NE592 Video Amplifier The NE592 is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of 100 and 400 without external components and adjustable gains from 400 to 0 with one external resistor. The input stage has been designed so that with the addition of a few external reactive elements between the gain select terminals, the circuit can function as a high-pass, low-pass, or band-pass filter. This feature makes the circuit ideal for use as a video or pulse amplifier in communications, magnetic memories, display, video recorder systems, and floppy disk head amplifiers. Now available in an 8-pin version with fixed gain of 400 without external components and adjustable gain from 400 to 0 with one external resistor. http://onsemi.com MARKING DIAGRAMS 8 1 Features • • • • • • • SOIC−8 D SUFFIX CASE 751 NE592 ALYW G 1 120 MHz Unity Gain Bandwidth Adjustable Gains from 0 to 400 Adjustable Pass Band No Frequency Compensation Required Wave Shaping with Minimal External Components MIL-STD Processing Available Pb−Free Packages are Available 8 1 NE592N8 AWL YYWWG PDIP−8 N SUFFIX CASE 626 1 Applications • • • • • 14 Floppy Disk Head Amplifier Video Amplifier Pulse Amplifier in Communications Magnetic Memory Video Recorder Systems 1 SOIC−14 D SUFFIX CASE 751A 1 +V R1 R2 R8 R10 1 R9 Q6 14 PDIP−14 N SUFFIX CASE 646 Q3 OUTPUT 1 R11 INPUT 1 INPUT 2 Q1 Q2 G1A R12 G1B R3 OUTPUT 2 A L, WL Y, YY W, WW G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package R5 G2A G2B Q7A NE592N14 AWLYYWWG 1 Q5 Q4 NE592D14G AWLYWW Q7B R7A ORDERING INFORMATION Q8 R7B Q9 R15 R16 Q10 See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Q11 R13 R14 -V Figure 1. Block Diagram © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 4 1 Publication Order Number: NE592/D NE592 PIN CONNECTIONS D, N Packages INPUT 2 1 D, N Packages 14 INPUT 2 1 8 INPUT 1 G1B GAIN SELECT INPUT 1 NC 2 13 NC G2B GAIN SELECT 3 12 G2A GAIN SELECT G1B GAIN SELECT 4 11 G1A GAIN SELECT V- 5 10 V+ NC 6 9 NC OUTPUT 2 7 8 OUTPUT 1 2 7 G1A GAIN SELECT V- 3 6 V+ 4 5 OUTPUT 1 OUTPUT 2 (Top View) (Top View) MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.) Symbol Value Unit Supply Voltage VCC "8.0 V Differential Input Voltage VIN "5.0 V Common-Mode Input Voltage VCM "6.0 V Output Current Rating IOUT 10 mA Operating Ambient Temperature Range TA 0 to +70 °C Operating Junction Temperature TJ 150 °C TSTG 65 to +150 °C Storage Temperature Range Maximum Power Dissipation, TA = 25°C (Still Air) (Note 1) D-14 Package D-8 Package N-14 Package N-8 Package Thermal Resistance, Junction−to−Ambient D-14 Package D-8 Package N-14 Package N-8 Package PD MAX W 0.98 0.79 1.44J1.17 RqJA 145 182 100 130 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Derate above 25°C at the following rates: D-14 package at 6.9 mW/°C D-8 package at 5.5 mW/°C N-14 package at 10 mW/°C N-8 package at 7.7 mW/°C. http://onsemi.com 2 NE592 DC ELECTRICAL CHARACTERISTICS (VSS = "6.0 V, VCM = 0, typicals at TA = +25°C, min and max at 0°C v TA v 70°C, unless otherwise