Very Low Power/Voltage CMOS SRAM 128K X 16 bit B SI DESCRIPTION FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin PRODUCT FAMILY PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE The BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2013 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2013 is available in DICE form, JEDEC standard 44-pin TSOP Type II package , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. POWER DISSIPATION STANDBY Operating SPEED ( ns ) Vcc=3.0V BS616LV2013DC BS616LV2013EC BS616LV2013TC BS616LV2013AC BS616LV2013DI BS616LV2013EI BS616LV2013TI BS616LV2013AI O O 1 A LB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 OE ( ICC, Max ) Vcc=3.0V Vcc=3.0V 2.4V ~3.6V 70/100 0.7uA 20mA -40 O C to +85 O C 2.4V ~ 3.6V 70/100 1.5uA 25mA 3 A0 4 A1 PKG TYPE DICE TSOP2-44 TSOP1-48 BGA-48-0608 DICE TSOP2-44 TSOP1-48 BGA-48-0608 BLOCK DIAGRAM 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 BS616LV2013EC BS616LV2013EI 2 ( ICCSB1, Max ) +0 C to +70 C PIN CONFIGURATIONS A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A16 A15 A14 A13 A12 BS616LV2013 5 A2 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC A8 A13 A15 Address A16 A14 Input A12 Buffer A7 16 DQ0 . . . . . . . . D8 UB A3 A4 CE D0 C D9 D10 A5 A6 D1 D2 WE D VSS D11 N.C. A7 D3 VCC OE UB E VCC D12 N.C. A16 D4 VSS LB A15 D5 D6 G D15 N.C. A12 A13 WE D7 H N.C. A8 A9 A10 A11 N.C. Data Input Buffer Data Output Buffer 16 Column I/O Write Driver 16 128 Column Decoder 14 CE A14 1024 x 2048 Sense Amp 16 DQ15 B D13 Memory Array Decoder 2048 N.C. D14 1024 Row A6 A5 A4 6 F 20 Control Address Input Buffer A11 A9 A3 A2 A1 A0 A10 Vcc Gnd 48-ball BGA top view Brilliance Semiconductor Inc. reserves the right to modify document contents without notice. R0201-BS616LV2013 1 Revision 2.5 April 2002 BSI BS616LV2013 PIN DESCRIPTIONS Name Function A0-A16 Address Input These 17 address inputs select one of the 131,072 x 16-bit words in the RAM. CE Chip Enable Input CE is active LOW. Chip enables must be active when data read from or write to the device. if chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins. DQ0 - DQ15 Data Input/Output Ports These 16 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Gnd Ground TRUTH TABLE MODE CE WE OE LB UB DQ0~DQ7 DQ8~DQ15 Not selected (Power Down) H X X X X High Z High Z Output Disabled L H H X X High Z High Z ICC L L Dout Dout ICC H L High Z Dout ICC L H Dout High Z ICC L L Din Din ICC Read Write R0201-BS616LV2013 L L H L L X Vcc CURRENT ICCSB, ICCSB1 H L X Din ICC L H Din X ICC 2 Revision 2.5 April 2002 BSI BS616LV2013 ABSOLUTE MAXIMUM RATINGS(1) SYMBOL V TERM PARAMETER Terminal Voltage with Respect to GND RATING -0.5 to Vcc+0.5 OPERATING RANGE UNITS V T BIAS Temperature Under Bias -40 to +125 O T STG Storage Temperature -60 to +150 O PT Power Dissipation 1.0 W I OUT DC Output Current 20 mA C C RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70 O C 2.4V ~ 3.6V O Industrial O -40 C to +85 C 2.4V ~ 3.6V CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) SYMBOL 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CIN CDQ PARAMETER Input Capacitance Input/Output Capacitance CONDITIONS MAX. UNIT VIN=0V 6 pF VI/O=0V 8 pF 1. This parameter is guaranteed and not tested. DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC ) PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS IIL Guaranteed Input Low Voltage(2) Guaranteed Input High Voltage(2) Input Leakage