TI LP2995MR Lp2995 ddr termination regulator Datasheet

LP2995
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SNVS190M – FEBRUARY 2002 – REVISED MARCH 2013
LP2995 DDR Termination Regulator
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FEATURES
DESCRIPTION
•
•
•
•
•
•
•
The LP2995 linear regulator is designed to meet the
JEDEC SSTL-2 and SSTL-3 specifications for
termination of DDR-SDRAM. The device contains a
high-speed operational amplifier to provide excellent
response to load transients. The output stage
prevents shoot through while delivering 1.5A
continuous current and transient peaks up to 3A in
the application as required for DDR-SDRAM
termination. The LP2995 also incorporates a VSENSE
pin to provide superior load regulation and a VREF
output as a reference for the chipset and DDR
DIMMS.
1
2
•
Low Output Voltage Offset
Works with +5v, +3.3v and 2.5v Rails
Source and Sink Current
Low External Component Count
No External Resistors Required
Linear Topology
Available in SOIC-8, SO PowerPAD-8 or
WQFN-16 Packages
Low Cost and Easy to Use
APPLICATIONS
WHITE SPACE
•
•
•
WHITE SPACE
DDR Termination Voltage
SSTL-2
SSTL-3
WHITE SPACE
WHITE SPACE
Typical Application Circuit
VREF = 1.25V
+
LP2995
0.1PF
VDDQ = 2.5V
VDDQ
VREF
VDD = 2.5V
AVIN
VSENSE
PVIN
VTT
+
50PF
GND
VTT = 1.25V
+
220PF
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2002–2013, Texas Instruments Incorporated
LP2995
SNVS190M – FEBRUARY 2002 – REVISED MARCH 2013
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4
5 VDDQ
N/C
GND
Figure 1. SOIC-8 (D0008A) Package
Top View
16 15 14 13
1
12
PVIN
11
PVIN
2
GND
N/C
3
10
AVIN
N/C
4
9
N/C
5
6
7
8
Figure 2. NHP- 16 Package
Top View
NC 1
GND 2
VSENSE 3
VREF
N/C
VREF
VTT
6 AVIN
VREF
3
VDDQ
7 PVIN
VSENSE
VTT
8 VTT
N/C
1
2
VSENSE
NC
GND
N/C
Connection Diagram
8 VTT
GND
4
7 PVIN
6 AVIN
5 VDDQ
Figure 3. SO PowerPAD-8 (DDA0008A) Package
Top View
PIN DESCRIPTIONS
2
SOIC-8 Pin or SO
PowerPAD-8 Pin
WQFN Pin
Name
1
1,3,4,6,9, 13,16
NC
2
2
GND
3
5
VSENSE
4
7
VREF
Buffered internal reference voltage of VDDQ/2.
5
8
VDDQ
Input for internal reference equal to VDDQ/2.
6
10
AVIN
Analog input pin.
7
11, 12
PVIN
Power input pin.
8
14, 15
VTT
Output voltage for connection to termination resistors.
EP
EP
Exposed pad thermal connection. Connect to Ground.
Function
No internal connection. Can be used for vias.
Ground.
Feedback pin for regulating VTT.
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
AVIN to GND
−0.3V to +6V
PVIN to GND
-0.3V to AVIN
VDDQ
(3)
−0.3V to +6V
−65°C to +150°C
Storage Temp. Range
Junction Temperature
150°C
SO PowerPAD-8 Thermal Resistance (θJA)
43°C/W
SOIC-8 Thermal Resistance (θJA)
151°C/W
WQFN-16 Thermal Resistance (θJA)
51°C/W
Lead Temperature (Soldering, 10 sec)
ESD Rating
(1)
(2)
(3)
(4)
260°C
(4)
1kV
Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating range indicates conditions for which
the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and test conditions
see Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
VDDQ voltage must be less than 2 x (AVIN - 1) or 6V, whichever is smaller.
The human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin.
Operating Range
Junction Temp. Range
(1)
0°C to +125°C
AVIN to GND
2.2V to 5.5V
PVIN to GND
2.2V to AVIN
(1)
At elevated temperatures, devices must be derated based on thermal resistance. The device in the SOIC-8 package must be derated at
θJA = 151° C/W junction to ambient with no heat sink. The device in the WQFN-16 must be derated at θJA = 51° C/W junction to
ambient.
