@vic MMBTA44 SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR 1.02 FEATURES Parameter Symbol 2.80±0.05 0.35 unless Test otherwise 2.92±0.05 1.60±0.05 1.9 0.95±0.025 Power dissipation PCM : 0.35 W （Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 400 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ specified） conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100μA， IC=0 5 V Collector cut-off current ICBO VCB=400 V , IE=0 Collector cut-off current ICEO VCE=400 V , Emitter cut-off current IEBO VEB= 4 V , HFE（1） VCE=10V , IC=10 mA 80 HFE（2） VCE=10V, IC=1mA 70 HFE（3） VCE=10V ,IC=100 mA 60 VCE(sat) IC=10 mA, IB=1mA 0.2 V VCE(sat) IC=50 mA, IB=5mA 0.3 V VBE(sat) IC=10 mA, IB= 1 mA 0.75 V DC current gain mA , IC=0 0.1 μA 5 μA 0.1 μA 300 Collector-emitter saturation voltage Base-emitter sataration voltage VCE=20V, IC=10mA Transition frequency 50 fT MHz f =30MHz MARKING:3D Copyright @vic Electronics Corp. 1 Website http://www.avictek.com