TO -22 0 F BYT79X-600 Rectifier diode ultrafast 27 May 2015 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package 2. Features and benefits • • • • • • Fast switching Low thermal resistance Soft recovery characteristic Low forward voltage drop Low switching loss High thermal cycling performance 3. Application information • • Output rectifiers in high frequency switched-mode power supplies Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 15 A - - 30 A - - 143 A - - 130 A IF = 15 A; Tj = 25 °C; Fig. 4 - 1.16 1.38 V IF = 15 A; Tj = 150 °C - 1.01 1.2 V δ = 0.5 ; Th ≤ 49 °C; Square-wave; Fig. 1; Fig. 2 IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 49 °C; current Square-wave IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal waveform tp = 10 ms; Tj(init) = 25 °C; sinusoidal waveform Static characteristics VF forward voltage Scan or click this QR code to view the latest information for this product BYT79X-600 NXP Semiconductors Rectifier diode ultrafast Symbol Parameter Conditions Min Typ Max Unit IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs; - 50 60 ns Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 5 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol K mb A 001aaa020 2 A anode mb n.c. mounting base; isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number BYT79X-600 BYT79X-600 Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage Square-wave; δ = 1.0 - 600 V IF(AV) average forward current δ = 0.5 ; Th ≤ 49 °C; Square-wave; - 15 A - 30 A - 143 A - 130 A Fig. 1; Fig. 2 IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 49 °C; Square-wave IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal waveform tp = 10 ms; Tj(init) = 25 °C; sinusoidal waveform Tstg storage temperature -55 150 °C Tj junction temperature - 150 °C 003aab477 30 Ptot (W) 003aab478 20 δ= 1 a = 1.57 Ptot (W) 1.9 16 0.5 2.2 2.8 20 12 0.2 4.0 0.1 8 10 4 0 0 6 12 18 IF(AV) (A) 0 24 IF(AV) = IF(RMS) × √δ Fig. 1. Product data sheet 5 10 IF(AV) (A) 15 a = form factor = IF(RMS) / IT(AV) Forward power dissipation as a function of average forward current; square waveform; maximum values BYT79X-600 0 Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; Fig. 3 - - 4.8 K/W without heatsink compound - - 5.9 K/W thermal resistance from junction to ambient free air in free air - 55 - K/W Rth(j-a) 001aaf045 10 Zth(j-h) (K/W) 1 10- 1 P δ= tp T 10- 2 tp 10- 3 10- 6 Fig. 3. 10- 5 10- 4 10- 3 10- 2 t T 10- 1 1 10 tp (s) Transient thermal impedance from junction to heatsink as a function of pulse width 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink - 10 - pF BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 15 A; Tj = 25 °C; Fig. 4 - 1.16 1.38 V IF = 15 A; Tj = 150 °C - 1.01 1.2 V VR = 600 V; Tj = 25 °C - 5 50 µA VR = 600 V; Tj = 100 °C - 0.2 0.8 mA IF = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs; - 40 70 nC - 50 60 ns - 3 5.2 A - 3.2 - V Static characteristics VF forward voltage IR reverse current Dynamic characteristics Qr recovered charge Fig. 5 trr reverse recovery time IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 5 IRM VFR peak reverse recovery current IF = 10 A; VR ≥ 30 V; dIF/dt = 50 A/µs; forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs; Fig. 6 Tj = 100 °C; Fig. 5 003aab479 50 IF (A) IF dlF dt 40 trr 30 time 10 % 20 (1) (2) 100 % Qr (3) 10 IR 0 IRM 001aab911 0 0.6 1.2 VF (V) 1.8 Fig. 5. Forward recovery definitions (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 4. Forward current as a function of forward voltage BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast IF time VF VFRM VF time 001aab912 Fig. 6. Forward recovery definitions BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 11. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 'full pack' SOD113 A A1 E z P q m T D HE L2 j L1(1) k Q L 1 b1 2 b w c M e 0 10 z(2) 20 mm scale 0.8 DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D E e HE max j k L L 1(1) L2 max m P Q q T w mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 0.7 0.4 15.8 15.2 10.3 9.7 5.08 19.0 2.7 1.7 0.6 0.4 14.4 13.5 3.3 2.8 0.5 6.5 6.3 3.2 3.0 2.6 2.3 2.6 2.55 0.4 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. OUTLINE VERSION SOD113 Fig. 7. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 07-06-18 2-lead TO-220F Package outline TO-220F (SOD113) BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Application information .........................................1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................4 9 Isolation characteristics ........................................4 10 Characteristics ....................................................... 5 11 Package outline ..................................................... 7 12 12.1 12.2 12.3 12.4 Legal information ...................................................8 Data sheet status ................................................. 8 Definitions .............................................................8 Disclaimers ...........................................................8 Trademarks .......................................................... 9 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 May 2015 BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 10