AON7422E 30V N-Channel MOSFET General Description Product Summary The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS 30V 40A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.3mΩ RDS(ON) (at VGS=4.5V) < 6.0mΩ ESD protected 100% UIS Tested 100% Rg Tested D DFN 3x3 EP Bottom View Top View Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: Feb. 2011 IAS, IAR 45 A EAS, EAR 101 mJ 36 Steady-State Steady-State W 14 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 16 PDSM TA=70°C A 20 PD TC=100°C V 200 IDSM TA=70°C ±20 31 IDM TA=25°C Continuous Drain Current Units V 40 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 2.8 °C Max 40 75 3.4 Units °C/W °C/W °C/W Page 1 of 6 AON7422E Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V Min Typ 30 36 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 On state drain current VGS=10V, VDS=5V 200 TJ=55°C VDS=0V, VGS=±16V uA 1.85 2.4 V 3.5 4.3 5.5 6.8 VGS=4.5V, ID=16A 4.5 6 VDS=5V, ID=20A 85 Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 10 RDS(ON) Output Capacitance V 5 VGS=10V, ID=20A Coss Units 1 IDSS IS Max VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A 0.7 mΩ mΩ S 1 V 40 A 1950 2445 2940 pF 270 390 510 pF 130 220 310 pF 1.2 2.4 3.6 Ω 32 41 50 nC 19 24 nC 15 7.2 nC 6.6 nC 7 ns 5 ns 41.5 ns 10.5 IF=20A, dI/dt=500A/µs ns 17.5 22 31 40 ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Feb. 2011 www.aosmd.com Page 2 of 6 AON7422E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V 80 VDS=5V 3.5V 4V 60 4.5V ID(A) ID (A) 60 3V 40 40 125°C 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 1 6 3 4 5 6 Normalized On-Resistance 2 5 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 4 3 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 10 VGS=4.5V 1.4 1.2 1 ID=16A 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 12 ID=20A 1.0E+01 10 125°C IS (A) RDS(ON) (mΩ) 40 1.0E+00 8 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 2 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Feb. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7422E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3600 VDS=15V ID=20A 3200 2800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2400 2000 1600 1200 Coss 800 2 400 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 10µs RDS(ON) limited 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 0.1 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 160 10µs Power (W) 100.0 10 5 200 1000.0 ID (Amps) Crss 0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.4°C/W 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Feb. 2011 www.aosmd.com Page 4 of 6 AON7422E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 10 TA=125°C 1 40 30 20 10 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 17 5 2 10 Power (W) Current rating ID(A) 150 30 100 20 10 10 0 0 ZθJA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 1 0.00001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0 Pulse 0.001 0.1 Width (s)10 18 1000 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Feb. 2011 www.aosmd.com Page 5 of 6 AON7422E Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Feb. 2011 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6