Transistors SMD Type NPN Transistors FZT851 (KZT851) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 ■ Features 4 7.0±0.3 ● Collector Emitter Voltage VCEO=60V ● Complementary to FZT951 3.50±0.2 ● Collector Current Capability IC=6A 1 2 3 0.250 2.30 (typ) 1.80 (max) Gauge Plane 0.02 ~ 0.1 1.Base 2.Collector 0.70±0.1 4.60 (typ) 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 6 Collector Current - Pulse ICP 20 Collector Power Dissipation PC 3 Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 Unit V A W ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors FZT851 (KZT851) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 150 Collector-emitter breakdown voltage VCER IC=1mA, RB ≤1kΩ 150 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO Collector- emitter cut-off current RB ≤1kΩ ICER Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Typ Max 0.1 1 VCB= 120 V , IE= 0 , Ta = 100℃ VCB= 120 V , IE= 0 0.1 VEB= 6V , IC=0 0.1 IC=0.1 A, IB=5mA (Note.1) 50 IC=1 A, IB=50mA (Note.1) 100 IC=2 (Note.1) 170 A, (Note.1) VBE(sat) IC=6 A, IB=300mA Base-Emitter Turn On Voltage VBE(on) VCE= 6V, IC= 1A hFE(1) VCE= 1V, IC= 10mA 100 300 hFE(2) VCE= 1V, IC= 2A 100 300 hFE(3) VCE= 1V, IC= 5A 75 hFE(4) VCE= 1V, IC= 10A 25 (Note.1) Switching Times Collector output capacitance Transition frequency Note.1: Pulse width=300us. Duty cycle ≤ 2% www.kexin.com.cn ton mV 375 Base - emitter saturation voltage DC current gain uA 1 VCB= 120 V , IE= 0 , Ta = 100℃ IB=50mA Unit V VCB= 120 V , IE= 0 IC=6 A, IB=300mA 2 Min Collector- base breakdown voltage (Note.1) 1.2 (Note.1) 1.15 45 V toff IC=1A, IB1=100mA IB2=100mA, VCC=10V Cob VCB= 10V, f=1MHz 45 pF VCE= 10V, IC= 100mA,f=50MHz 130 MHz fT 1100 ns Transistors SMD Type NPN Transistors FZT851 (KZT851) ■ Typical Characterisitics 1.6 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 0.01 0.1 1 1.2 1.0 200 0.8 VCE=5V VCE=1V 0.6 0.2 0.01 IC - Collector Current (Amps) 0.1 100 10 h FE v I C VCE=1V 2.0 1.5 VBE - (Volts) 2.0 IC/IB=10 IC/IB=50 1.0 1.5 1.0 0.5 0.5 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v I C VBE(on) v I C 10 100 Single Pulse Test Tamb=25 °C 100 IC - Collector Current (A) 1 IC - Collector Current (Amps) VCE(sat) v I C VBE(sat) - (Volts) 100 0.4 0 100 10 300 1.4 hFE - Typical Gain hFE - Normalised Gain VCE(sat) - (Volts) 0.8 10 DC 1 1s 100ms 10ms 1ms 100 µs 0.1 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area www.kexin.com.cn 3