NTE NTE5408 Silicon controlled rectifier (scr) 3 amp sensitive gate Datasheet

NTE5408 thru NTE5410
Silicon Controlled Rectifier (SCR)
3 Amp Sensitive Gate
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
a gate current of 200µA.
These NTE SCRs are reverse–blocking triode thyristors and may be switched from off–state to conduction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +100°C), VDRXM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 40A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
IRRM
Peak Off–State Current
IDRXM
Maximum On–State Voltage
VTM
DC Holding Current
IHOLD
Test Conditions
Min
Typ
Max
Unit
VRRM = Max, VDRXM = Max,
TC = +100°C,
° RGK = 1kΩ
Ω
–
–
0.75
mA
–
–
0.75
mA
IT = 10A (Peak)
–
–
2.2
V
RGK = 1000Ω
–
–
5
mA
DC Gate–Trigger Current
IGT
VD = 6VDC, RL = 100Ω
–
–
200
µA
DC Gate–Trigger Voltage
VGT
VD = 6VDC, RL = 100Ω
–
–
0.8
V
Gate Controlled Turn–On Time
tgt
IG x 3GT
–
1.2
–
µs
I2t for Fusing Reference
I2t
For SCR Protection
–
–
2.6
A2sec
–
5
–
V/µs
Critical Rate of Applied
Forward Voltage
dv/dt RGK = 1kΩ, TC = +100°C
(critical)
.352 (8.95) Dia Max
.325 (8.13) Dia Max
.250
(6.35)
Max
.500
(12.7)
Min
.019 (0.5)
Gate
Cathode
Anode
45°
.031 (.793)