Electrical Characteristics
Specifications with standard typeface are for TJ = 25°C and limits in boldface type apply over the full Operating
Temperature Range (TJ = 0°C to +125°C). Unless otherwise specified, AVIN = PVIN = 2.5V, VDDQ = 2.5V (1).
Min
Typ
Max
Units
VREF
Symbol
VREF Voltage
IREF_OUT = 0mA
1.21
1.235
1.26
V
VOSVTT
VTT Output Voltage Offset
IOUT = 0A
−15
−20
0
15
20
mV
ΔVTT/VTT
Load Regulation
IOUT = 0 to 1.5A
0.5
IOUT = 0 to −1.5A
−0.5
ZVREF
VREF Output Impedance
ZVDDQ
VDDQ Input Impedance
Iq
Quiescent Current
(1)
(2)
(3)
(4)
Parameter
(3)
Conditions
(2)
IREF = −5µA to +5µA
IOUT = 0A
(4)
%
5
kΩ
100
kΩ
250
400
µA
Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using
Statistical Quality Control (SQC) methods. The limits are used to calculate TI's Average Outgoing Quality Level (AOQL).
VTT offset is the voltage measurement defined as VTT subtracted from VREF.
Load regulation is tested by using a 10ms current pulse and measuring VTT.
Quiescent current defined as the current flow into AVIN.
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Typical Performance Characteristics
VIN
Iq
vs
(25°C)
Iq
vs
Temperature ( VIN = 2.5V)
260
800
700
255
600
250
Iq (PA)
Iq (PA)
500
400
245
300
240
200
235
100
2
2.5
3
VIN
3.5
4
4.5
5
0
5.5
25
50
75
100
VIN (VOLTS)
TEMPERATURE (oC)
Figure 4.
Figure 5.
Iq
vs
(0, 25, 85, and 125°C)
VREF
vs
IREF
1.26
1050
125
1.255
900
125oC
1.25
1.245
VREF (V)
Iq (PA)
750
600
0oC
450
1.24
1.235
1.23
1.225
300
1.22
150
1.215
1.21
-5
0
2
2.5
3
3.5
4
4.5
5
5.5
-4
-3
-2
-1
0
1
2
3
4
5
IREF (PA)
VIN (VOLTS)
Figure 6.
Figure 7.
VREF
vs
Temperature (No Load)
VTT
vs
IOUT (0, 25, 85, and 125°C)
1.2346
1.25
1.245
1.2344
125oC
VTT (V)
VREF (V)
1.24
1.2342
0oC
1.235
1.234
1.23
1.2338
1.225
1.2336
0
25
50
75
100
125
-50
-25
0
25
50
75
100
IOUT (mA)
TEMPERATURE (oC)
Figure 8.
4
1.22
-100 -75
Figure 9.
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Typical Performance Characteristics (continued)
Maximum Output Current (Sourcing)
vs
VIN
(VDDQ = 2.5)
VTT
vs
IOUT
1.25
3.5
1.245
3
2.5
OUTPUT CURRENT (A)
VTT (V)
1.24
1.235
1.23
2
1.5
1
1.225
1.22
-100 -75
0.5
0
-50
-25
0
25
50
75
100
2
IOUT (mA)
2.5
3
3.5
4
4.5
5
5.5
VIN (V)
Figure 10.
Figure 11.
Maximum Output Current (Sinking)
vs
VIN
(VDDQ = 2.5)
3.5
OUTPUT CRRENT (A)
3
2.5
2
1.5
1
0.5
0
2
2.5
3
3.5
4
4.5
5
5.5
VIN (V)
Figure 12.
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Block Diagram
VDDQ
AVIN
PVIN
50k
+
+
VREF
VTT
-
50k
-
VSENSE
GND
6
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DETAILED DESCRIPTION
The LP2995 is a linear bus termination regulator designed to meet the JEDEC requirements of SSTL-2 and
SSTL-3. The LP2995 is capable of sinking and sourcing current at the output VTT, regulating the voltage to equal
VDDQ / 2. A buffered reference voltage that also tracks VDDQ / 2 is generated on the VREF pin for providing a
global reference to the DDR-SDRAM and Northbridge Chipset. VTT is designed to track the VREF voltage with a
tight tolerance over the entire current range while preventing shoot through on the output stage.
