Pan Jit BC849W Npn general purpose transistor Datasheet

BC846AW ~ BC850CW
NPN GENERAL PURPOSE TRANSISTORS
CURRENT
30/45/65 Volts
VOLTAGE
150 mWatts
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
0.087(2.20)
0.070(1.80)
• Collector current IC = 100mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
0.087(2.20)
0.078(2.00)
0.004(0.10)MIN.
FEATURES
0.054(1.35)
0.045(1.15)
• Case: SOT-323, Plastic
0.006(0.15)
0.002(0.05)
0.056(1.40)
0.047(1.20)
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
0.044(1.10)
0.035(0.90)
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
Device Marking:
BC846AW=46A
BC847AW=47A
BC848AW=48A
BC846BW=46B
BC847BW=47B
BC848BW=48B
BC847CW=47C BC848CW=48C
BC849BW=49B
BC850BW=50B
BC849CW=49C BC850CW=50C
ABSOLUTE RATINGS
PARAMETER
Symbol
Value
Units
Collector - Emitter Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
VCEO
65
45
30
V
Collector - Base Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
VCBO
80
50
30
V
Emitter - Base Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
VEBO
6.0
6.0
5.0
V
IC
100
mA
Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER
Symbol
Value
Units
Max Power Dissipation (Note 1)
PTOT
150
mW
Thermal Resistance
RθJA
RθJC
400
100
Junction Temperature
TJ
-55 to 150
O
Storage Temperature
TSTG
-55 to 150
O
O
C/W
C
C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
December 17,2010-REV.00
PAGE . 1
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS
PA RA ME TE R
S ym bo l
Te st C o nd i ti o n
MIN.
TYP.
MA X .
Uni ts
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
B C 8 4 6 AW,B W
B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W
B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W
V (B R) C E O IC =1 0 mA , IB =0
65
45
30
-
-
V
C o lle c to r - B as e B re a k d o wn Vo lta g e
B C 8 4 6 AW,B W
B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W
B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W
V (B R) C B O IC =1 0 μA , IE =0
80
50
30
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
B C 8 4 6 AW,B W
B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W
B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W
V ( B R) E B O IE =1 0 μA , IC =0
6.0
6.0
5.0
-
-
V
E mi tte r-B a s e C uto ff C urre nt
IE B O
V E B =5
-
-
100
nA
C o lle c to r-B a s e C uto ff C urre nt
IC B O
V C B =3 0V, IE =0
V C B =3 0V, IE =0 ,T J =1 5 0 O C
-
-
15
5 .0
nA
μA
B C 8 4 6 ~B C 8 4 8 S uffi x " AW"
B C 8 4 6 ~B C 8 5 0 S uffi x " B W"
B C 8 4 7 ~B C 8 5 0 S uffi x " C W"
hFE
IC =1 0 μA , V C E =5 V
-
90
150
270
-
-
B C 8 4 6 ~B C 8 4 8 S uffi x " AW"
B C 8 4 6 ~B C 8 5 0 S uffi x " B W"
B C 8 4 7 ~B C 8 5 0 S uffi x " C W"
hFE
IC =2 .0 mA , V C E =5 V
11 0
200
420
180
290
520
220
450
800
-
D C C urre nt Ga i n
D C C urre nt Ga i n
C o lle c to r - E mi tte r S a tura ti o n Vo lta g e
V C E (S AT)
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB =5 .0 mA
-
-
0 .2 5
0 .6
V
B a se - E mi tte r S a tura ti o n Vo lta g e
V C E (S AT)
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB =5 .0 mA
-
0 .7
0 .9
-
V
B a se - E mi tte r Vo lta g e
V C E (S AT)
IC =2 mA , V C E =5 .0 V
IC =1 0 mA , V C E =5 .0 V
0 .5 8
-
0 .6 6 0
-
0 .7 0
0 .7 7
V
-
-
4 .5
pF
C o lle c to r - B as e C a p a ci ta nce
December 17,2010-REV.00
C CBO
V C B =1 0V, IE =0 , f=1 MH
PAGE . 2
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BC846AW,BC847AW,BC848AW)
300
TJ =150˚ C
VCB=30V
250
TJ=100˚ C
200
10
hFE
ICB0, Collector Current (nA)
100
TJ=25 C
150
100
1
VCE=5V
50
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Collector Current, IC (mA)
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1200
1000
1000
TJ = 25 ˚C
TJ = 100 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 150 ˚C
100
TJ = 25 ˚C
400
VCE=5V
IC/IB=20
TJ = 150 ˚C
200
0
0.01
0.1
1
10
100
10
0.01
1000
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
1200
TJ = 25 ˚C
1000
Cib (EB)
VBE(sat), (mV)
800
Capacitance, C (pF )
TJ = 25 ˚C
TJ = 100 ˚C
600
400
200
IC/IB=20
TJ = 150 ˚C
0
0.01
Cob (CB)
1
0.1
1
10
100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
December 17,2010-REV.00
PAGE . 3
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW)
500
VCE=5V
TJ =150˚ C
450
VCB=30V
400
350
10
TJ=100˚ C
300
hFE
ICB0, Collector Current (nA)
100
TJ =25 ˚C
250
200
1
150
100
50
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
1000
Collector Current, IC (mA)
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1000
1200
1000
TJ = 25 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 100 ˚C
TJ = 150 ˚C
100
400
TJ = 25 ˚C
200
0
0.01
0.1
IC/IB=20
VCE=5V
TJ = 150 ˚C
1
10
100
10
0.01
1000
0.1
1
100
1000
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
1200
10
1000
Cib (EB)
800
TJ = 100 ˚C
600
400
200
Cob (CB)
IC/IB=20
TJ = 150 ˚C
0
0.01
TJ = 25 ˚C
Capacitance, C (pF )
TJ = 25 ˚C
VBE(sat), (mV)
10
Collector Current, IC (mA)
1
0.1
1
10
100
0.1
Collector Current, IC (mA)
Fig. 5. Typical VBE(SAT) vs. Collector Current
December 17,2010-REV.00
1
10
100
Reverse Voltage (V)
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 4
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW)
1200
100
TJ =150˚ C
1000
10
hFE
ICB0, Collector Current (nA)
VCE=5V
VCB=30V
800
TJ =100˚ C
600
TJ =25 C
400
1
200
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Collector Current, IC, (mA)
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1000
1200
1000
TJ = 25 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 100 ˚C
TJ = 150 ˚C
100
400
TJ = 25 ˚C
200
VCE=5V
TJ = 150 ˚C
0
0.01
0.1
1
10
100
IC/IB=20
10
0.01
1000
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
1200
10
1000
TJ = 25 ˚C
Cib (EB)
VBE(sat), (mV)
800
Capacitance, C (pF )
TJ = 25 ˚C
TJ = 100 ˚C
600
400
Cob (CB)
IC/IB=20
200
TJ = 150 ˚C
0
0.01
1
0.1
1
10
100
0.1
Collector Current, IC (mA)
Fig. 5. Typical VBE(SAT) vs. Collector Current
December 17,2010-REV.00
1
10
100
Reverse Voltage (V)
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 5
BC846AW ~ BC850CW
MOUNTING PAD LAYOUT
SOT-323
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
December 17,2010-REV.00
PAGE . 6
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