ON MC74HCT32ADTR2G Quad 2-input or gate with lsttl compatible input Datasheet

MC74HCT32A
Quad 2-Input OR Gate with
LSTTL Compatible Inputs
High−Performance Silicon−Gate CMOS
The MC74HCT32A is identical in pinout to the LS32. The device
inputs are compatible with Standard CMOS or LSTTL outputs.
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MARKING
DIAGRAMS
Features
•
•
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 V to 6.0 V
Low Input Current: 1 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 48 FETs or 12 Equivalent Gates
These are Pb−Free Devices
14
1
B4
A4
Y4
B3
A3
Y3
14
13
12
11
10
9
8
MC74HCT32AN
AWLYYWWG
1
14
SOIC−14
D SUFFIX
CASE 751A
14
1
Pinout: 14−Lead Packages (Top View)
VCC
14
PDIP−14
N SUFFIX
CASE 646
HCT32AG
AWLYWW
1
14
14
1
TSSOP−14
DT SUFFIX
CASE 948G
1
HCT
32A
ALYWG
G
14
1
2
A1
B1
3
Y1
4
A2
5
B2
6
Y2
7
GND
1
Figure 1. Pinout
A1
B1
A2
B2
A3
B3
A4
B4
SOEIAJ−14
F SUFFIX
CASE 965
14
1
A
= Assembly Location
L, WL = Wafer Lot
Y, YY
= Year
W, WW = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
1
3
2
Y1
4
6
5
Y2
Y = A+B
9
8
10
FUNCTION TABLE
Y3
Inputs
12
11
13
74HCT32A
ALYWG
Y4
PIN 14 = VCC
PIN 7 = GND
Output
A
B
Y
L
L
H
H
L
H
L
H
L
H
H
H
Figure 2. Logic Diagram
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 8
1
Publication Order Number:
MC74HCT32A/D
MC74HCT32A
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
–0.5 to +7.0
V
DC Input Voltage (Referenced to GND)
–0.5 to VCC +0.5
V
DC Output Voltage (Referenced to GND)
–0.5 to VCC +0.5
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
Vout
Iin
DC Input Current, per Pin
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
PD
Power Dissipation in Still Air,
Tstg
Storage Temperature
TL
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
Plastic DIP†
SOIC Package†
TSSOP Package†
±50
mA
750
500
450
mW
–65 to +150
°C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
°C
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
†Derating − Plastic DIP: – 10 mW/°C from 65° to 125°C
SOIC Package: – 7 mW/°C from 65° to 125°C
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
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2
Min
Max
Unit
2.0
6.0
V
0
VCC
V
–55
+125
°C
0
0
0
1000
500
400
ns
MC74HCT32A
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
V
Condition
Guaranteed Limit
−55 to 25°C
≤85°C
≤125°C
Unit
Symbol
Parameter
VIH
Minimum High−Level Input Voltage
Vout = 0.1V or VCC −0.1V
|Iout| ≤ 20mA
4.5 to
5.5
2.0
2.0
2.0
V
VIL
Maximum Low−Level Input Voltage
Vout = 0.1V or VCC − 0.1V
|Iout| ≤ 20mA
4.5 to
5.5
0.8
0.8
0.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
4.5
3.98
3.84
3.70
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
4.5
0.26
0.33
0.40
Vin = VIH or VIL
VOL
Maximum Low−Level Output
Voltage
|Iout| ≤ 4.0mA
Vin = VIH or VIL
|Iout| ≤ 20mA
Vin = VIH or VIL
|Iout| ≤ 4.0mA
V
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0mA
5.5
1.0
10
40
mA
AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns, VCC = 5.0 V ± 10%)
VCC
V
Guaranteed Limit
−55 to 25°C
≤85°C
≤125°C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
5.0
15
19
22
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
5.0
15
19
22
ns
10
10
10
pF
Parameter
Symbol
Cin
Maximum Input Capacitance
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
CPD
20
Power Dissipation Capacitance (Per Buffer)*
*Used to determine the no−load dynamic power consumption: PD = CPD VCC
2f
pF
+ ICC VCC .
ORDERING INFORMATION
Package
Shipping†
MC74HCT32ANG
PDIP−14
(Pb−Free)
25 Units / Rail
MC74HCT32ADG
SOIC−14
(Pb−Free)
55 Units / Rail
MC74HCT32ADR2G
SOIC−14
(Pb−Free)
Device
MC74HCT32ADTR2G
TSSOP−14*
MC74HCT32AFELG
SOEIAJ−14
(Pb−Free)
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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3
MC74HCT32A
tr
VCC
90%
INPUT
A OR B
(VI)
VI = GND to 3.0 V
Vm = 1.3 V
tf
Vm
10%
GND
tPHL
tPLH
90%
OUTPUT Y
Vm
10%
tTHL
tTLH
Figure 3. Switching Waveforms
TEST
POIN
T
OUTPUT
DEVICE
UNDER
TEST
CL *
*Includes all probe and jig capacitance
Figure 4. Test Circuit
A
Y
B
Figure 5. Expanded Logic Diagram
(1/4 of the Device)
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4
MC74HCT32A
PACKAGE DIMENSIONS
PDIP−14
CASE 646−06
ISSUE P
14
8
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
A
F
L
N
C
−T−
SEATING
PLANE
H
G
D 14 PL
J
K
0.13 (0.005)
M
M
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5
DIM
A
B
C
D
F
G
H
J
K
L
M
N
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.290
0.310
−−−
10 _
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.37
7.87
−−−
10 _
0.38
1.01
MC74HCT32A
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
−A−
14
8
−B−
P 7 PL
0.25 (0.010)
M
7
1
G
−T−
D 14 PL
0.25 (0.010)
T B
S
A
DIM
A
B
C
D
F
G
J
K
M
P
R
J
M
K
M
F
R X 45 _
C
SEATING
PLANE
B
M
S
SOLDERING FOOTPRINT*
7X
7.04
14X
1.52
1
14X
0.58
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0_
7_
0.228 0.244
0.010 0.019
MC74HCT32A
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G−01
ISSUE B
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
N
2X
14
L/2
M
B
−U−
L
PIN 1
IDENT.
N
F
7
1
0.15 (0.006) T U
0.25 (0.010)
8
S
DETAIL E
K
A
−V−
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
J J1
SECTION N−N
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
MILLIMETERS
INCHES
DIM MIN
MAX
MIN MAX
A
4.90
5.10 0.193 0.200
B
4.30
4.50 0.169 0.177
C
−−−
1.20
−−− 0.047
D
0.05
0.15 0.002 0.006
F
0.50
0.75 0.020 0.030
G
0.65 BSC
0.026 BSC
H
0.50
0.60 0.020 0.024
J
0.09
0.20 0.004 0.008
J1
0.09
0.16 0.004 0.006
−W−
K
0.19
0.30 0.007 0.012
K1 0.19
0.25 0.007 0.010
L
6.40 BSC
0.252 BSC
M
0_
8_
0_
8_
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MC74HCT32A
PACKAGE DIMENSIONS
SOEIAJ−14
CASE 965−01
ISSUE B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
LE
8
Q1
E HE
L
7
1
M_
DETAIL P
Z
D
VIEW P
A
e
A1
b
0.13 (0.005)
c
M
0.10 (0.004)
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
--2.05
0.05
0.20
0.35
0.50
0.10
0.20
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
--1.42
INCHES
MIN
MAX
--0.081
0.002
0.008
0.014
0.020
0.004
0.008
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
--0.056
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MC74HCT32A/D
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