SUTEX HV430WG-G High-voltage ring generator Datasheet

Supertex inc.
HV430
High-Voltage Ring Generator
Features
►
►
►
►
►
►
►
The RESET input functions as a power-on reset when
connected to an external capacitor. The FAULT output
indicates an overcurrent condition and is cleared after 4
consecutive cycles with no overcurrent condition. A logic low
on RESET or ENABLE clears the FAULT output. It is activelow and open-drain to allow wire OR’ing of multiple drivers.
105Vrms ring signal
Output overcurrent protection
5.0V CMOS logic control
Logic enable/disable to save power
Adjustable deadband in single-control mode
Power-on reset
Fault output for problem detection
PGATE and NGATE are controlled independently by logic inputs
PIN and NIN when the MODE pin is at logic high. A logic high on
PIN will turn on the external P-channel MOSFET. Similarly, a
logic high on NIN will turn on the external N-channel MOSFET.
Lockout circuitry prevents the N and P switches from turning
on simultaneously. A pulse width limiter restricts pulse widths
to no less than 100 - 200ns.
Applications
► Line access cards
► Set-top/Street box
For applications where a single control input is desired, the
MODE pin should be connected to SGND. The PWM control
signal is then input to the NIN pin. A user-adjustable deadband
in the control logic ensures break-before-make on the outputs,
thus avoiding cross conduction on the high voltage output
during switching. A logic high on NIN will turn the external PChannel MOSFET on and the N-Channel off, and vice versa.
The IC can be powered down by applying a logic low on the
ENABLE pin, placing both external MOSFETs in the off state.
General Description
The Supertex HV430 is a high voltage PWM ring generator
integrated circuit. The high voltage outputs, VPGATE and
VNGATE, are used to drive the gates of external high voltage
N-channel and P-channel MOSFETs in a push-pull
configuration. Overcurrent protection is implemented for
both the P-channel and N-channel MOSFETs. External
sense resistors set the over-current trip point.
Functional Block Diagram
VDD
VPP1
+5.0V
VPP2
FAULT
De-glitcher
VPP1
VPP2
Regulator
VDD
clk reset
RSENSE
PIN
MODE
DEADBAND
Control
Logic
NIN
ENABLE
VDD
10µA
RESET
SIG
GND
VPSEN
Down
Translator
Current
Trip
Up
Translator
P
Driver
VPGATE
Up
Translator
N
Driver
VNGATE
Down
Translator
Current
Trip
PWR
GND
Ringer
Output
VNSEN
RSENSE
VNN2
Regulator
VNN1
VNN2
VNN1
Doc.# DSFP-HV430
A031414
Supertex inc.
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HV430
Pin Configuration
Ordering Information
Part Number
Package Option Packing
HV430WG-G
20-Lead SOW
20
1
1000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package
Absolute Maximum Ratings
Parameter
Value
VPP1 - VNN1, power supply voltage
+340V
VPP1, positive high voltage supply
+220V
VPP2, positive gate voltage supply
+220V
VNN1, negative high voltage supply
-220V
VNN2, negative gate voltage supply