noted. Recommended operating supply voltages VS = "6.0 V.) Characteristic Differential Voltage Gain Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Input Resistance Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Input Capacitance Test Conditions Symbol RL = 2.0 kW, VOUT = 3.0 VP-P AVOL RIN − TA = 25°C 0°C v TA v 70°C Min Typ Max 250 80 400 100 600 120 − 10 8.0 4.0 30 − − − − Unit V/V kW Gain 2 (Note 4) CIN − 2.0 − pF Input Offset Current TA = 25°C 0°C v TA v 70°C IOS − − 0.4 − 5.0 6.0 mA Input Bias Current TA = 25°C 0°C v TA v 70°C IBIAS − − 9.0 − 30 40 mA Input Noise Voltage BW 1.0 kHz to 10 MHz VNOISE − 12 − mVRMS Input Voltage Range − VIN "1.0 − − V VCM "1.0 V, f < 100 kHz, TA = 25°C VCM "1.0 V, f < 100 kHz, 0°C v TA v 70°C VCM "1.0 V, f < 5.0 MHz CMRR 60 50 86 − − − dB − 60 − DVS = "0.5 V PSRR 50 70 − − − − − − − 0.35 − 1.5 1.5 0.75 1.0 Common-Mode Rejection Ratio Gain 2 (Note 4) Supply Voltage Rejection Ratio Gain 2 (Note 4) Output Offset Voltage Gain 1 Gain 2 (Note 4) Gain 3 (Note 5) Gain 3 (Note 5) Output Common-Mode Voltage Output Voltage Swing Differential RL = R RL = R RL = R, TA = 25°C RL = R, 0°C v TA v 70°C V RL = R, TA = 25°C VCM 2.4 2.9 3.4 V RL = 2.0 kW, TA = 25°C RL = 2.0 kW, 0°C v TA v 70°C VOUT 3.0 2.8 4.0 − − − V − ROUT − 20 − W RL = R, TA = 25°C RL = R, 0°C v TA v 70°C ICC − − 18 − 24 27 mA Output Resistance Power Supply Current VOS dB AC ELECTRICAL CHARACTERISTICS (TA = +25°C VSS = "6.0 V, VCM = 0, unless otherwise noted. Recommended operating supply voltages VS = "6.0 V.) Characteristic Test Conditions Symbol − BW Bandwidth Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Rise Time Gain 1 (Note 2) Gain 2 (Notes 3 and 4) VOUT = 1.0 VP−P Propagation Delay Gain 1 (Note 2) Gain 2 (Notes 3 and 4) VOUT = 1.0 VP−P 2. 3. 4. 5. tR tPD Gain select Pins G1A and G1B connected together. Gain select Pins G2A and G2B connected together. Applies to 14-pin version only. All gain select pins open. http://onsemi.com 3 Min Typ Max − − 40 90 − − − − 10.5 4.5 12 − − − 7.5 6.0 10 − Unit MHz ns ns NE592 100 7.0 GAIN 2 VS = +6V TA = 25oC 90 80 OUTPUT VOLTAGE SWING − Vpp 70 60 50 40 30 20 10 0 10k 100k 1M 10M 1.6 VS = +6V TA = 25oC RL = 1kW 6.0 5.0 1.0 0.8 0.4 0 1.0 Figure 2. Common−Mode Rejection Ratio as a Function of Frequency -0.2 1 5 10 50 100 OUTPUT VOLTAGE − V 12 Figure 4. Pulse Response 1.6 GAIN 2 TA = 25oC RL = 1kW 3 4 5 6 7 8 VS = +8V 1.0 VS = +6V 0.8 VS = +3V 0.6 0.4 0.2 0 1.06 1.04 1.02 1.00 GAIN 2 0.98 0.96 0.94 GAIN 1 0.92 0.90 0 10 20 30 40 50 60 70 TEMPERATURE − oC Figure 8. Voltage Gain as a Function of Temperature Tamb = 0oC 0.8 TA = 25oC 0.6 0.4 TA = 70oC 0.2 0 5 10 15 20 25 30 35 TIME − ns -15 -10 -5 0 5 10 15 20 25 30 35 TIME − ns Figure 6. Pulse Response as a Function of Supply Voltage SINGLE ENDED VOLTAGE GAIN − dB VS = +6V 1.08 1.0 -0.4 0 SUPPLY VOLTAGE − +V 1.10 1.2 -0.2 -0.4 -15 -10 -5 Figure 5. Supply Current as a Function of Temperature GAIN 2 VS = +6V RL = 1kW 1.4 Figure 7. Pulse Response as a Function of Temperature 1.4 60 