FJP3305 FJP3305 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 700 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A 400 V 9 V IB Base Current 2 A PC Collector Dissipation (TC=25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=500µA, IE=0 Min. 700 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 ICBO Collector Cut-off Current VCB=700V, IE=0 Emitter Cut-off Current VEB=9V, IC=0 IEBO hFE1 hFE2 VCE(sat) * DC Current Gain Collector-Emitter Saturation Voltage Typ. Max. V 9 VCE=5V, IC=1A 19 VCE=5V, IC=2A 8 V Base-Emitter On Voltage 1 µA 1 µA 35 40 IC=1A, IB=0.2A 0.5 IC=2A, IB=0.5A 0.6 V 1 V IC=1A, IB=0.2A 1.2 V IC=2A, IB=0.5A 1.6 IC=4A, IB=1A VBE(sat) Units V fT Current Gain Bandwidth Product VCE=5V, IC=1A Cob Output Capacitance VCB=10V, f=1MHz tON Turn On Time tSTG Storage Time tF Fall Time VCC=125V, IC=2A=5IB1=-5IB2 RL=62.5Ω 4 V V MHz 65 pF 0.8 µs 4 µs 0.9 µs * Pulse test: PW≤300µs, Duty Cycle≤2% hFE Classification Classification R O hFE2 19 ~ 28 26 ~ 35 ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FJP3305 Typical Characteristics 5.0 100 VCE = 5V IC [A], COLLECTOR CURRENT 4.5 O 4.0 IB = 300mA hFE, DC CURRENT GAIN 3.5 3.0 2.5 IB = 100mA 2.0 1.5 Ta = 75 C O IB = 50mA 1.0 Ta = 125 C O O Ta = - 25 C Ta = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristics 10 VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O O Ta = 75 C Ta = 125 C hFE, DC CURRENT GAIN 10 Figure 2. DC Current Gain(R-Grade) 100 O Ta = - 25 C O Ta = 25 C 10 1 0.01 0.1 1 10 IC = 4 IB O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 0.1 IC [A], COLLECTOR CUTRRENT 1 10 IC [A], COLLECTOR CURRENT Figure 3. DC Current Gain(O-Grade) Figure 4. Saturation Voltage(R-Grade) 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CUTRRENT O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 0.1 1 IC [A], COLLECTOR CURRENT Figure 5. Saturation Voltage(O-Grade) ©2004 Fairchild Semiconductor Corporation 10 IC = 4 IB O 1 Ta = 25 C O Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 6. Saturation Voltage(R-Grade) Rev. A, March 2004 FJP3305 Typical Characteristics (Continued) 10 10 tF & tSTG [µ s], SWITCHING TIME VCE(sat) [V], SATURATION VOLTAGE IC = 4 IB O Ta = 25 C O 1 Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 0.1 1 tSTG 1 tF 0.1 IB1 = - IB2 = 0.4A VCC = 125V 0.01 0.1 10 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 7. Saturation Voltage(O-Grade) Figure 8. Switching Time 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 100 IB1=2A, RB2=0 1ms IC (Pulse) 10 500µs 5ms IC (DC) 1 0.1 O TC = 25 C Single Pulse VCC=50V, L=1mH 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 0.01 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area 100 PC[W], POWER DISSIPATION 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 11. Power Derating ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FJP3305 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, March 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ FACT™ i-Lo™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10