-220V
VDD, logic supply
(top view)
Product Marking
YY = Year Sealed
WW = Week Sealed
HV430WG
LLLLLLLLLL
A = Assembler ID
L = Lot Number
Bottom Marking
C = Country of Origin*
= “Green” Packaging
CCCCCCCCCCC
Top Marking
YYWW AAA
+7.5V
Operating temperature range
Storage temperature range
20-Lead SOW
-40 C to +85OC
O
-65 C to +150 C
Power dissipation
O
O
*May be part of top marking
Package may or may not include the following marks: Si or
20-Lead SOW
600mW
Stresses beyond those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions
beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Typical Thermal Resistance
Package
θja
20-Lead SOW
66OC/W
Electrical Characteristics (Over operating supply voltage unless otherwise specified. T = -40°C to +85°C)
A
Sym
Parameter
Min
Typ
Max
Units
Conditions
50
-
200
V
---
External Supplies
VPP1
High voltage positive supply
IPP1Q
VPP1 quiescent current
-
250
500
µA
PIN = NIN = 0V
IPP1
VPP1 operating current
-
-
2.0
mA
No load, VOUTP and VOUTN
switching at 100KHz
VNN1
High voltage negative supply
VPP1 -325
-
-50
V
---
INN1Q
VNN1 quiescent current
-
250
500
µA
PIN = NIN = 0V, RDB = 18kΩ
INN1
VNN1 operating current
-
-
1.0
mA
No load, VOUTP and VOUTN
switching at 100KHz
VDD
Logic supply voltage
4.50
-
5.50
V
---
IDDQ
VDD quiescent current
-
300
400
µA
PIN = NIN = 0V, RDB = 18kΩ
IDD
VDD operating current
-
-
1.0
mA
PIN = NIN = 100KHz,
RDB = 18kΩ
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HV430
Electrical Characteristics (cont.)(Over operating supply voltage unless otherwise specified. T = -40°C to +85°C)
A
Sym
Parameter
Min
Typ
Max
Units
Conditions
VPP1 -16
-
VPP1 -10
V
---
VPP1 +10
-
VPP1 +14
V
---
VPP2
-
VPP1
V
No load on VPGATE
VPGATE source resistance
-
-
12.5
Ω
IOUT = 80mA
RSINKP
VPGATE sink resistance
-
-
12.5
Ω
IOUT = -80mA
tRISEP
VPGATE rise time
-
-
50
ns
CLOAD = 1.4nF
tFALLP
VPGATE fall time
-
-
50
ns
CLOAD = 1.4nF
100
150
200
ns
---
-
-
300
ns
Mode = 1
Internal Supplies
VPP2
VNN2
Positive linear regulator output
voltage
Negative linear regulator output
voltage
Positive High Voltage Output
VPGATE
RSOURCEP
Output voltage swing
tPWP(MIN)
VPGATE minimum pulse width
(internally limited)
tDELAYP
PIN to PGATE delay time
VPSEN
VPGATE current sense voltage
VPP1 -0.85
VPP1 -1.0
VPP1 -1.15
V
---
tSHORTP
VPGATE current sense off time
-
-
150
ns
---
VNN2
-
VNN1
V
No load on VNGATE
VNGATE source resistance
-
-
15.0
Ω
IOUT = 80mA
RSINKN
VNGATE sink resistance
-
-
15.0
Ω
IOUT = 80mA
tRISEN
VNGATE rise time
-
-
50
ns
CLOAD = 1.4nF
tFALLN
VNGATE fall time
-
-
50
ns
CLOAD = 1.4nF
100
150
200
ns
---
-
-
300
ns
Mode = 1
Negative High Voltage Output
VNGATE
RSOURCEN
Output voltage swing
tPWN(MIN)
VNGATE minimum pulse width
(internally limited)
tDELAYN
NIN to NGATE delay time
VNSEN
VNGATE current sense voltage
VNN1 +0.85
VNN1 +1.0
VNN1 +1.15
V
---
tSHORTN
VNGATE current sense off time
-
-
150
ns
---
Control Circuitry