Current IOL Output Leakage Current Vcc = Max, CE = VIH, or OE = VIH, VI/O = 0V to Vcc VOL Output Low Voltage Vcc = Max, IOL = 2mA Vcc=3.0V -- -- 0.4 V VOH Output High Voltage Vcc = Min, IOH = -1mA Vcc=3.0V 2.4 -- -- V ICC Operating Power Supply Current CE = VIL, IDQ = 0mA, F = Fmax(3) Vcc=3.0V -- -- 20 mA ICCSB Standby Current-TTL CE = VIH, IDQ = 0mA Vcc=3.0V -- -- 1 mA ICCSB1 Standby Current-CMOS CE Њ Vcc-0.2V, VIN Њ Vcc - 0.2V or VIN Љ 0.2V Vcc=3.0V -- 0.1 0.7 uA VIL VIH Vcc=3.0V -0.5 -- 0.8 V Vcc=3.0V 2.0 -- Vcc+0.2 V Vcc = Max, VIN = 0V to Vcc -- -- 1 uA -- -- 1 uA 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC . DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC ) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE Њ Vcc - 0.2V VIN Њ Vcc - 0.2V or VIN Љ 0.2V 1.5 -- -- V ICCDR Data Retention Current CE Њ Vcc - 0.2V VIN Њ Vcc - 0.2V or VIN Љ 0.2V -- 0.05 0.5 uA tCDR Chip Deselect to Data Retention Time -- -- ns -- -- ns tR See Retention Waveform Operation Recovery Time 0 TRC (2) 1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time R0201-BS616LV2013 3 Revision 2.5 April 2002 BSI BS616LV2013 LOW VCC DATA RETENTION WAVEFORM ( CE Controlled ) Data Retention Mode Vcc VDR ≥ 1.5V Vcc Vcc tR t CDR CE ≥ Vcc - 0.2V VIH CE KEY TO SWITCHING WAVEFORMS AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Vcc/0V 5ns WAVEFORM 0.5Vcc AC TEST LOADS AND WAVEFORMS 1269 Ω 3.3V VIH 3.3V OUTPUT 100PF 1404 Ω FIGURE 1A FIGURE 1B THEVENIN EQUIVALENT 667 Ω OUTPUT MUST BE STEADY MUST BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGE FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGE FROM L TO H , 5PF INCLUDING JIG AND SCOPE 1404 Ω OUTPUTS 1269 Ω OUTPUT INCLUDING JIG AND SCOPE INPUTS DON T CARE: ANY CHANGE PERMITTED CHANGE : STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE 1.73V ALL INPUT PULSES Vcc GND 90% 90% 10% → ← → 10% ← 5ns FIGURE 2 AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V ) READ CYCLE JEDEC PARAMETER NAME PARAMETER NAME t AVAX tRC Read Cycle Time t AVQV tAA Address Access Time tELQV tACS Chip Select Access Time tBA tBA (1) Data Byte Control Access Time BS616LV2013-70 MIN. TYP. MAX. DESCRIPTION 70 tGLQV tOE Output Enable to Output Valid t E1LQX tCLZ Chip Select to Output Low Z tBE tBE Data Byte Control to Output Low Z tGLQX tOLZ Output Enable to Output in Low Z tEHQZ tCHZ Chip Deselect to Output in High Z tBDO tBDO Data Byte Control to Output High Z tGHQZ tOHZ t AXOX tOH -- -- BS616LV2013-10 MIN. TYP. MAX. 100 -- -- UNIT ns -- -- 70 -- -- 100 ns (CE) -- -- 70 -- -- 100 ns (LB,UB) -- -- 35 -- -- 50 ns -- -- 35 -- -- 50 ns (CE) 10 -- -- 15 -- -- ns (LB,UB) 10 -- -- 15 -- -- ns 10 -- -- 15 -- -- ns (CE) 0 -- 35 0 -- 40 ns (LB,UB) 0 -- 35 0 -- 40 ns Output Disable to Output in High Z 0 -- 30 0 -- 35 ns Output Disable to Address Change 10 -- -- 15 -- -- ns NOTE : 1. tBA is 35ns/50ns (@speed=70ns/100ns) with address toggle. ; .tBA is 70ns/100ns (@speed=70ns/100ns) without address toggle. R0201-BS616LV2013 4 Revision 2.5 April 2002 BSI BS616LV2013 SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) t RC ADDRESS t t t OH AA OH D OUT READ CYCLE2 (1,3,4) CE t ACS t BA LB,UB t BE D OUT t t BDO (5) t (5) CHZ CLZ READ CYCLE3 (1,4) t RC ADDRESS t AA OE t OH t OE t OLZ CE (5) t CLZ t t OHZ (5) t CHZ(1,5) ACS t BA LB,UB t BE t BDO D OUT NOTES: 1. WE is high for read Cycle. 2. Device is continuously selected when CE = VIL. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL . 