TO -2 20A B BT138-600E 4Q Triac 30 August 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • • • • • Direct triggering from low power drivers and logic ICs High blocking voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications • • General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 95 A Tj junction temperature - - 125 °C IT(RMS) RMS on-state current - - 12 A - 2.5 10 mA - 4 10 mA full sine wave; Tmb ≤ 99 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT138-600E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; - 5 10 mA - 11 25 mA - 150 - V/µs Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 sym051 T1 G 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT138-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT138-600E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code BT138-600E BT138-600E/DG BT138-600E Product data sheet BT138-600EDG All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 2 / 13 BT138-600E NXP Semiconductors 4Q Triac 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1; Min Max Unit - 600 V - 12 A - 95 A - 105 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I t for fusing tp = 10 ms; sine-wave pulse - 45 A s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs - 50 A/µs - 50 A/µs - 10 A/µs 2 2 2 T2+ G+ IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C BT138-600E Product data sheet over any 20 ms period All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 3 / 13 BT138-600E NXP Semiconductors 4Q Triac 003aaj938 15 IT(RMS) (A) 12 IT(RMS) 99 °C (A) 40 9 30 6 20 3 10 0 -50 Fig. 1. 003aaj940 50 0 50 100 Tmb (°C) 0 150 RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. 10-2 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 99 °C RMS on-state current as a function of surge duration; maximum values 003aaj942 20 Ptot (W) 16 12 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 Tmb(max) (°C) 101 α = 180° 120° α 95 90° 107 60° 30° 8 113 4 119 0 0 3 6 9 12 IT(RMS) (A) 125 15 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 4 / 13 BT138-600E NXP Semiconductors 4Q Triac 003aaj944 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f 0 Tj(init) = 25 °C max 1 102 10 103 number of cycles (n) f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aaj945 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 5 / 13 BT138-600E NXP Semiconductors 4Q Triac 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 6 - - 1.5 K/W half cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 003aaj343 10 Zth(j-mb) (K/W) 1 (1) 10-1 (2) PD 10-2 10-3 10-5 tp 10-4 10-3 10-2 10-1 1 tp (s) t 10 (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 6 / 13 BT138-600E NXP Semiconductors 4Q Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA - 4 10 mA - 5 10 mA - 11 25 mA - - 30 mA - - 40 mA - - 30 mA - - 40 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V 0.25 0.4 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA VDM = 402 V; Tj = 125 °C; (VDM = 67% - 150 - V/µs - 2 - µs Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 16 A; VD = 600 V; IG = 0.1 A; dIG/ time dt = 5 A/µs BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 7 / 13 BT138-600E NXP Semiconductors 4Q Triac 003aaj946 3 IGT IGT(25°C) 003aaj947 3 IL IL(25°C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 -50 1 (4) 0 50 100 Tj (°C) 0 -50 150 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aaj948 3 003aaj949 40 IT (A) IH IH(25°C) 30 2 20 1 (1) (2) (3) 10 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 150 0 0.5 1 1.5 2 2.5 VT (V) Vo = 1.175 V; Rs = 0.0316 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 8 / 13 BT138-600E NXP Semiconductors 4Q Triac 003aaj950 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 9 / 13 BT138-600E NXP Semiconductors 4Q Triac 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 12. Package outline TO-220AB (SOT78) BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 10 / 13 BT138-600E NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. 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BT138-600E Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 12 / 13 BT138-600E NXP Semiconductors 4Q Triac 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................6 10 Characteristics ....................................................... 7 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 August 2013 BT138-600E Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2013 © NXP N.V. 2013. All rights reserved 13 / 13