Chenmko CHM4269JPT Dual enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 40 Volts
P-channel: VOLTAGE 40 Volts
CHM4269JPT
CURRENT 6.1 Ampere
CURRENT 5.2 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* Super high dense cell design for extremely low RDS(ON).
* Lead free product is acquired.
* High power and current handing capability.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* N-Channel & P-Channel Enhancement in the package
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
D1 D1 D2 D2
5
6.20 (0.244)
5.80 (0.228)
SO-8
Dimensions in millimeters
1
4
S1 G1 S2 G2
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
TA = 25°C unless otherwise noted
Parameter
N-Channel
P-Channel
Units
VDSS
Drain-Source Voltage
40
-40
V
VGSS
Gate-Source Voltage
±20
±20
V
6.1
-5.2
20
-20
Maximum Drain Current - Continuous
ID
A
- Pulsed
(Note 3)
PD
Maximum Power Dissipation at Ta=25°C
TJ
TSTG
2000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
62.5
°C/W
2007-06
ELECTRICAL CHARACTERISTIC ( CHM4269JPT )
N-Channel Electrical Characteristics T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
40
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 40 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
1
VGS=10V, ID=6A
32
VGS=4.5V, ID=5A
46
VDS =5V, ID = 6A
3
mΩ
S
Dynamic Characteristics
Ciss
1050
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 20V, VGS = 0V,
f = 1.0 MHz
155
pF
95
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
VDS=20V, ID=6A
VGS=10V
20.5
27
nC
3.5
4.0
t on
Turn-On Time
V DD= 20V
14
30
tr
Rise Time
I D = 6A , VGS = 10 V
10
20
t off
Turn-Off Time
RGEN= 3 Ω
17
35
tf
Fall Time
18
35
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 1.0A , VGS = 0 V (Note 2)
(Note 1)
1.0
A
1.0
V
ELECTRICAL CHARACTERISTIC ( CHM4269JPT )
P-Channel Electrical Characteristics T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
-40
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -40 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
-1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
-3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = -250 µA
-1
VGS=-10V, ID=-5A
43
VGS=-4.5V, ID=-2A
65
VDS = -5V , ID = -4.8A
3
mΩ
S
Dynamic Characteristics
Ciss
1115
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -20V, VGS = 0V,
f = 1.0 MHz
205
pF
120
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
VDS=-20V, ID=-5A
VGS=-10V
20
26
nC
3.3
4.1
t on
Turn-On Time
V DD= -20V
12
25
tr
Rise Time
I D = -5A , VGS = -10 V
5
10
t off
Turn-Off Time
RGEN= 3 Ω
40
80
tf
Fall Time
10
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = -1.0A , VGS = 0 V (Note 2)
(Note 1)
-1.0
A
-1.0
V
RATING CHARACTERISTIC CURVES ( CHM4269JPT )
N-Channel Typical Electrical Characteristics
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
30
20
16
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
24
V G S =10,5,4.5V
18
VG S =4.0V
12
6
12
8
TJ=125°C
VG S =3.5V
0
0
TJ=-55°C
0
4.0
3.0
2.0
1.0
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
2.0
4.0
4.5
VGS=6V
ID=10A
R DS(on) , NORMALIZED
8
6
4
2
0
0
4
8
12
16
Qg , TOTAL GATE CHARGE (nC)
20
24
Figure 5. Gate Threshold Variation with
Temperature
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
VGS , GATE TO SOURCE VOLTAGE (V)
3.5
2.2
VDS=20V
ID=8A
THRESHOLD VOLTAGE
3.0
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
Vth , NORMALIZED GATE-SOURCE
2.5
VGS , GATE-TO-SOURCE VOLTAGE (V)
10
1.3
TJ=25°C
4
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
TJ , JUNCTION T EMPERATURE (°C)
150
200
RATING CHARACTERISTIC CURVES ( CHM4269JPT )
P-Channel Typical Electrical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
30
25
VG S =-10,-6,-5,-4.5V
20
-I D , DRAIN CURRENT (A)
-I D , DRAIN CURRENT (A)
24
VG S =-4.0V
18
12
VG S =-3.5V
6
15
10
TJ=125°C
TJ=-55°C
VG S =-3.0V
0
0
1.0
4.0
2.0
3.0
-VDS , DRAIN-TO-SOURCE VOLTAGE (V)
0
5.0
1.5
R DS(on) , NORMALIZED
6
4
2
0
4
8
12
Qg , TOTAL GATE CHARGE (nC)
16
20
Figure 5. Gate Threshold Variation with
Temperature
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
-VGS , GATE TO SOURCE VOLTAGE (V)
VGS=-5V
ID=-10A
1.9
8
0
THRESHOLD VOLTAGE
5.0
2.2
VDS=-20V
ID=-5A
Vth , NORMALIZED GATE-SOURCE
3.0
4.0
2.0
-VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
10
1.3
TJ=25°C
5
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
TJ , JUNCTION T EMPERATURE (°C)
150
200
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