IRF JANSR2N7474U2 Radiation hardened power mosfet surface mount (smd-2) Datasheet

PD-93816D
IRHNA57264SE
JANSR2N7474U2
250V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
REF: MIL-PRF-19500/684
5
TECHNOLOGY
™
Product Summary
Part Number
IRHNA57264SE
Radiation Level
100K Rads (Si)
RDS(on)
0.06Ω
ID
QPL Part Number
45A JANSR2N7474U2
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
SMD-2
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID@ V GS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
45
28
180
250
2.0
±20
222
45
250
5.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
3.3 (Typical)
g
For footnotes refer to the last page
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1
04/25/06
IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
—
0.28
—
V/°C
—
—
0.06
Ω
2.5
27
—
—
—
—
—
—
4.5
—
10
25
V
S( )
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
165
45
75
35
125
80
65
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5045
781
70
—
—
—
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 28A
Ã
Ω
BVDSS
VDS = VGS, ID = 1.0mA
VDS ≥ 15V, IDS = 28A Ã
VDS = 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 125V
VDD = 125V, ID = 45A,
VGS =12V, RG = 2.35Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
45
180
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
560
8.6
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 45A, VGS = 0V Ã
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
1.6
0.5
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA57264SE, JANSR2N7474U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-2)
Diode Forward Voltage
„
Units
Test Conditions
Min
Max
250
2.0
—
—
—
—
4.5
100
-100
10
nA
µA
VGS = 0V, ID = 1.0mA
V GS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 200V, VGS=0V
—
0.061
Ω
VGS = 12V, ID = 31A
—
0.060
Ω
VGS = 12V, ID = 31A
—
1.2
V
VGS = 0V, ID = 45A
V
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm2))
36.7
59.8
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
39.5
250
250
250
250
250
32.5
250
250
250
250
240
28.4
250
250
225
175
50
Energy
(MeV)
309
341
350
300
250
VDS
200
Br
I
Au
150
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
1000
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
10
1
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 15
50V
20µs PULSE WIDTH
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
100
Fig 2. Typical Output Characteristics
1000
5
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
5.0V
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
49A
45A
ID = 44.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
8000
Ciss
6000
4000
Coss
2000
Crss
0
1
10
20
VGS , Gate-to-Source Voltage (V)
10000
IRHNA57264SE, JANSR2N7474U2
44.5A
ID = 45A
49A
VDS = 200V
VDS = 125V
VDS = 50V
15
10
5
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
80
120
160
200
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V GS = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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10
100µs
0.1
1.4
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
50
VGS
40
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
30
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
150
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHNA57264SE, JANSR2N7474U2
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
400
ID
20A
28.5A
BOTTOM
45A
TOP
300
200
100
0
25
50
75
100
125
150
StartingJT , Junction Temperature
( ° C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.22mH
Peak IL = 45A, VGS = 12V
 ISD ≤ 45A, di/dt ≤ 274A/µs,
VDD ≤ 250V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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