TGS BU406 Npn epitaxial silicon transistor Datasheet

TIGER ELECTRONIC CO.,LTD
Product specification
BU406
NPN Epitaxial Silicon Transistor
High Voltage Switching
* Use In Horizontal Deflection Output Stage
Absolute Maximum Ratings ( Ta = 25
Parameter
)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
200
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
7.0
A
Base Current
IB
4.0
A
Ptot
60
W
Tj
150
o
Tstg
-55~150
o
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
Electrical Characteristics ( Ta = 25
Parameter
Collector Cut-off Current
C
C
TO-220
)
Symbol
ICES
Test Conditions
Min.
Typ.
Max.
VCE=400V, IE=0
5.0
VCE=250V, IE=0
0.1
1.0
Emitter Cut-off Current
IEBO
VEB=6V, IC=0
Collector-Emitter Sustaining Voltage
VCEO
IC=50mA, IB=0
200
DC Current Gain
hFE(1)
VCE=4V, IC=1.0A
10
Unit
mA
mA
V
Collector-Emitter Saturation Voltage
VCE(sat) IC=5.0A,IB=0.5A
1.0
V
Base-Emitter Saturation Voltage
VBE(sat) IC=5.0A,IB=0.5A
1.2
V
Current Gain Bandwidth Product
Turn Off Time
fT
tOFF
VCE=10V, IC=0.5A
IC=5A, IB=0.5A
10
MHz
0.75
us
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