel Device ESD Protected Gate Same Package as SC−70 (6 Leads) Pb−Free Packages are Available V(BR)DSS RDS(on) Typ 0.22 W @ 4.5 V 0.32 W @ 2.5 V 8V 0.775 A 0.51 W @ 1.8 V Applications • • • • ID Max Load Power switching Li−Ion Battery Supplied Devices Cell Phones, Media Players, Digital Cameras, PDAs DC−DC Conversion SC−88 (SOT−363) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 0.63 A Parameter Continuous Drain Current (Based on RqJA) Steady State Power Dissipation (Based on RqJA) Steady State TA = 25°C Continuous Drain Current (Based on RqJL) Steady State TA = 25°C Power Dissipation (Based on RqJL) Steady State TA = 25°C 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View TA = 85°C 0.46 PD TA = 85°C 0.14 ID MARKING DIAGRAM & PIN ASSIGNMENT A 0.91 D1 G2 S2 0.65 TA = 25°C W 0.55 PD TA = 85°C 0.29 IDM ±1.2 A TJ, TSTG −55 to 150 °C IS 0.63 A TL 260 °C t ≤10 ms Operating Junction and Storage Temperature W 0.27 TA = 85°C Pulsed Drain Current S1 Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 1 SC−88/SOT−363 CASE 419B STYLE 28 6 TD M G G 1 S1 G1 D2 TD M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Units Junction−to−Ambient – Steady State RqJA 400 460 °C/W Junction−to−Lead (Drain) – Steady State RqJL 194 226 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. © Semiconductor Components Industries, LLC, 2006 November, 2006 − Rev. 3 1 Publication Order Number: NTJD4401N/D NTJD4401N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 27 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 22 mV/ °C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V 10 mA VGS(TH) VGS = VDS, ID = 250 mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS 0.6 0.92 1.5 V mV/ °C −2.1 VGS = 4.5 V, ID = 0.63 A 0.29 0.375 VGS = 2.5 V, ID = 0.40 A 0.36 0.445 VDS = 4.0 V, ID = 0.63 A 2.0 W S CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance Reverse Transfer Capacitance COSS VGS = 0 V, f = 1.0 MHz, VDS = 20 V 33 46 13 22 CRSS 2.8 5.0 Total Gate Charge QG(TOT) 1.3 3.0 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.4 td(ON) 0.083 VGS = 4.5 V, VDS = 10 V, ID = 0.63 A pF nC 0.1 0.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W tf ms 0.227 0.786 0.506 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS =0.23 A TJ = 25°C 0.76 TJ = 125°C 0.63 VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.63 A 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.410 1.1 V ms NTJD4401N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.2 VGS = 4.5 V to 2.2 V 1.2 TJ = 25°C VDS ≥ 10 V VGS = 2 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.4 1.8 V 1 0.8 1.6 V 0.6 0.4 1.4 V 0.2 1 0.8 0.6 0.4 TJ = 125°C 0.2 25°C 1.2 V 0.7 TJ = −55°C 0 2 6 4 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.4 1.2 2 0.8 1.6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0 VGS = 4.5 V 0.6 0.5 TJ = 125°C 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 0.2 1.2 1.4 0.7 TJ = 125°C 0.5 0.4 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.2 0.6 0.4 1 0.8 ID, DRAIN CURRENT (AMPS) 1.4 80 ID = 0.63 A VGS = 4.5 V and 2.5 V TJ = 25°C C, CAPACITANCE (pF) VGS = 0 V 1.6 1.4 1.2 1 60 40 Ciss 20 Coss 0.8 0.6 −50 1.2 Figure 4. On−Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = 2.5 V 0.6 Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 2.4 Crss 0 −25 0 25 50 75 100 125 150 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTJD4401N 0.7 5 QG(TOT) IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4 VGS 3 QGS 2 QGD 1 ID = 0.63 A TJ = 25°C 0 0 0.2 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 1.4 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current ORDERING INFORMATION Device NTJD4401NT1 NTJD4401NT1G NTJD4401NT2 NTJD4401NT2G NTJD4401NT4 NTJD4401NT4G Package Shipping† SC−88 3000 / Tape & Reel SC−88 (Pb−Free) 3000 / Tape & Reel SC−88 3000 / Tape & Reel SC−88 (Pb−Free) 3000 / Tape & Reel SC−88 10,000 / Tape & Reel SC−88 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTJD4401N PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 A3 6 5 4 HE C −E− 1 2 3 L b 6 PL 0.2 (0.008) M E M A INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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