PD - 97704A
AUTOMOTIVE GRADE
AUIRFS3004-7P
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
0.90m
1.25m
400A
ID (Package Limited)
240A
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications such as
Electric Power Steering, Battery Switch, SMPS and other
heavy loads.
c
D
S
S
G
S
S
S
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
d
f
e
d
2.0
-55 to + 175
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
dv/dt
TJ
TSTG
Units
c
c
400
280
240
1610
380
2.5
± 20
290
See Fig. 14, 15, 22a, 22b
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Symbol
RJC
RJA
Parameter
kl
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/29/11
AUIRFS3004-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40
––– –––
––– 0.038 –––
––– 0.90 1.25
2.0
–––
4.0
1300 ––– –––
–––
2.0
–––
––– –––
20
––– ––– 250
––– ––– 100
––– ––– -100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 195A
V VDS = VGS, ID = 250μA
S VDS = 10V, ID = 195A
μA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
d
g
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Min. Typ. Max. Units
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
h
i
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
42
65
95
23
240
91
160
9130
2020
990
2590
2650
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
ID = 180A
VDS =20V
VGS = 10V
ID = 180A, VDS =0V, VGS = 10V
VDD = 26V
ID = 240A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.01mH
RG = 25, IAS = 240A, VGS =10V. Part not recommended for use
above this value .
2
Min. Typ. Max. Units
–––
–––
–––
Conditions
c
A
MOSFET symbol
1610
A
showing the
integral reverse
––– 400
D
G
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
VR = 34V,
TJ = 125°C
IF = 240A
di/dt = 100A/μs
TJ = 25°C
g
S
––– –––
1.3
V
–––
49
–––
ns
–––
51
–––
–––
37
–––
nC
TJ = 125°C
–––
41
–––
–––
3.2
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
ISD 240A, di/dt 740A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
RJC value shown is at time zero.
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AUIRFS3004-7P
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D2 PAK - 7 Pin
Machine Model
††
MSL1
Class M4 (+/- 800V)†††
AEC-Q101-002
ESD
Human Body Model
Class H3A (+/- 6000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFS3004-7P
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
100
10
1
4.5V
60μs PULSE WIDTH
0.1
1
10
100
0.1
1000
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
Tj = 175°C
10
V DS, Drain-to-Source Voltage (V)
100
T J = 175°C
T J = 25°C
10
1
VDS = 25V
60μs PULSE WIDTH
0.1
ID = 195A
VGS = 10V
1.5
1.0
0.5
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 180A
C oss = C ds + C gd
C, Capacitance (pF)
60μs PULSE WIDTH
4.5V
Tj = 25°C
0.1
Ciss
10000
Coss
Crss
1000
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
0
50
100
150
200
250
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS3004-7P
10000
T J = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1
0.0
0.5
1.0
1.5
2.0
0
VSD, Source-to-Drain Voltage (V)
300
240
180
120
60
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
ID, Drain Current (A)
Limited By Package
25
10
100
Fig 8. Maximum Safe Operating Area
420
360
1
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
50
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.5
Fig 10. Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
1200
3.0
ID
44A
80A
BOTTOM 240A
TOP
1000
2.5
Energy (μJ)
DC
2.0
1.5
1.0
0.5
0.0
800
600
400
200
0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFS3004-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
J
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
4
4
Ci= iRi
Ci iRi
1E-005
0.00757
0.000006
0.06508
0.000064
0.18313
0.001511
0.14378
0.009800
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W) i (sec)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
320
280
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 240A
240
200
160
120
80
40
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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4.5
10
4.0
9
8
3.5
3.0
2.5
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
7
IRRM (A)
VGS(th), Gate threshold Voltage (V)
AUIRFS3004-7P
IF = 96A
V R = 34V
TJ = 25°C
TJ = 125°C
6
5
4
1.5
3
2
1.0
-75 -50 -25 0
100
25 50 75 100 125 150 175 200
200
T J , Temperature ( °C )
400
500
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
140
12
IF = 144A
V R = 34V
11
10
TJ = 25°C
TJ = 125°C
9
8
120
IF = 96A
V R = 34V
100
TJ = 25°C
TJ = 125°C
QRR (nC)
IRRM (A)
300
diF /dt (A/μs)
7
6
80
60
5
4
40
3
20
2
100
200
300
400
100
500
200
300
400
500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
180
160
QRR (nC)
140
120
IF = 144A
V R = 34V
TJ = 25°C
TJ = 125°C
100
80
60
40
20
100
200
300
400
500
diF /dt (A/μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS3004-7P
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width µs
Duty Factor
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
12V
tf
.2F
.3F
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS3004-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFS3004-7P
D2Pak - 7 Pin Part Marking Information
Part Number
AUS3004-7P
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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AUIRFS3004-7P
Ordering Information
Base part number
AUIRFS3004-7P
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Package Type
D2Pak 7 Pin
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
800
800
AUIRFS3004-7P
AUIRFS3004-7TRL
AUIRFS3004-7TRR
11
AUIRFS3004-7P
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corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
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12
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