BC857...-BC860... PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) 1BC857BL3 is not qualified according AEC Q101 Type Marking Pin Configuration Package BC857A 3Es 1=B 2=E 3=C - - - SOT23 BC857B 3Fs 1=B 2=E 3=C - - - SOT23 BC857BL3* 3F 1=B 2=E 3=C - - - TSLP-3-1 BC857BW 3Fs 1=B 2=E 3=C - - - SOT323 BC857C 3Gs 1=B 2=E 3=C - - - SOT23 BC857CW 3Gs 1=B 2=E 3=C - - - SOT323 BC858A 3Js 1=B 2=E 3=C - - - SOT23 BC858B 3Ks 1=B 2=E 3=C - - - SOT23 BC858BW 3Ks 1=B 2=E 3=C - - - SOT323 BC858C 3Ls 1=B 2=E 3=C - - - SOT23 BC858CW 3Ls 1=B 2=E 3=C - - - SOT323 BC859C 4Cs 1=B 2=E 3=C - - - SOT23 BC860B 4Fs 1=B 2=E 3=C - - - SOT23 BC860BW 4Fs 1=B 2=E 3=C - - - SOT323 BC860CW 4Gs 1=B 2=E 3=C - - - SOT323 * Not qualified according AEC Q101 1 2011-09-19 BC857...-BC860... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC857..., BC860... 45 BC858..., BC859... 30 Collector-base voltage Unit VCBO BC857..., BC860... 50 BC858..., BC859... 30 5 Emitter-base voltage VEBO Collector current IC 100 Peak collector current, tp ≤ 10 ms ICM 200 Total power dissipation Ptot mW TS ≤ 71 °C, BC857-BC860 330 TS ≤ 135 °C, BC857BL3 250 TS ≤ 124 °C, BC857W-BC860W 250 Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS mA 150 °C -65 ... 150 Value BC857-BC860 ≤ 240 BC857BL3 ≤ 60 BC857W-BC860W ≤ 105 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-09-19 BC857...-BC860... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC857..., BC860... 45 - - IC = 10 mA, IB = 0 , BC858..., BC859... 30 - - IC = 10 µA, IE = 0 , BC857..., BC860... 50 - - IC = 10 µA, IE = 0 , BC858..., BC859... 30 - - 5 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 1 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 45 V, IE = 0 - - 0.015 VCB = 30 V, IE = 0 , TA = 150 °C - - 5 DC current gain1) - hFE IC = 10 µA, VCE = 5 V, hFE-grp.A - 140 - IC = 10 µA, VCE = 5 V, hFE-grp.B - 250 - IC = 10 µA, VCE = 5 V, hFE-grp.C - 480 - IC = 2 mA, VCE = 5 V, hFE-grp.A 125 180 250 IC = 2 mA, VCE = 5 V, hFE-grp.B 220 290 475 IC = 2 mA, VCE = 5 V, hFE-grp.C 420 520 800 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base emitter saturation voltage1) VBEsat Base-emitter voltage1) 1Pulse VBE(ON) test: t < 300µs; D < 2% 3 2011-09-19 BC857...-BC860... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 250 - MHz Ccb - 1.5 - pF Ceb - 8 - AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance kΩ h11e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 2.7 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 4.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 8.7 - Open-circuit reverse voltage transf. ratio 10 -4 h12e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 1.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 2 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 3 - Short-circuit forward current transf. ratio - h21e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 200 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 330 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 600 - Open-circuit output admittance µS h22e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 18 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 30 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 60 - F - 1 4 dB Vn - - 0.11 µV Noise figure IC = 0.2 mA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ, BC859, BC850 Equivalent noise voltage IC = 200 mA, VCE = 5 V, RS = 2 kΩ, f = 10...50 Hz, BC860 4 2011-09-19 BC857...-BC860... DC current gain hFE = ƒ(IC) VCE = 1 V Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 20 EHP00382 10 3 h FE 5 EHP00380 10 2 mA ΙC 100 C 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 10 -1 2 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 20 EHP00379 10 2 0 mA ΙC EHP00381 10 4 nA Ι CB0 10 10 3 100 C 25 C -50C 1 5 max 10 2 5 5 typ 10 1 5 10 0 5 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C 150 TA 5 2011-09-19 BC857...-BC860... Transition frequency fT = ƒ(IC) VCE = 5 V Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00378 10 3 12 pF MHz 5 10 CCB(CEB ) fT 10 9 8 7 2 6 5 5 4 CEB 3 2 CCB 1 10 1 10 -1 5 10 0 5 10 1 mA ΙC 0 0 10 2 4 8 12 16 V Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS) BC856-BC860 BC857BL3 360 300 mW 300 250 270 225 240 200 Ptot Ptot mW 210 175 180 150 150 125 120 100 90 75 60 50 30 25 0 0 22 VCB(VEB 15 30 45 60 75 90 105 120 0 0 °C 150 TS 15 30 45 60 75 90 105 120 °C 150 TS 6 2011-09-19 BC857...-BC860... Total power dissipation P tot = ƒ(TS) Permissible Pulse Load BC857W-BC860W Ptotmax/PtotDC = ƒ(tp ) BC857/W-BC860/W 300 EHP00377 10 3 mW Ptot max 5 Ptot DC 250 D= tp tp T T Ptot 225 10 2 200 175 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 150 125 100 10 1 75 5 50 25 0 0 15 30 45 60 75 90 105 120 °C 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 TS tp Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BC857BL3 Ptotmax/PtotDC = ƒ(tp ) BC857BL3 10 3 Ptotmax/ PtotDC R thJS 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 0 s 10 -6 10 -5 10 -4 10 -3 10 -2 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 1 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 2011-09-19 Package SOT23 BC857...-BC860... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 8 2011-09-19 Package SOT323 BC857...-BC860... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 9 2011-09-19 Package TSLP-3-1 BC857...-BC860... Package Outline Bottom view 0.4 +0.1 0.6 ±0.05 0.5 ±0.035 2 1 ±0.05 3 0.65 ±0.05 3 1) 2 1 1) 0.05 MAX. 0.35 ±0.05 Pin 1 marking 2 x 0.15 ±0.035 2 x 0.25 ±0.035 1 0.25 ±0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 10 2011-09-19 BC857...-BC860... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2011-09-19