GAIN 2 VS = +6V RL = 1kW 50 40 30 TA = −55oC 20 TA = 25oC 10 TA = 125oC 0 Tamb = 25oC 1.3 RELATIVE VOLTAGE GAIN 8 10 15 20 25 30 35 Figure 3. Output Voltage Swing as a Function of Frequency 1.2 16 5 TIME − ns 1.4 20 0 FREQUENCY − MHz -0.2 RELATIVE VOLTAGE GAIN -0.4 -15 -10 -5 500 1000 1.6 24 GAIN 1 0.2 2.0 0 TA = 25oC GAIN 2 0.6 3.0 FREQUENCY − Hz SUPPLY CURRENT − mA 1.2 4.0 100M 28 VS = +6V TA = 25oC RL = 1k 1.4 OUTPUT VOLTAGE − V COMMON-MODE REJECTION RATIO − dB TYPICAL PERFORMANCE CHARACTERISTICS 1.2 1.1 GAIN 2 1.0 0.9 0.8 GAIN 1 0.7 0.6 0.5 0.4 -10 1 5 10 50 100 500 1000 FREQUENCY − MHz Figure 9. Gain vs. Frequency as a Function of Temperature http://onsemi.com 4 3 4 5 6 7 8 SUPPLY VOLTAGE − +V Figure 10. Voltage Gain as a Function of Supply Voltage NE592 1000 60 0.2mF GAIN 2 TA = 25oC RL = 1kW 50 40 14 12 11 592 1 3 30 4 8 0.2mF 7 VS = +8V 20 51W VS = +6V 10 0 -10 DIFFERENTIAL VOLTAGE GAIN − V/V SINGLE ENDED VOLTAGE GAIN − dB TYPICAL PERFORMANCE CHARACTERISTICS 51W VS = +3V 1 5 10 RADJ 1kW 1kW VS = +6V TA = 25oC 50 100 VS = +6V f = 100kHz TA = 25oC FIGURE 2 100 10 1 .1 .01 1 500 1000 10 Figure 11. Gain vs. Frequency as a Function of Supply Voltage VS = +6V 19 18 17 16 15 50 40 30 20 10 -20 20 60 100 140 TEMPERATURE − oC 70 VS = +6V TA = 25oC INPUT RESISTANCE − KΩ OUTPUT VOLTAGE SWING − Vpp 20 40 60 80 100 120 140 160 180 200 5.0 4.0 3.0 2.0 VOLTAGE 4.0 3.0 CURRENT 2.0 1.0 50 40 30 20 10 0 0 5K 10K Figure 17. Output Voltage Swing as a Function of Load Resistance 4.0 5.0 6.0 7.0 SUPPLY VOLTAGE − +V 8.0 Figure 16. Output Voltage and Current Swing as a Function of Supply Voltage 100 GAIN 2 VS = +6V 60 1.0 50 100 500 1K LOAD RESISTANCE − W 5.0 3.0 Figure 15. Differential Overdrive Recovery Time 7.0 10 TA = 25oC 6.0 DIFFERENTIAL INPUT VOLTAGE − mV Figure 14. Supply Current as a Function of Temperature 6.0 1M 0 0 INPUT NOISE VOLTAGE −μ Vrms -60 10K 100K 7.0 VS = +6V TA = 25oC GAIN 2 60 0 14 1K Figure 13. Voltage Gain as a Function of RADJ (Figure 2) OUTPUT VOLTAGE SWING − V OR OUTPUT SINK CURRENT − mA OVERDRIVE RECOVERY TIME − ns SUPPLY CURRENT − mA Figure 12. Voltage Gain Adjust Circuit 70 21 20 100 RADJ − W FREQUENCY − MHz GAIN 2 VS = +6V TA = 25oC BW = 10MHz 90 80 70 60 50 40 30 20 10 0 -60 -20 0 20 60 100 TEMPERATURE − oC 140 Figure 18. Input Resistance as a Function of Temperature http://onsemi.com 5 1 10 100 1K SOURCE RESISTANCE − W 10K Figure 19. Input Noise Voltage as a Function of Source Resistance NE592 TYPICAL PERFORMANCE CHARACTERISTICS 0 GAIN 2 VS = +6V TA = 25oC -5 PHASE SHIFT − DEGREES PHASE SHIFT − DEGREES 0 -10 -15 -20 VS = +6V TA = 25oC -50 -100 -150 GAIN 2 -200 GAIN 1 -250 -300 -350 -25 0 1 2 3 4 5 6 7 8 9 1 10 10 100 FREQUENCY − MHz 1000 FREQUENCY − MHz Figure 20. Phase Shift as a Function of Frequency GAIN 1 VOLTAGE GAIN − dB 50 40 VS = +6V Tamb = 25oC RL = 1KW VS = +6V TA = 25oC GAIN 3 40 30 VOLTAGE GAIN − dB 60 Figure 21. Phase Shift as a Function of Frequency GAIN 2 30 20 10 20 10 0 -10 -20 -30 0 -40 1 10 100 -50 .01 1000 FREQUENCY − MHz .1 1 10 100 FREQUENCY − MHz Figure 23. Voltage Gain as a Function of Frequency Figure 22. Voltage Gain as a Function of Frequency TEST CIRCUITS (TA = 25°C, unless otherwise noted.) VIN 592 51W RL VOUT 51W 0.2mF ein 592 0.2mF eout eout 51W 1000 51W 1kW 1kW Figure 24. Test Circuits http://onsemi.com 6 NE592 +6 2re 11 14 NOTE: V 0(s) v 1(s) V1 [ 1.4 @ 10 4 Z(S) ) 2re [ 1.4 @ 104 Z(S) ) 32 10 V0 592 1 5 4 7 Z -6 +6 Basic Configuration 0.2mF +5 +6 14 10 14 11 4 10 8 529 7 V1 Q 7 2 5 7 0.2mF 5 C 2KW Q -6 3 NOTE: 6 For frequency F1 << 1/2 π (32) C -6 V DIFFERENTIATOR/AMPLIFIER ZERO CROSSING DETECTOR O ] 1.4 x 10 4C dVi dT Differentiation with High Common-Mode Noise Rejection Disc/Tape Phase-Modulated Readback Systems Figure 25. Typical Applications R V0 (s) TRANSFER V1 (s) FUNCTION FILTER TYPE Z NETWORK L 1.4 LOW PASS R C 1.4 HIGH PASS R L C BAND PASS 1.4 L L R 10 4 10 4 ƪ ƫ ƪ ƫ 1 s ) RńL s s ) 1ńRC 10 4 ƪ 10 4 ƪ ƫ s s 2 ) RńLs ) 1ńLC L R BAND REJECT C NOTES: In the networks above, the R value used is assumed to include 2re, or approximately 32W. S = jW W = 2πf Figure 26. Filter Networks http://onsemi.com 7 2KW V0 1 4 AMPLITUDE: 1-10 mV p-p FREQUENCY: 1-4 MHz READ HEAD 592 8 5 4 10 8 1 592 1 9 11 1.4 R s 2 ) 1ńLC ƫ s 2 ) 1ńLC ) sńRC NE592 ORDERING INFORMATION Device Temperature Range Package NE592D8 SOIC−8 NE592D8G SOIC−8 (Pb−Free) NE592D8R2 SOIC−8 NE592D8R2G SOIC−8 (Pb−Free) NE592N8 98 Units/Rail 2500 / Tape & Reel PDIP−8 NE592N8G NE592D14 Shipping† PDIP−8 (Pb−Free) 0 to +70°C 50 Units/Rail SOIC−14 NE592D14G SOIC−14 (Pb−Free) NE592D14R2 SOIC−14 NE592D14R2G SOIC−14 (Pb−Free) NE592N14 PDIP−14 NE592N14G PDIP−14 (Pb−Free) 55 Units/Rail 2500 / Tape & Reel 25 Units/Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 8 NE592 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AH −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 1 0.25 (0.010) M Y M 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 _ 8 _ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NE592 PACKAGE DIMENSIONS PDIP−8 N SUFFIX CASE 626−05 ISSUE L 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 −B− 1 4 F −A− NOTE 2 L C J −T− N SEATING PLANE D H M K G 0.13 (0.005) M T A M B M http://onsemi.com 10 DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC −−− 10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC −−− 10_ 0.030 0.040 NE592 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− P 7 PL 0.25 (0.010) M 7 1 G −T− D 14 PL 0.25 (0.010) T B S A DIM A B C D F G J K M P R J M K M F R X 45 _ C SEATING PLANE B M S SOLDERING FOOTPRINT* 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 NE592 PACKAGE DIMENSIONS PDIP−14 CASE 646−06 ISSUE P 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B A F L N C −T− SEATING PLANE H G D 14 PL J K 0.13 (0.005) M DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 −−− 10 _ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 −−− 10 _ 0.38 1.01 M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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