Series Stub Termination Logic (SSTL) was created to improve signal integrity of the data transmission across the
memory bus. This termination scheme is essential to prevent data error from signal reflections while transmitting
at high frequencies encountered with DDR RAM. The most common form of termination is Class II single parallel
termination. This involves using one Rs series resistor from the chipset to the memory and one Rt termination
resistor. This implementation can be seen below in Figure 13.
VDD
VTT
RT
RS
MEMORY
CHIPSET
VREF
Figure 13.
Typical values for RS and RT are 25 Ohms although these can be changed to scale the current requirements
from the LP2995. For determination of the current requirements of DDR-SDRAM termination please refer to the
accompanying application notes.
Pin Descriptions
AVIN AND PVIN
AVIN and PVIN are the input supply pins for the LP2995. AVIN is used to supply all the internal control circuitry
for the two op-amps and the output stage of VREF. PVIN is used exclusively to provide the rail voltage for the
output stage on the power operational amplifier used to create VTT. For SSTL-2 applications AVIN and PVIN pins
should be connected directly and tied to the 2.5V rail for optimal performance. This eliminates the need for
bypassing the two supply pins separately.
VDDQ
VDDQ is the input that is used to create the internal reference voltage for regulating VTT and VREF. This voltage is
generated by two internal 50kΩ resistors. This specifies that VTT and VREF will track VDDQ / 2 precisely. The
optimal implementation of VDDQ is as a remote sense for the reference input. This can be achieved by
connecting VDDQ directly to the 2.5V rail at the DIMM. This ensures that the reference voltage tracks the DDR
memory rails precisely without a large voltage drop from the power lines. For SSTL-2 applications VDDQ will be
a 2.5V signal, which will create a 1.25V reference voltage on VREF and a 1.25V termination voltage at VTT. For
SSTL-3 applications it may be desirable to have a different scaling factor for creating the internal reference
voltage besides 0.5. For instance a typical value that is commonly used is to have the reference voltage equal
VDDQ*0.45. This can be achieved by placing a resistor in series with the VDDQ pin to effectively change the
resistor divider.
VSENSE
The purpose of the sense pin is to provide improved remote load regulation. In most motherboard applications
the termination resistors will connect to VTT in a long plane. If the output voltage was regulated only at the output
of the LP2995, then the long trace will cause a significant IR drop, resulting in a termination voltage lower at one
end of the bus than the other. The VSENSE pin can be used to improve this performance, by connecting it to the
middle of the bus. This will provide a better distribution across the entire termination bus.
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NOTE
If remote load regulation is not used, then the VSENSE pin must still be connected to VTT.
VREF
VREF provides the buffered output of the internal reference voltage VDDQ / 2. This output should be used to
provide the reference voltage for the Northbridge chipset and memory. Since these inputs are typically an
extremely high impedance, there should be little current drawn from VREF. For improved performance, an output
bypass capacitor can be used, located close to the pin, to help with noise. A ceramic capacitor in the range of
0.1 µF to 0.01 µF is recommended.
VTT
VTT is the regulated output that is used to terminate the bus resistors. It is capable of sinking and sourcing
current while regulating the output precisely to VDDQ / 2. The LP2995 is designed to handle peak transient
currents of up to ± 3A with a fast transient response. The maximum continuous current is a function of VIN and
can be viewed in the Typical Performance Characteristics section. If a transient is expected to last above the
maximum continuous current rating for a significant amount of time then the output capacitor should be sized
large enough to prevent an excessive voltage drop. Despite the fact that the LP2995 is designed to handle large
transient output currents it is not capable of handling these for long durations, under all conditions. The reason
for this is the standard packages are not able to thermally dissipate the heat as a result of the internal power
loss. If large currents are required for longer durations, then care should be taken to ensure that the maximum
junction temperature is not exceeded. Proper thermal derating should always be used (please refer to the
Thermal Dissipation section).
Component Selection
INPUT CAPACITOR
The LP2995 does not require a capacitor for input stability, but it is recommended for improved performance
during large load transients to prevent the input rail from dropping. The input capacitor should be located as
close as possible to the PVIN pin. Several recommendations exist dependent on the application required. A
typical value recommended for AL electrolytic capacitors is 50 µF. Ceramic capacitors can also be used, a value
in the range of 10 µF with X5R or better would be an ideal choice. The input capacitance can be reduced if the
LP2995 is placed close to the bulk capacitance from the output of the 2.5V DC-DC converter.