VIL
Logic input low voltage
0
-
0.60
V
VDD = 5.0V
VIH
Logic input high voltage
2.7
-
5.0
V
VDD = 5.0V
IINDN
Input pull-down current
0.5
1.0
5.0
µA
PIN, NIN, ENABLE
RUP
Input pull-up resistance
100
200
300
KΩ
MODE
VOL
Logic output low voltage
-
-
0.50
V
VDD = 5.0V, IOUT = -0.5mA
VOH
Logic output high voltage
4.50
-
-
V
VDD = 5.0V, IOUT = +0.5mA
VRST(OFF)
RESET voltage, device off
3.2
-
3.5
V
VDD = 5.0V
VRST(ON)
RESET voltage, device on
3.7
-
4.0
V
VDD = 5.0V
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HV430
Electrical Characteristics (cont.)(over operating supply voltage unless otherwise specified. T = -40°C to +85°C)
A
Sym
Parameter
Min
Typ
Max
Units
RESET hysteresis voltage
0.3
-
-
V
VDD = 5.0V
IRESET
RESET pull-up current
7.0
10
13
µA
VRESET = 0 - 4.5V
tRST(ON)
RESET on delay
-
-
1.0
µs
---
tRST(ON)
RESET off delay
-
-
1.0
µs
---
tEN(ON)
ENABLE on delay
50
100
150
µs
---
tEN(OFF)
ENABLE off delay
-
-
1.0
µs
---
tFLT(HOLD)
FAULT hold time
-
4
-
NIN/PIN
cycles
tDB
Deadband time
35
50
70
105
140
175
VRST(HYS)
ns
Conditions
ENABLE = 1
Mode = 0, RDB = 5.6kΩ
Mode = 0, RDB = 18kΩ
tDELAY(N-P)
N-off to P-on transistion delay
-
-
300
ns
Mode = 0, RDB < 27kΩ
tDELAY(P-N)
P-off to N-on transistion delay
-
-
300
ns
Mode = 0, RDB < 27kΩ
∆tDELAY(N-P)
Delay difference: tdelayN(off) - tdelayP(on)
-80
0
80
ns
Mode = 1
∆tDELAY(P-N)
Delay difference: tdelayP(off) - tdelayN(on)
-80
0
80
ns
Mode = 1
Truth Table
Logic Inputs*
Output
RESET
Externel N-Channel
MOSFET
Externel P-Channel
MOSFET
H
>VRESET(ON)
OFF
OFF
H
H
>VRESET(ON)
OFF
ON
L
H
H
>VRESET(ON)
ON
OFF
H
H
H
H
>VRESET(ON)
OFF
OFF
H
X
L
H
>VRESET(ON)
OFF
ON
L
X
L
H
>VRESET(ON)
ON
OFF
X
X
X
L
X
OFF
OFF
X
X
X
X
<VRESET(OFF)
OFF
OFF
NIN
PIN
Mode
EN
L
L
H
L
H
H
Note:
* Unused logic inputs should be connected to VDD or GND.
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HV430
Single-Control Mode Timing
VDD
1
NIN
0
GND
tN-P DELAY
tP-N DELAY
VPP2
ON
POUT
OFF
tP RISE
VPP1
tP FALL
tP-N DEADBAND
tN-P DEADBAND
VNN2
ON
NOUT
OFF
tN FALL
VNN1
tN RISE
Dual-Control Mode Timing
VDD
1
PIN
0
tP DELAY(ON)
tP PULSE(MIN)
GND
tP DELAY(OFF)
ON
VPP2
POUT
OFF
tP RISE
VPP1
tP FALL
VDD
1
NIN
0
tN DELAY(ON)
tN PULSE(MIN)
tN DELAY(OFF)
GND
VNN2
ON
NOUT
OFF
Doc.# DSFP-HV430
A031414
tN RISE
5
tN FALL
VNN1
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HV430
ENABLE Timing
1
VDD
0
GND
1
VDD
NIN/PIN
Switching
0
POUT
NOUT
GND
tEN(ON)
tEN(OFF)
VPP2
ON
Off
Switching
Off
OFF
VPP1
ON
VNN2
Off
Switching
Off
VNN1
OFF
RESET Timing
VRESET(ON)
VRESET(OFF)
RESET
GND
VDD
1
NIN/PIN
Switching
0
tRST(OFF)
tRST(ON)
VPP2
ON
POUT
Off
Switching
Off
OFF
VPP1
VNN2
ON
NOUT
Doc.# DSFP-HV430
A031414
GND
Off
Switching
Off
VNN1
OFF
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HV430
FAULT Timing
ENABLE
or
RESET
1
VDD
0
GND
1
VDD
0
GND
NIN
ON
VPP2
OFF
VPP1
ON
VNN2
OFF
VNN1
POUT
NOUT
Over
NSENSE
OK
tFAULT(HOLD)
ENABLE or RESET
clears fault immediately.
