JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02L Plastic-Encapsulate Diodes DS161-40THD02 SCHOTTKY BARRIER DIODE WBFBP-02L FEATURES Low forward voltage drop z z Small power mold type Low IR z Small current rectification z APPLICATIONS Low voltage rectification z High efficiency DC-to-DC conversion z z Switch mode power supply LED backlight for mobile application z z Low power consumption applications z Reverse polarity protection MARKING: BD MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit 40 V RMS Reverse Voltage 28 V Average Rectified Output Current 1.5 A 8 A VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR(RMS) IO IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms PD Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 667 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage V(BR) Reverse current IR Forward voltage Diode capacitance www.cj-elec.com Test conditions Symbol VF Cd IR=250μA Min Typ Max Unit V 40 VR=20V 40 μA VR=40V 50 μA IF=0.5A 0.40 V IF=1.0A 0.45 V IF=1.5A 0.58 V VR=0V; f=1MHz; 1 180 pF A-1,Mar,2016 Typical Characteristics Forward Characteristics Reverse 10000 3000 Pulsed Characteristics Pulsed 1000 Ta=100℃ (uA) T= a 2 5℃ 100 REVERSE CURRENT IR T= a 1 00 ℃ FORWARD CURRENT IF (mA) 1000 10 1 0.1 0.0 100 10 Ta=25℃ 1 0.1 0.1 0.2 0.3 FORWARD VOLTAGE 0.4 VF 0.5 0.6 0 20 30 REVERSE VOLTAGE Capacitance Characteristics 350 10 (V) VR 40 (V) Power Derating Curve 200 Ta=25℃ f=1MHz (mW) 150 PD 250 200 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 300 150 100 100 50 50 0 0 0 5 10 15 REVERSE VOLTAGE www.cj-elec.com 20 VR 25 30 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 ( ℃) A-1,Mar,2016 WBFBP-02L(1.6X0.8X0.5)3DFNDJH2XWOLQH'LPHQVLRQV WBFBP-02L(1.6X0.8X0.5) 6XJJHVWHG3DG/D\RXW www.cj-elec.com 3 A-1,Mar,2016 WBFB-02L(1.6X0.8X0.5) Tape and Reel www.cj-elec.com 4 A-1,Mar,2016