OUTPUT CAPACITOR
The LP2995 has been designed to be insensitive of output capacitor size or ESR (Equivalent Series Resistance).
This allows the flexibility to use any capacitor desired. The choice for output capacitor will be determined solely
on the application and the requirements for load transient response of VTT. As a general recommendation the
output capacitor should be sized above 100 µF with a low ESR for SSTL applications with DDR-SDRAM. The
value of ESR should be determined by the maximum current spikes expected and the extent at which the output
voltage is allowed to droop. Several capacitor options are available on the market and a few of these are
highlighted below:
• AL - It should be noted that many aluminum electrolytics only specify impedance at a frequency of 120 Hz,
which indicates they have poor high frequency performance. Only aluminum electrolytics that have an
impedance specified at a higher frequency (between 20 kHz and 100 kHz) should be used for the LP2995. To
improve the ESR several AL electrolytics can be combined in parallel for an overall reduction. An important
note to be aware of is the extent at which the ESR will change over temperature. Aluminum electrolytic
capacitors can have their ESR rapidly increase at cold temperatures.
• Ceramic - Ceramic capacitors typically have a low capacitance, in the range of 10 to 100 µF range, but they
have excellent AC performance for bypassing noise because of very low ESR (typically less than 10 mΩ).
However, some dielectric types do not have good capacitance characteristics as a function of voltage and
temperature. Because of the typically low value of capacitance it is recommended to use ceramic capacitors
in parallel with another capacitor such as an aluminum electrolytic. A dielectric of X5R or better is
recommended for all ceramic capacitors.
• Hybrid - Several hybrid capacitors such as OS-CON and SP are available from several manufacturers. These
offer a large capacitance while maintaining a low ESR. These are the best solution when size and
8
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performance are critical, although their cost is typically higher than any other capacitor.
Capacitor recommendations for different application circuits can be seen in the accompanying application notes
with supporting evaluation boards.
Thermal Dissipation
Since the LP2995 is a linear regulator any current flow from VTT will result in internal power dissipation
generating heat. To prevent damaging the part from exceeding the maximum allowable junction temperature,
care should be taken to derate the part dependent on the maximum expected ambient temperature and power
dissipation. The maximum allowable internal temperature rise (TRmax) can be calculated given the maximum
ambient temperature (TAmax) of the application and the maximum allowable junction temperature (TJmax).
TRmax = TJmax − TAmax
From this equation, the maximum power dissipation (PDmax) of the part can be calculated:
PDmax = TRmax / θJA
The θJA of the LP2995 will be dependent on several variables: the package used; the thickness of copper; the
number of vias and the airflow. For instance, the θJA of the SOIC-8 is 163°C/W with the package mounted to a
standard 8x4 2-layer board with 1oz. copper, no airflow, and 0.5W dissipation at room temperature. This value
can be reduced to 151.2°C/W by changing to a 3x4 board with 2 oz. copper that is the JEDEC standard.
Figure 14 shows how the θJA varies with airflow for the two boards mentioned.
180
170
160
150
SOP Board
TJA
140
130
120
110
JEDEC Board
100
90
80
0
200
400
600
800
1000
AIRFLOW (Linear Feet per Minute)
Figure 14. θJA vs Airflow (SOIC-8)
Layout is also extremely critical to maximize the output current with the WQFN package. By simply placing vias
under the DAP the θJA can be lowered significantly. Figure 15 shows the WQFN thermal data when placed on a
4-layer JEDEC board with copper thickness of 0.5/1/1/0.5 oz. The number of vias, with a pitch of 1.27 mm, has
been increased to the maximum of 4 where a θJA of 50.41°C/W can be obtained. Via wall thickness for this
calculation is 0.036 mm for 1oz. Copper.
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100
90
TJA (qC/W)
80
70
60
50
40
0
1
2
3
4
NUMBER OF VIAS
Figure 15. WQFN-16 θJA vs # of Vias (4 Layer JEDEC Board))
Additional improvements in lowering the θJA can also be achieved with a constant airflow across the package.