5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. R0201-BS616LV2013 5 Revision 2.5 April 2002 B SI BS616LV2013 AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V ) WRITE CYCLE JEDEC PARAMETER NAME PARAMETER NAME tAVAX tE1LWH tAVWL tAVWH tWLWH tWHAX tBW tWLQZ tDVWH tWHDX tGHQZ t WC t CW t AS t AW t WP t WR t BW (1) t WHZ t DW t DH t OHZ tWHOX t OW BS616LV2013-70 MIN. TYP. MAX. DESCRIPTION Write Cycle Time 70 -- Chip Select to End of Write 70 0 Address Valid to End of Write Write Pulse Width -- 100 -- -- 100 -- -- 0 70 -- -- 100 35 -- -- 50 (CE,WE) 0 -- -- (LB,UB) 30 -- -- Address Setup Time Write recovery Time Date Byte Control to End of Write BS616LV2013-10 MIN. TYP. MAX. -- UNIT -- ns -- -- ns -- -- ns -- -- ns -- -- ns 0 -- -- ns 40 -- -- ns 0 -- 30 0 -- 40 ns Data to Write Time Overlap 30 -- -- 40 -- -- ns Data Hold from Write Time 0 -- -- 0 -- -- ns Output Disable to Output in High Z 0 -- 30 0 -- 40 ns End of Write to Output Active 5 -- -- 10 -- -- ns Write to Output in High Z NOTE : 1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle. SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE1 (1) t WC ADDRESS (3) t WR OE (11) t CW (5) CE t BW LB,UB t AW WE (3) t WP t AS (2) (4,10) t OHZ D OUT t DH t DW D IN R0201-BS616LV2013 6 Revision 2.5 April 2002 BSI BS616LV2013 WRITE CYCLE2 (1,6) t WC ADDRESS (11) t CW (5) CE t BW LB,UB t AW WE t WR t WP (3) (2) t t AS DH (4,10) t WHZ D OUT (7) (8) t DW t DH (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE going low to the end of write. R0201-BS616LV2013 7 Revision 2.5 April 2002 BSI BS616LV2013 ORDERING INFORMATION BS616LV2013 X X -- Y Y SPEED 70: 70ns 10: 100ns GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE T: TSOP 1 - 48 PIN E: TSOP 2 - 44 PIN A: BGA - 48 PIN(6x8mm) D: DICE PACKAGE DIMENSIONS TSOP2-44 R0201-BS616LV2013 8 Revision 2.5 April 2002 BSI BS616LV2013 PACKAGE DIMENSIONS 48 24 25 b E 1 UNIT SYMBOL 12̓(2X) CL e 12̓(2X) HD Seating Plane 12̓(2x) y "A" INCH 0.0433̈́0.004 0.004̈́0.002 0.039̈́0.002 0.009̈́0.002 0.008̈́0.001 0.004 ~ 0.008 0.004 ~ 0.006 0.645̈́0.004 0.472̈́0.004 0.020̈́0.004 0.708̈́0.008 0.0236̈́0.006 0.0315̈́0.004 0.004 Max. 0̓~ 8̓ MM 1.10̈́0.10 0.10̈́0.05 1.00̈́0.05 0.22̈́0.05 0.20̈́0.03 0.10 ~ 0.21 0.10 ~ 0.16 16.40̈́0.10 12.00̈́0.10 0.50̈́0.10 18.00̈́0.20 0.60̈́0.15 0.80̈́0.10 0.1 Max. 0̓~ 8̓ A2 A D A A1 A2 b b1 c c1 D E e HD L L1 y Ӱ GAUGE PLANE 24 25 0 SEATING PLANE A 12̓(2x) b WITH PLATING "A" DETAIL VIEW 0.254 A1 A L L1 c c1 b1 BASE METAL SECTION A-A 48 1 TSOP1-48PIN A15 A14 A13 A12 A11 A10 A9 A8 NC NC /WE CE2 NC /UB /LB NC NC A7 A6 A5 A4 A3 A2 A1 1 9 10 13 48 47 46 Pkg Type : 48TSOP(I)-12x18mm 37 16 17 27 24 R0201-BS616LV2013 25 9 A16 NC VSS IO15 IO7 IO14 IO6 IO13 IO5 IO12 IO4 VCC IO11 IO3 IO10 IO2 IO9 IO1 IO8 IO0 /OE VSS /CE A0 Revision 2.5 April 2002 BSI BS616LV2013 PACKAGE DIMENSIONS (continued) NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 1.4 Max. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. BALL PITCH e = 0.75 D E N D1 E1 8.0 6.0 48 5.25 3.75 E1 e D1 VIEW A 48 mini-BGA (6 x 8) R0201-BS616LV2013 10 Revision 2.5 April 2002 BSI BS616LV2013 REVISION HISTORY Revision Description Date 2.2 2001 Data Sheet release Apr. 15, 2001 2.3 Modify Standby Current (Typ. and Max.) Jun. 29, 2001 2.4 Modify CSP Pin Configuration Sep.12, 2001 Pin number : E3 “ VSS ” rename to “ N.C. “ Modify some AC parameters April,12,2002 2.5 R0201-BS616LV2013 11 Note Revision 2.5 April 2002