TIGER ELECTRONIC CO.,LTD Product specification BU406 NPN Epitaxial Silicon Transistor High Voltage Switching * Use In Horizontal Deflection Output Stage Absolute Maximum Ratings ( Ta = 25 Parameter ) Symbol Value Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7.0 A Base Current IB 4.0 A Ptot 60 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature Electrical Characteristics ( Ta = 25 Parameter Collector Cut-off Current C C TO-220 ) Symbol ICES Test Conditions Min. Typ. Max. VCE=400V, IE=0 5.0 VCE=250V, IE=0 0.1 1.0 Emitter Cut-off Current IEBO VEB=6V, IC=0 Collector-Emitter Sustaining Voltage VCEO IC=50mA, IB=0 200 DC Current Gain hFE(1) VCE=4V, IC=1.0A 10 Unit mA mA V Collector-Emitter Saturation Voltage VCE(sat) IC=5.0A,IB=0.5A 1.0 V Base-Emitter Saturation Voltage VBE(sat) IC=5.0A,IB=0.5A 1.2 V Current Gain Bandwidth Product Turn Off Time fT tOFF VCE=10V, IC=0.5A IC=5A, IB=0.5A 10 MHz 0.75 us