Maintaining the same conditions as above and utilizing the 2x2 via array, Figure 16 shows how the θJA varies
with airflow.
51
50
qJA (oC/W)
49
48
47
46
45
0
100
200
300
400
500
600
AIRFLOW (Linear Feet Per Minute)
Figure 16. θJA vs Airflow Speed (JEDEC Board with 4 Vias)
Typical Application Circuits
The typical application circuit used for SSTL-2 termination schemes with DDR-SDRAM can be seen in Figure 17.
LP2995
VDDQ
VDDQ
VREF
VREF
VDD
AVIN
VTT
VTT
PVIN
VSENSE
+
COUT
+
CIN
GND
Figure 17. SSTL-2 Implementation
10
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For SSTL-3 and other applications it may be desirable to change internal reference voltage scaling from VDDQ *
0.5. An external resistor in series with the VDDQ pin can be used to lower the reference voltage. Internally two
50 kΩ resistors set the output VTT to be equal to VDDQ * 0.5. The addition of a 11.1 kΩ external resistor will
change the internal reference voltage causing the two outputs to track VDDQ * 0.45. An implementation of this
circuit can be seen in Figure 18.
LP2995
RVddq
VDDQ
VDDQ
VREF
VREF
VDD
AVIN
VTT
VTT
PVIN
VSENSE
+
COUT
+
CIN
GND
Figure 18. SSTL-3 Implementation
Another application that is sometimes required is to increase the VTT output voltage from the scaling factor of
VDDQ * 0.5. This can be accomplished independently of VREF by using a resistor divider network between VTT,
VSENSE and Ground. An example of this circuit can be seen in Figure 19.
LP2995
VDDQ
VDDQ
VREF
VDD
AVIN
VTT
PVIN
VSENSE
VREF
VTT
R1
COUT
+
CIN
GND
+
R2
Figure 19.
PCB Layout Considerations
1. AVIN and PVIN should be tied together for optimal performance. A local bypass capacitor should be placed
as close as possible to the PVIN pin.
2. GND should be connected to a ground plane with multiple vias for improved thermal performance.
3. VSENSE should be connected to the VTT termination bus at the point where regulation is required. For
motherboard applications an ideal location would be at the center of the termination bus.
4. VDDQ can be connected remotely to the VDDQ rail input at either the DIMM or the Chipset. This provides
the most accurate point for creating the reference voltage.
5. VREF should be bypassed with a 0.01 µF or 0.1 µF ceramic capacitor for improved performance. This
capacitor should be located as close as possible to the VREF pin.
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REVISION HISTORY
Changes from Revision L (March 2013) to Revision M
•
12
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 11
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
LP2995LQ/NOPB
Package Type Package Pins Package
Drawing
Qty
ACTIVE
WQFN
NHP
16
1000
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
Green (RoHS
& no Sb/Br)
SN
Level-3-260C-168 HR
0 to 125
L00005B
(4/5)
LP2995M
NRND
SOIC
D
8
95
TBD
Call TI
Call TI
0 to 125
2995M
LP2995M/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 125
2995M
LP2995MR
NRND
SO PowerPAD
DDA
8
95
TBD
Call TI
Call TI
0 to 125
LP2995
ACTIVE SO PowerPAD
DDA
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
0 to 125
LP2995
SO PowerPAD
DDA
8
2500
TBD
Call TI
Call TI
0 to 125
LP2995
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
0 to 125
LP2995
LP2995MR/NOPB
LP2995MRX
LP2995MRX/NOPB
NRND
LP2995MX
NRND
SOIC
D
8
2500
TBD
Call TI
Call TI
0 to 125
2995M
LP2995MX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 125
2995M
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LP2995LQ/NOPB
WQFN
NHP
16
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LP2995MRX
SO
Power
PAD
DDA
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LP2995MRX/NOPB
SO
Power
PAD
DDA
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LP2995MX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LP2995MX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LP2995LQ/NOPB
WQFN
NHP
16
1000
213.0
191.0
55.0
LP2995MRX
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
LP2995MRX/NOPB
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
LP2995MX
SOIC
D
8
2500
367.0
367.0
35.0
LP2995MX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
DDA0008A
MRA08A (Rev D)
www.ti.com
MECHANICAL DATA
NHP0016A
LQA16A (REV A)
www.ti.com
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