ON MMBT4401WT1 Switching transistor npn silicon Datasheet

MMBT4401WT1
Preferred Device
Switching Transistor
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model; 4 kV,
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Machine Model; 400 V
COLLECTOR
3
• Pb−Free Package is Available
1
BASE
MAXIMUM RATINGS
Rating
2
EMITTER
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
60
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RJA
833
°C/W
SC−70 (SOT−323)
CASE 419
STYLE 3
TJ, Tstg
−55 to +150
°C
MARKING DIAGRAM
Collector Current − Continuous
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1
2
2X D
2X = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
MMBT4401WT1
MMBT4401WT1G
Package
Shipping†
SC−70
3000/Tape & Reel
SC−70
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 1
1
Publication Order Number:
MMBT4401WT1/D
MMBT4401WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
IBEV
−
0.1
Adc
20
40
80
100
40
−
−
−
300
−
−
−
0.4
0.75
0.75
−
0.95
1.2
ICEX
−
0.1
Adc
OFF CHARACTERISTICS
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
−
MHz
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.5
pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
k
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10− 4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
−
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mhos
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
tr
−
20
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
30
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
+16 V
0
−2.0 V
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
200 +16 V
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
0
1.0 k
< 2.0 ns
−14 V
CS* < 10 pF
1.0 k
< 20 ns
−4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
200 CS* < 10 pF
MMBT4401WT1
TRANSIENT CHARACTERISTICS
25°C
100°C
30
10
7.0
5.0
20
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
Cobo
10
7.0
5.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
REVERSE VOLTAGE (VOLTS)
20 30
QT
2.0
1.0
0.7
0.5
0.3
0.2
Ccb
3.0
2.0
0.1
VCC = 30 V
IC/IB = 10
0.1
50
QA
10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitances
100
IC/IB = 10
70
70
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
20
t, TIME (ns)
t, TIME (ns)
VCC = 30 V
IC/IB = 10
tr
50
30
20
10
7.0
7.0
10
20
30
50
70
100
200
300
5.0
500
tf
30
10
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Rise and Fall Times
300
300
500
100
ts′ = ts − 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
70
50
t f , FALL TIME (ns)
200
t s′, STORAGE TIME (ns)
500
Figure 4. Charge Data
100
5.0
300
100
70
IC/IB = 20
30
20
IC/IB = 10
10
50
7.0
30
10
20
30
50
70
100
200
300
5.0
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
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3
300
500
MMBT4401WT1
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k
IC = 50 A, RS = 4.0 k
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
f = 1.0 kHz
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
6.0
4.0
IC = 50 A
IC = 100 A
IC = 500 A
IC = 1.0 mA
6.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
10
20
50
0
100
50
100 200
500 1.0k 2.0k 5.0k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k 100k
Figure 10. Source Resistance Effects
Figure 9. Frequency Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401WT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
300
50k
hie , INPUT IMPEDANCE (OHMS)
hfe , CURRENT GAIN
200
100
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
70
50
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
20k
10k
5.0k
2.0k
1.0k
500
5.0 7.0 10
0.2
0.3
0.5 0.7
1.0
2.0
3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
10
5.0 7.0 10
100
7.0
5.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
IC, COLLECTOR CURRENT (mA)
hoe, OUTPUT ADMITTANCE ( mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10−4 )
20
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
50
20
10
2.0
1.0
0.1
5.0 7.0 10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
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4
5.0 7.0 10
MMBT4401WT1
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
1.0
25°C
0.7
0.5
−55 °C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50
100 200
500
Figure 16. Collector Saturation Region
1.0
+0.5
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.6
0
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
0.8
VBE @ VCE = 10 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1 0.2
0.5
50
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
VC for VCE(sat)
−0.5
−1.0
−1.5
−2.0
100 200
−2.5
0.1 0.2
500
Figure 17. “On” Voltages
VB for VBE
0.5
50
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
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5
MMBT4401WT1
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
B
S
1
2
D
G
C
0.05 (0.002)
J
N
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm inches
SC−70/SOT−323
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT4401WT1/D
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