VDD
FAULT
w/ext pull-up
GND
Note:
NSENSE overcurrent shown. PSENSE operates identically.
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HV430
Pin Description
Pin #
Name
1
VDD
2
FAULT
Logic output. Fault is at logic low when either current limit sense pin, VPSEN or VNSEN, is activated. Remains active until overcurrent condition clears or ENABLE = 0 or RESET = 0.
3
MODE
Logic mode input. 0 = single-control; 1 = dual-control. When MODE is high, NIN and PIN independently control NOUT and POUT, respectively. When MODE is low, NIN controls both outputs in a
complementary manner. (See Truth Table)
4
PIN
Logic control input. When mode is high, logic input high turns on the external high voltage P-channel MOSFET. Internally pulled low.
5
NIN
Logic control input. When mode is high, logic input high turns on the external high voltage N-channel MOSFET. Internally pulled low.
6
ENABLE
7
RESET
Power-on reset. A capacitor connected between this pin and ground determines the delay time
between application of VDD and when the device outputs are enabled. Low leakage tantalum
recommended.
8
DEADBAND
A resistor between this pin and ground sets the ‘break-before-make’ time between output transitions. Applicable only in single-control mode. For minimum deadtime, a 5.6kΩ resistor to ground
should be used. For dual-input mode, tie to VDD.
9
SGND
Low voltage logic ground.
10
PGND
High voltage logic ground.
11
VNN2
Negative gate voltage supply. Generated by an internal linear regulator. A 25V, 100nF capacitor
should beconnected between VNN2 and VNN1.
12
VNN1
Negative high voltage supply.
13
VNSEN
Pulse by pulse over current sensing for N-Channel MOSFET.
14
VNGATE
Gate drive for external N-channel MOSFET.
15
N/C
16
Description
Logic supply voltage.
Logic enable input. Logic high enables IC. Internally pulled low.
No connect.
17
VPGATE
Gate drive for external P-channel MOSFET.
18
VPSEN
Pulse by pulse over current sensing for P-Channel MOSFET.
19
VPP1
Positive high voltage supply.
20
VPP2
Positive gate voltage supply. Generated by an internal linear regulator. A 25V, 100nF capacitor
should beconnected between VPP2 and VPP1.
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HV430
20-Lead SOW (Wide Body) Package Outline (WG)
12.80x7.50mm body, 2.65mm height (max), 1.27mm pitch
D
20
θ1
Note 1
(Index Area
0.25D x 0.75E1)
L2
L
L1
e
1
E1 E
b
Top View
Gauge
Plane
Seating
Plane
θ
View B
View B
Note 1
A
h
h
A A2
Seating
Plane
A1
Side View
View A-A
A
Note:
1. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or
a printed indicator.
Symbol
MIN
Dimension
NOM
(mm)
MAX
A
A1
A2
b
D
E
E1
2.15*
0.10
2.05
0.31
12.60*
9.97*
7.40*
-
-
-
-
12.80
10.30
7.50
2.65
0.30
2.55*
0.51
13.00* 10.63*
7.60*
e
1.27
BSC
h
L
0.25
0.40
-
-
0.75
1.27
L1
L2
1.40 0.25
REF BSC
θ
θ1
0O
5O
-
-
8O
15O
JEDEC Registration MS-013, Variation AC, Issue E, Sep. 2005.
* This dimension is not specified in the JEDEC drawing.
Drawings are not to scale.
Supertex Doc. #: DSPD-20SOWWG, Version D041309.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2014 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
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